Features
•
Supply Voltage 5 V (Typically)
•
Very Low Power Consumption: 150 mW (Typically) for -1 dBm Output Level
•
Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO
•
•
•
•
•
•
Input Signal
Phase Control Loop for Precise 90° Phase Shifting
Power-down Mode
Low LO Input Level: -10 dBm (Typically)
50-W Single-ended LO and RF Port
LO Frequency from 100 MHz to 1 GHz
SO16 Package01/03
Benefits
•
No External Components Required for Phase Shifting
•
Adjustment Free, Hence Saves Manufacturing Time
•
Only Three External Components Necessary, this Results in Cost and Board Space
Saving
1000-MHz
Quadrature
Modulator
U2790B
Electrostatic sensitive device.
Observe precautions for handling.
Description
The U2790B is a 1000-MHz quadrature modulator using Atmel´s advanced UHF pro-
cess. It features a frequency range from 100 MHz up to 1000 MHz, low current
consumption, and single-ended RF and LO ports. Adjustment-free application makes
the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM,
ADC, JDC.
Figure 1.
Block Diagram
S
PU
BB
AI
BB
AI
8
7
6
Power
up
PU
1
V
S
5,4
LO
i
Ph
adj
BB
Bi
BB
BI
12
15
16
9
10
Duty cycle
regenerator
Frequency
doubler
0°
90°
90°/control
loop
S
RF
O
3
2,11,13,14
GND
Rev. 4583A–CELL–01/03
1
Pin Configuration
Figure 2.
Pinning SO16
PU
GND
RF
O
V
S
V
S
S
PD
BB
Ai
BB
Ai
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Ph
adj
Ph
adj
GND
GND
LO
i
GND
BB
Bi
BB
Bi
Pin Description
Pin
1
2, 11, 13, 14
3
4, 5
6
7
8
9
10
12
15, 16
Symbol
PU
GND
RF
o
V
S
S
PU
BB
Ai
BB
Ai
BB
Bi
BB
Bi
LO
i
Ph
adj
Function
Power-up input
Ground
RF output
Supply voltage
Settling time power-up
Baseband input A
Baseband input A inverse
Baseband input B
Baseband input B inverse
LO input
Phase adjustment (not necessary for regular applications)
2
U2790B
4583A–CELL–01/03
U2790B
Absolute Maximum Ratings
Parameters
Supply voltage
Input voltage
Junction temperature
Storage temperature range
Symbol
V
S
V
i
T
j
T
Stg
Value
6
0 to V
S
125
-40 to +125
Unit
V
V
°C
°C
Operating Range
Parameters
Supply voltage range
Ambient temperature range
Symbol
V
S
T
amb
Value
4.5 to 5.5
-40 to +85
Unit
V
°C
Thermal Resistance
Parameters
Junction ambient SO16
Symbol
R
thJA
Value
110
Unit
K/W
Electrical Characteristics
Test conditions (unless otherwise specified): V
S
= 5 V, T
amb
= 25°C, referred to test circuit, system impedance Z
O
= 50
W,
f
LO
= 900 MHz, P
LO
= -10 dBm, V
BBi
= 1 V
pp
differential.
No.
Parameters
Supply voltage range
Supply current
Baseband Inputs
Input-voltage range
(differential)
Input impedance
(single ended)
Input-frequency
range
(5)
Internal bias voltage
Temperature
coefficient
LO Input
Frequency range
Input level
(1)
Input impedance
Test Conditions
Pin
4, 5
4, 5
7–8,
9–10
Symbol
V
S
I
S
Min.
4.5
24
Typ.
30
Max.
5.5
37
Unit
V
mA
Type*
A
A
1.1
1.2
2
2.1
2.2
2.3
2.4
2.5
3
3.1
3.2
3.3
V
BBi
Z
BBi
f
BBi
V
BBb
TC
BB
0
2.35
1000
3.2
1500
mV
pp
kW
D
D
D
A
D
250
2.5
0.1
2.65
<1
MHz
V
mV/°C
12
f
LOi
P
LOi
Z
iLO
50
- 12
- 10
50
1000
-5
MHz
dBm
W
D
D
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The required LO level is a function of the LO frequency.
2. In reference to an RF output level
£
-1 dBm and I/Q input level of 400 mV
pp
differential.
3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be
connected at these pins.
4. For T
amb
= -30°C to +85°C and V
S
= 4.5 to 5.5 V.
5. By low impedance signal source.
3
4583A–CELL–01/03
Electrical Characteristics (Continued)
Test conditions (unless otherwise specified): V
S
= 5 V, T
amb
= 25°C, referred to test circuit, system impedance Z
O
= 50
W,
f
LO
= 900 MHz, P
LO
= -10 dBm, V
BBi
= 1 V
pp
differential.
No.
Parameters
Voltage standing
wave ratio
Duty cycle range
RF Output
Output level
LO suppression
(2)
Sideband
suppression
(2, 3)
Phase error
(4)
Amplitude error
Noise floor
VSWR
3rd-order baseband
harmonic
suppression
RF harmonic
suppression
Power-up Mode
Supply current
Test Conditions
Pin
Symbol
VSWR
LO
DCR
LO
Min.
Typ.
1.4
Max.
2
0.6
Unit
Type*
D
D
3.4
3.5
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
0.4
-5
30
32
35
30
-1
35
35
40
35
<1
< +0.25
-132
-144
1.6
35
45
3
f
LO
= 900 MHz
f
LO
= 150 MHz
f
LO
= 900 MHz
f
LO
= 150 MHz
P
RFo
LO
RFo
SBS
RFo
P
e
A
e
+2
dBm
dB
dB
deg.
dB
dBm/Hz
B
B
B
D
D
D
D
V
BBi
= 2 V, V
BBi
= 3 V
V
BBi
= V
BBi
= 2.5 V
N
FL
VSWR
RF
S
BBH
S
RFH
2
dB
D
4.9
5
5.1
35
dB
D
V
PU
£
0.5 V,
V
PU
= 1 V
C
SPU
= 100 pF,
C
LO
= 100 pF
C
RFo
= 1 nF
4, 5
I
PU
t
sPU
10
10
1
µA
D
5.2
6
6.1
6.2
Settling time
Switching Voltage
Power-on
Power-up
6 to 3
µs
D
1
1
V
PUon
V
PUdown
4
1
V
V
D
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The required LO level is a function of the LO frequency.
2. In reference to an RF output level
£
-1 dBm and I/Q input level of 400 mV
pp
differential.
3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be
connected at these pins.
4. For T
amb
= -30°C to +85°C and V
S
= 4.5 to 5.5 V.
5. By low impedance signal source.
4
U2790B
4583A–CELL–01/03
U2790B
Diagrams
Figure 3.
Typical Single Sideband Output Spectrum at V
S
= 4.5 V and V
S
= 5.5 V,
f
LO
= 900 MHz, P
LO
= -10 dBm, V
BBI
= 1 V
PP
(differential) T
amb
= 25°C
Figure 4.
Typical GMSK Output Spectrum
5
4583A–CELL–01/03
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
