BT151X series
Thyristors
Rev. 04 — 9 June 2004
Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT186A full pack plastic package.
1.2 Features
s
High thermal cycling performance
s
High bidirectional blocking voltage
capability
s
Isolated mounting base.
1.3 Applications
s
Motor control
s
Industrial and domestic lighting, heating
and static switching.
1.4 Quick reference data
s
V
DRM
, V
RRM
≤
800 V (BT151X-800)
s
V
DRM
, V
RRM
≤
650 V (BT151X-650)
s
V
DRM
, V
RRM
≤
500 V (BT151X-500)
s
I
T(RMS)
≤
12 A
s
I
T(AV)
≤
7.5 A
s
I
TSM
≤
120 A.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Discrete pinning
Description
cathode (k)
anode (a)
gate (g)
mounting base; isolated
mb
sym037
Simplified outline
Symbol
1 2 3
SOT186A (TO-220)
Philips Semiconductors
BT151X series
Thyristors
3. Ordering information
Table 2:
Ordering information
Package
Name
BT151X-500
BT151X-650
BT151X-800
-
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220 ‘full pack’
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
, V
RRM
Parameter
repetitive peak off-state voltage
BT151X-500
BT151X-650
BT151X-800
I
T(AV)
I
T(RMS)
I
TSM
average on-state current
RMS on-state current
half sinewave;
T
hs
≤
69
°C;
Figure 1
all conduction angles;
Figure 4
and
Figure 5
[1]
[1]
Conditions
Min
-
-
-
-
-
Max
500
650
800
7.5
12
Unit
V
V
V
A
A
non-repetitive peak on-state current half sinewave;
T
j
= 25
°C
prior to
surge;
Figure 2
and
Figure 3
t = 10 ms
t = 8.3 ms
-
-
-
-
-
-
-
over any 20 ms period
-
−40
-
120
132
72
50
2
5
5
0.5
+150
125
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
[1]
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt 50 mA/µs
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
9397 750 13162
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 9 June 2004
2 of 11
Philips Semiconductors
BT151X series
Thyristors
15
P
tot
(W)
2.2
10
2.8
4
conduction
angle
(degrees)
30
60
90
120
180
0
0
2
4
6
I
T(AV)
(A)
form
factor
a
4
2.8
2.2
1.9
1.57
001aaa961
57.5
T
hs(max)
(°C)
80
a=
1.57
1.9
5
102.5
α
125
8
a = form factor = I
T(RMS)
/I
T(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
160
I
TSM
(A)
001aaa957
I
T
I
TSM
120
t
t
p
T
j
initial = 25
°C
max
80
40
0
1
10
10
2
n
10
3
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
9397 750 13162
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 9 June 2004
3 of 11
Philips Semiconductors
BT151X series
Thyristors
10
3
001aaa956
I
TSM
(A)
dl
T
/dt limit
10
2
I
T
I
TSM
t
t
p
T
j
initial = 25
°C
max
10
10
−5
10
−4
10
−3
t
p
(s)
10
−2
t
p
≤
10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
001aaa955
25
I
T(RMS)
(A)
20
16
I
T(RMS)
(A)
12
001aaa960
15
8
10
4
5
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
hs
(°C)
150
f = 50 Hz; T
hs
≤
87
°C.
Fig 4. RMS on-state current as a function of surge
duration; maximum values.
Fig 5. RMS on-state current as a function of heatsink
temperature; maximum values.
9397 750 13162
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 9 June 2004
4 of 11
Philips Semiconductors
BT151X series
Thyristors
5. Thermal characteristics
Table 4:
Symbol
R
th(j-hs)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
Conditions
Figure 6
with heatsink compound
without heatsink compound
R
th(j-a)
thermal resistance from
junction to ambient
in free air
-
-
55
4.5
6.5
-
K/W
K/W
K/W
Typ
Max
Unit
10
Z
th(j-hs)
(K/W)
1
(1)
(2)
001aaa964
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Without heatsink compound.
(2) With heatsink compound.
Fig 6. Transient thermal impedance as a function of pulse width.
6. Isolation characteristics
Table 5:
Isolation limiting values and characteristics
T
hs
= 25
°
C unless otherwise specified
Symbol
V
isol
Parameter
Conditions
Typ
-
Max
2500
Unit
V
RMS isolation voltage from all f = 50 to 60 Hz; sinusoidal
three terminals to external
waveform; R.H.
≤
65%; clean and
heatsink
dust free
capacitance from pin 2 to
external heatsink
f = 1 MHz
C
isol
10
-
pF
9397 750 13162
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 9 June 2004
5 of 11
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