Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT148S-600Z
BT148M-600Z
Glass passivated, sensitive gate thyristor in
a plastic envelope, suitable for surface
mounting, intended for use in general
purpose switching and phase control
applications. These devices feature a
gate-cathode reverse breakdown voltage
specification. They can be interfaced
directly to microcontrollers, logic integrated
circuits and other low power gate trigger
circuits.
MAX.
600Z
600
2.5
4
35
UNIT
V
A
A
A
BT148S
(or BT148M)-
Repetitive peak off-state
voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
PINNING - SOT428
PIN
Standard Alternative
NUMBER
S
M
1
2
3
tab
cathode
anode
gate
anode
gate
anode
cathode
anode
PIN CONFIGURATION
tab
SYMBOL
a
k
2
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
PARAMETER
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
half sine wave; T
mb
≤
111 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to surge
t = 10 ms
t = 8.3 ms
I
2
t for fusing
t = 10 ms
Repetitive rate of rise of on-state I
TM
= 10 A; I
G
= 50 mA;
current after triggering
dI
G
/dt = 50 mA/µs
Peak gate current
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
600
1
2.5
4
35
38
6.1
50
2
5
0.5
150
125
2
UNIT
V
A
A
A
A
A
2
s
A/µs
A
W
W
˚C
˚C
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2
Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
BT148S-600Z
BT148M-600Z
TYP.
-
75
MAX.
3.0
-
UNIT
K/W
K/W
Thermal resistance
junction to mounting base
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GR
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate-cathode reverse
breakdown voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
I
G
= -20
µA
I
G
= -150
µA
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 ˚C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C
MIN.
-
-
-
-
14
-
-
0.1
-
TYP.
15
0.17
0.10
1.23
-
-
0.4
0.2
0.1
MAX.
200
10
6
1.8
-
20
1.5
-
0.5
UNIT
µA
mA
mA
V
V
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
t
q
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; R
GK
= 100
Ω
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
dI
G
/dt = 0.2 A/µs
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C; I
TM
= 8 A;
V
R
= 10 V; dI
TM
/dt = 10 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
MIN.
-
-
-
TYP.
50
2
100
MAX.
-
-
-
UNIT
V/µs
µs
µs
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT148S-600Z
BT148M-600Z
6
5
4
3
2
1
0
Ptot / W
conduction form
angle
factor
degrees
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
BT148
Tmb(max) / C
ITSM / A
107
110
40
IT
I TSM
T
time
1.9
2.2
2.8
4
a = 1.57
113
116
119
30
Tj initial = 25 C max
20
10
122
125
3
0
0.5
1
1.5
IF(AV) / A
2
2.5
0
1
10
100
Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
BT148
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000 ITSM / A
12
10
8
IT(RMS) / A
BT150
dI
T
/dt limit
100
ITSM
6
4
2
0
0.01
IT
time
T
Tj initial = 25 C max
10
10us
100us
T/s
1ms
10ms
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
111˚C.
VGT(Tj)
VGT(25 C)
5
IT(RMS) / A
BT148Z
1.6
111 C
BT151
4
1.4
1.2
1
3
2
0.8
1
0.6
0
-50
0
50
Tmb / C
100
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT148S-600Z
BT148M-600Z
3
2.5
2
1.5
1
0.5
IGT(Tj)
IGT(25 C)
BT148
12
10
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.26 V
Rs = 0.099 ohms
BT148
typ
max
8
6
4
2
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
BT145
10
Zth j-mb (K/W)
BT148
1
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
0.1
P
D
tp
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25 C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dVD/dt (V/us)
3
2.5
2
1.5
1
0.5
BT145
1000
RGK = 100 ohms
100
10
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
6.73 max
1.1
2.38 max
0.93 max
seating plane
BT148S-600Z
BT148M-600Z
5.4
tab
4 min
6.22 max
10.4 max
4.6
2
1
2.285 (x2)
0.5 min
0.5
0.3
0.5
3
0.8 max
(x2)
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
