SM6610 series
NIPPON PRECISION CIRCUITS INC.
CMOS Monolithic Temperature Sensor IC
OVERVIEW
SM6610 series is high-accuracy temperature sensor IC in the ultra small package.
By using CMOS circuit, it realizes low voltage and low current consumption.
The power down function contributes to decrease the current consumption of application set by activating
intermittent function easily.
FEATURES
s
s
s
s
s
PINOUT
(Top view)
VSP-4
VDD
lim
1
4
OUT
2
3
PDN
P ackag e
SC82AB
VSP-4
Output center current
[V] (Ta = 25°C)
1.933
SC82AB
VSP-4
1.449
ina
s
s
High linearity:
±
0.5% typ. (Ta = –20 to 80°C)
Operating temperature range: –40 to 100°C (V
DD
≥
2.7V)
Maximum output current load:
±
250µA
Output reference: VSS
Low current consumption: 5.5µA typ. (Ta = 25°C)
s
s
s
Low stand-by current: 0.5µA max.
Very small plastic package: SC82AB
Very small leadless package: VSP-4
Power down function
Molybdenum-gate CMOS Process
SC82AB
VSS
ORDERING INFORMATION
D e vice
pre
SM6610AH
SM6610AD
SM6610BH
SM6610BD
Temperature
coefficient [mV/°C]
– 10.7
– 8.2
ry
VDD 1
4 OUT
VSS 2
3 PDN
Operating voltag e
[V]
4.0 to 6.0
± 5.0
2.4 to 6.0
± 5.0
A c c u r a cy
[°C]
NIPPON PRECISION CIRCUITS—1
SM6610 series
PACKAGE DIMENSIONS
(Unit : mm)
VSP-4
1.25
±
0.1
0.05
lim
+ 0.2
2.0
−
0.1
0.3
0.3
+ 0.2
1.25
−
0.1
2.1
±
0.3
0.3
0.4
1.3
±
0.2
0.15
0 to 0.1
0.1
+ 0.1
0.4
−
0.05
+ 0.1
0.3
−
0.05
0.9
±
0.1
0.10 M
SC82AB
pre
NIPPON PRECISION CIRCUITS—2
0.3
ina
ry
0.60
±
0.1
C0.15
0.05
0.8
0.05
2.0
±
0.1
0.02
±
0.005
0.33
±
0.05
+0.07
0.93
−0.1
+ 0.1
0.125
−
0.05
1.30
SM6610 series
BLOCK DIAGRAM
VDD
Constant
current
source
Temperature sensor
VSS
Number
1
2
3
4
1. Connect PDN to VDD when the pow er down function is not used.
pre
NIPPON PRECISION CIRCUITS—3
lim
Name
VDD
VSS
Description
Positive pow er supply
Ground
PDN
1
OUT
Sensor output
PIN DESCRIPTION
Pow er down control. Pow er down when LOW .
ina
ry
−
Amplifier
OUT
+
PDN
SM6610 series
SPECIFICATIONS
DC Characteristics
V
DD
= 5.0 V, V
SS
= 0 V, Ta = –40 to 100
°C
unless otherwise noted.
Rating
P arameter
Current consumption
Symbol
I
D D
No load
Condition
min
–
typ
5.5
max
10.0
µA
V
V
V
V
V
V
Unit
Ta
= −
30
°C
Ta
= +
25
°C
Output voltage
1
V
OUT
Ta
= +
100
°C
Ta
= −
30
°C
Ta
= +
25
°C
Ta
= +
100
°C
Te m p e rature coefficient
1, 2
Linearity
3
M a x i m um capacitive load
M a x i m um output current load
Star t up time
PDN Input voltage
T
C
N
L
C
L
I
L
t
D
V
IH
V
IL
Ta
= −
30 to
+
100
°C
Ta
= −
20 to
+
80
°C
ina
ry
2.468
2.521
2.574
A
×
version
1.880
1.933
1.986
1.077
1.130
1.183
1.859
1.900
1.941
B
×
version
1.408
1.449
1.490
0.793
–
–
0.834
0.875
–
A
×
version
B
×
version
−
10.7
−
8.2
±
0.5
–
–
–
–
–
100
–
–
–
–
±
50
±
250
300
–
V
S S
+
0.3
–
–
V
D D
−
0.3
–
–
–
V (−20 C)
a
Measured value
a
V (80 C)
Ta
0C
80 C
m V /
°C
m V /
°C
%
pF
µA
µA
µs
V
V
V
D D
=
2.4V
V
D D
=
4.5V
1. Provisional value
2. Te m p e rature coefficient: T
C
=
(V
O U T
(@100°C)
−
V
O U T
(@− 30°C))/130
3. Linearity: N
L
= (a/b)
×
100
a: Maximum deviation between measured and approximate value in the range of – 20
°C
to + 80°C .
b: Measured value difference between the values at – 20
°C
and + 80°C .
pre
b
−20
C
lim
VTEMP(V)
a
Approximate value
NIPPON PRECISION CIRCUITS—4
SM6610 series
TYPCAL PERFORMANCE CHARACTERISTICS (Reference value)
SM6610A×
SM6610B×
3.00
2.50
V
OUT
[V]
2.00
1.50
1.00
0.50
0.00
-60
-40
-20
0
20
40
Ta [°C]
60
80
3.00
ina
ry
2.50
2.00
1.50
1.00
0.50
V
OUT
[V]
100
120
0.00
-60
-40
-20
0
20
40
Ta [°C]
60
80
100
120
Figure 1. Temperature vs. Output voltage
Figure 4. Temperature vs. Output voltage
1.920
1.915
1.910
V
OUT
[V]
1.905
1.900
1.895
1.890
-500
1.450
1.445
1.440
1.435
1.430
1.425
lim
0
500
1000
1500
I
Load
[µA]
2.0V
1.0V
50µs
V
OUT
[V]
1.420
-500
0
500
I
Load
[µA]
1000
1500
Figure 2. Load current vs. Output voltage
(Ta = 25°C, V
DD
= 4.0V)
Figure 5. Load current vs. Output voltage
(Ta = 25°C, V
DD
= 2.4V)
pre
PDN
GND
PDN
2.0V
GND
V
OUT
V
OUT
1.0V
GND
GND
50µs
Figure 3. PDN start up response
(Ta = 25°C, V
DD
= 4.0V, C
L
= 100pF)
Figure 6. PDN start up response
(Ta = 25°C, V
DD
= 2.4V, C
L
= 100pF)
NIPPON PRECISION CIRCUITS—5
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