SM6HT
High temperature Transil™ for automotive applications
Features
■
High performance TRANSIL designed to fit
high temperature environment like automotive
applications
High reliability planar technology
High performance in voltage regulation mode
Very low leakage current:
I
R
max. = 5 µA @ T
amb
= 150° C
Peak pulse power: 600 W (10/1000 µs)
Fast response time
Unidirectional type
Low clamping factor
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A
K
Description
This high performance Transil series has been
designed to fit high temperature environment
such as automotive applications, using surface
mount technology.
These devices are using high reliability planar
technology resulting in high performances in
voltage regulation mode and low leakage current
at high temperature.
O
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b
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r
P
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t(
et
l
Order codes
so
b
O
Part number
SM6HT24A
SM6HT27A
SM6HT30A
SM6HT36A
SM6HT39A
SM6HT43A
P
e
SMB
(JEDEC DO-214AA)
od
r
s)
t(
uc
Marking
EMB
EPB
ERB
EVB
EXB
EYB
TM: TRANSIL is a trademark of STMicroelectronics
March 2007
Rev 7
1/8
www.st.com
8
Characteristics
SM6HT
1
Table 1.
Symbol
P
PP
P
I
FSM
T
stg /
T
j
T
L
Characteristics
Absolute maximum rating (T
amb
= 25° C)
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward
current for unidirectional types
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
T
amb
= 50° C
t
p
= 10 ms
T
j
initial = T
amb
Value
600
6
75
-65 to 175
260
Unit
W
W
A
°C
°C
1. for a surge greater than the maximum values, the diode will fail in short circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
20
100
Table 3.
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
V
F
I
Z
Electrical characteristics (T
amb
= 25° C)
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Forward voltage drop
V
F
< 3.5 V @ I
F
= 50 A
(pulse test: t
p
≤
500 µs)
Continuous regulation current
I
F
Types
Marking
SM6HT24A
SM6HT27A
O
SM6HT30A
SM6HT36A
SM6HT39A
SM6HT43A
so
b
te
le
EMB
EPB
ERB
EVB
EXB
EYB
r
P
T
amb
=25° C T
amb
=150° C
max
µA
max
µA
V
min nom max
V
V
24
27
30
36
39
43
V
25.2
28.4
31.5
37.8
41.0
45.2
1
mA
20.5 22.8
23.1 25.7
2
5
25.6 28.5
30.8 34.2
33.3 37.1
36.8 40.9
uc
od
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t(
bs
-O
V
CL
V
BR
V
RM
et
l
o
P
e
I
RM
I
PP
I
od
r
s)
t(
uc
V
Unit
°C/W
°C/W
V
F
I
RM
@ V
BR
V
BR
@ I
R (1)
V
CL
@ I
PP
10/1000 µs
max
V
A
33.2 18.0
37.5 16.0
41.5 14.5
49.9 12.0
53.9 11.1
59.3 10.1
αT
(2)
I
Z
@
T
amb
=50°C
max
10
-4
/°C
9.4
9.6
9.7
9.9
10.0
10.1
max
mA
50
44
40
33
20
28
1. Pulse test: t
p
< 50 ms
2.
ΔV
BR
=
αT
x (T
amb
- 25) x V
BR
(25° C)
2/8
SM6HT
Characteristics
Figure 1.
Peak power dissipation versus
initial junction temperature
Figure 2.
Continuous power dissipation
versus ambient temperature
%
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
2
1
4
3
6
5
7
P(W)
R
th(j-a)
=R
th(j-l)
R
th(j-a)
=100°C/W
T
j
initial(°C)
0
0
25
50
T
amb
(°C)
75
100
125
150
175
Figure 3.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25° C)
Figure 4.
Clamping voltage versus peak
pulse current (T
j
initial = 25° C)
P
PP
(kW)
10.0
T
j
initial = 25 °C
I
PP
(A)
1.0E+02
T
j
initial=25 °C
8/20 µs
1.0E+01
1.0
t
p
(ms)
0.1
0.01
0.10
1.00
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
1000
O
so
b
100
1
te
le
r
P
uc
od
s)
t(
10.00
so
b
-O
1.0E+00
1.0E-01
10
et
l
SM6HT24A
P
e
od
r
s)
t(
uc
10/1000 µs
SM6HT36A
SM6HT39A
SM6HT43A
SM6HT27A
SM6HT30A
V
CL
(V)
100
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
I
FM
(A)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
100.0
T
j
=175°C
10.0
SM6HT24A
SM6HT27A
SM6HT30A
SM6HT36A
SM6HT39A
T
j
=25°C
1.0
V
R
(V)
10
SM6HT43A
V
FM
(V)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100
3/8
Characteristics
SM6HT
Figure 7.
Figure 8.
Variation of thermal impedance
junction to ambient versus pulse
duration (Printed circuit board FR4
with recommended pad layout)
110
Thermal resistance junction to
ambient versus copper surface
under each lead (printed circuit
board FR4, e
Cu
= 35 µm)
Z
th(j-a)
(°C/W)
100.0
Recommended pad layout
R
th(j-a)
(°C/W)
100
90
80
10.0
70
60
50
1.0
40
30
20
t
p
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
10
0
0.0
0.5
1.0
1.5
2.0
S(cm²)
2.5
3.0
3.5
4.0
4.5
5.0
Figure 9.
Variation of leakage current versus
junction temperature (typical
values)
I
R
(µA)
1.0E+00
V
R
= V
RM
T
j
(°C)
1.0E-01
25
50
75
O
so
b
te
le
r
P
uc
od
100
125
s)
t(
150
bs
-O
175
et
l
o
P
e
od
r
s)
t(
uc
4/8
SM6HT
Order information scheme
2
Order information scheme
SM
Surface Mount
Peak Pulse Power
6 = 600 W
High Temperature
Breakdown voltage
43 = 43 V
Type
A = Unidirectional
6
HT
43
A
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
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t(
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5/8
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