Philips Semiconductors
Product specification
Triacs
high noise immunity
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope suitable for surface
mounting, intended for use in
applications requiring high noise
immunity in addition to high,
bidirectional
blocking
voltage
capability and thermal cycling
performance. Typical applications
include motor control, industrial
lighting, heating and static switching.
BT139B series H
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT139B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500H
500
16
140
600H
600
16
140
800H
800
16
140
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
≤
99 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Triacs
high noise immunity
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
BT139B series H
TYP.
-
-
55
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
10
10
10
10
-
-
-
-
-
-
-
0.25
-
TYP.
14
17
18
40
10
25
12
14
8
1.2
0.7
0.4
0.1
MAX.
50
50
50
100
60
90
60
90
60
1.6
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dV
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 95 ˚C; I
T(RMS)
= 16 A;
dI
com
/dt = 7.2 A/ms; gate open circuit
I
TM
= 20 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
MIN.
200
10
-
TYP.
500
20
2
MAX.
-
-
-
UNIT
V/µs
V/µs
µs
March 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
high noise immunity
BT139B series H
25
Ptot / W
BT139
Tmb(max) / C
= 180
95
20
IT(RMS) / A
BT139
20
1
120
90
101
99 C
15
15
60
30
107
10
113
10
5
5
119
0
0
5
10
IT(RMS) / A
15
125
20
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
BT139
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
BT139
1000
ITSM / A
50
IT(RMS) / A
40
30
100
dI
T
/dt limit
T2- G+ quadrant
IT
T
10
10us
I TSM
time
20
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT139
IT
T
100
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
VGT(Tj)
VGT(25 C)
150
1.6
1.4
1.2
1
BT136
Tj initial = 25 C max
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
March 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
high noise immunity
BT139B series H
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
BT139H
T2+ G+
T2+ G-
T2- G-
T2- G+
50
IT / A
Tj = 125 C
Tj = 25 C
BT139
40
typ
Vo = 1.195 V
Rs = 0.018 Ohms
max
30
20
1
10
0.5
0
-50
0
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
TRIAC
10
Zth j-mb (K/W)
BT139
1
unidirectional
bidirectional
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dV/dt (V/us)
off-state dV/dt limit
BT139...H SERIES
3
2.5
2
1.5
1
0.5
TRIAC
1000
100
dIcom/dt =
20 A/ms
10
16
12
9.3
7.2
5.6
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
March 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
high noise immunity
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
4.5 max
1.4 max
BT139B series H
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
March 1997
5
Rev 1.000
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