电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SM6T15A

产品描述600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
产品类别半导体    分立半导体   
文件大小55KB,共3页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
下载文档 详细参数 全文预览

SM6T15A在线购买

供应商 器件名称 价格 最低购买 库存  
SM6T15A - - 点击查看 点击购买

SM6T15A概述

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SM6T15A规格参数

参数名称属性值
端子数量2
元件数量1
最大击穿电压15.8 V
最小击穿电压14.3 V
加工封装描述塑料, SMBJ, 2 PIN
状态DISCONTINUED
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层锡 铅
端子位置
包装材料塑料/环氧树脂
工艺AVALANCHE
结构单一的
二极管元件材料
最大功耗极限5 W
极性单向
二极管类型TRANS 电压 SUPPRESSOR 二极管
关闭电压12.8 V
最大非重复峰值转速功率600 W

文档预览

下载PDF文档
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
SM6T SERIES
T
RANS
Z
ORB
™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage -
6.8 to 220 Volts
Peak Pulse Power -
600 Watts
FEATURES
DO-214AA
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
For surface mounted applications in order
to optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast reponse time: typically less than 1ps from 0 volts to
V
BR
min.
Typical I
D
less than 1µA above 10V
High temperature soldering: 250°C/10 seconds
at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.203)
MAX.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals:
Solder plated solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types: Color band
denotes positive end (cathode)
Standard Packaging:
12mm tape (EIA STD RS-481)
Weight:
0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS
VALUE
UNIT
Peak Pulse Power Dissipation on 10/1000µs
waveform
(NOTES 1, 2, Fig. 1)
Peak Pulse Current on 10/1000µs
waveform
(NOTE 1, Fig. 3)
Power Dissipation on Infinite Heatsink, T
A
=50°C
Peak Forward Surge Current, 10ms Single Half Sine-wave,
Undirectional Only
Max. Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
(NOTE 2)
Thermal Resistance Junction to Leads
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
T
STG
R
ΘJA
R
ΘJL
Minimum 600
See Table 1
5.0
100
150
-65 to +175
100
20
Watts
Amps
Watts
Amps
°C
°C
°C/W
°C/W
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on 5.0mm
2
(.013mm thick) land areas.
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.
1/21/99

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2237  2156  1705  2908  2840  30  43  33  57  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved