SMA5105
Absolute maximum ratings
Symbol
V
DSS
V
GSS
I
D
I
D(
pulse
)
E
AS
*
I
F
I
FSM
V
R
P
T
Ratings
100
±10
±5
±10
(PW≤1ms)
32
5 (PW≤0.5ms, Du≤25%)
10 (PW≤10ms, Single pulse)
120
4
(Ta=25°C, with all circuits operating, without heatsink)
28 (Tc=25°C,
with all circuits operating, with infinite heatsink
)
31.2 (Junction-Air, Ta=25°C, with all circuits operating)
4.46 (Junction-Case, Tc=25°C, with all circuits operating)
150
–40 to +150
N-channel
With built-in flywheel diode
Electrical characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
R
DS(ON)
Ciss
Coss
t
on
t
off
V
SD
t
rr
min
100
Specification
typ
max
±500
250
2.0
4.5
0.27
0.38
470
130
70
50
1.2
330
0.30
0.41
Unit
V
nA
µ
A
V
S
Ω
Ω
pF
pF
ns
ns
V
ns
External dimensions
B
•••
SMA
(T
a
=25°C)
(T
a
=25°C)
Unit
V
V
A
A
mJ
A
A
V
W
W
°C/W
°C/W
°C
°C
Conditions
I
D
=250
µ
A, V
GS
=0V
V
GS
=±10V
V
DS
=100V, V
GS
=0V
V
DS
=10V, I
D
=250
µ
A
V
DS
=10V, I
D
=5A
V
GS
=10V, I
D
=2.5A
V
GS
=4V, I
D
=2.5A
V
DS
=25V, f=1.0MHz,
V
GS
=0V
I
D
=5A, V
DD
50V, V
GS
=5V,
see Fig. 3 on page 16.
I
SD
=5A, V
GS
=0V
I
SD
=±100mA
1.0
3.1
θ
j–a
θ
j–c
Tch
Tstg
2.0
qDiode
for flyback voltage absorption (1 circuit)
Symbol
V
R
V
F
I
R
t
rr
min
120
Specification
typ
max
1.0
100
1.2
10
Unit
V
V
µ
A
ns
Conditions
I
R
=10
µ
A
I
F
=1A
V
R
=120V
I
F
=±100mA
* : V
DD
=20V, L=2mH, I
D
=5A, unclamped, see Fig. E on page 15.
sEquivalent
circuit diagram
2
3
4
9
10
11
1
5
8
12
6
7
Characteristic curves
I
D
-V
DS
Characteristics (Typical)
10
10V
4V
I
D
-V
GS
Characteristics (Typical)
(V
DS
=10V)
10
R
DS(ON)
-I
D
Characteristics (Typical)
0.4
8
8
0.3
V
GS
=4V
(Ω)
I
D
(A)
I
D
(A)
6
(ON)
3.5V
6
V
GS
=10V
0.2
4
3V
4
T
C
=–40°C
25°C
R
DS
0.1
125°C
2
V
GS
=2.5V
2
0
0
2
4
6
8
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
(V)
V
GS
(V)
I
D
(A)
Re
(yfs)
-I
D
Characteristics (Typical)
10
R
DS(ON)
-T
C
Characteristics (Typical)
0.6
Capacitance-V
DS
Characteristics (Typical)
2000
1000
(V
DS
=10V)
(I
D
=2.5A)
V
GS
=0V
f=1MHz
5
0.5
Re (yfs) (S)
0.4
(ON)
V
GS
=4V
Capacitance (pF)
500
Ciss
(Ω)
0.3
V
GS
=10V
Coss
1
25°C
125°C
R
DS
T
C
=–40°C
100
50
Crss
0.2
0.5
0.3
0.05
0.1
10
0.1
0.5
1
5
10
0
–40
0
50
100
150
0
10
20
30
40
50
I
D
(A)
T
C
(°C)
V
DS
(V)
I
DR
-V
SD
Characteristics (Typical)
10
20
Safe Operating Area (SOA)
(T
C
=25°C)
I
D
(pulse) max
10
1m
10
m
s
(1
s
0
µ
s
P
T
-T
a
Characteristics
30
With Silicone Grease
Natural Cooling
All Circuits Operating
10
8
5
)
25
LI
(O
N
D
S
M
ED
IT
sh
20
I
DR
(A)
P
T
(W)
I
D
(A)
6
ot
)
W
ith
R
In
15
ite
fin
4
10V
1
0.5
He
at
sin
10
k
2
4V
5
Without Heatsink
V
GS
=0V
0
0
0.5
1.0
1.5
0.1
0.5
0
1
5
10
50
100
0
50
100
150
V
SD
(V)
V
DS
(V)
T
a
(°C)
104
嵌入式系统
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