SMA540B
Active Biased RF Transistor
PRELIMINARY DATA
•
HIGH GAIN LOW NOISE AMPLIFIERS
G
ms
= 19 dB at 1.8 GHz
•
CURRENT EASY ADJUSTABLE BY AN
EXTERNAL RESISTOR
•
OPEN COLLECTOR OUTPUT
•
TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V
•
TRANSITION FREQUENCY 42 GHz
•
ULTRA MINIATURE SOT323-4L PACKAGE
(LEAD FREE)
APPLICATIONS
•
WIDEBAND APPLICATIONS
•
CELLULAR AND CORDLESS TELEPHONES
•
HIGH FREQUENCY OSCILLATORS
Bias
Bias, 4
C, 3
SOT323-4L (SC70)
ORDER CODE
SMA540BTR
BRANDING
TBD
DESCRIPTION
The SMA540B is a NPN Transistor integrating a cur-
rent mirror as biasing. In this way the IC (collector
current) can be controlled setting the current at Bias
pin according to IC = 10 * IBIAS. The IBIAS current
is easy adjustable using an external resistor.
SMA540B is housed in ultra miniature SOT323-4L
package(LEAD FREE), the relative dimensions are
1.15mmx1.8mm with 0.8mm thickness.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
ceo
V
ebo
I
c
I
b
I
BIAS
P
tot
T
op
T
stg
T
j
Collector emitter voltage
Emitter base voltage
Collector current
Base current
BIAS Current
Total dissipation, T
s
=
107
o
C
Operating temperature
Storage temperature
Max. operating junction temperature
Parameter
Value
4.5
1.5
40
4
4
120
-40 to +85
-65 to +150
150
Unit
V
V
mA
mA
mA
mW
o
C
o
C
o
B, 1
E, 2
C
THERMAL RESISTANCE
R
thjs
Thermal Resistance Junction soldering point
< 270
o
C/W
January, 15 2003
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SMA540B
ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C,
Z
L/S
= 50Ω,
tested in circuit shown in fig.1, unless otherwise specified )
Symbol
Gms
(1)
|S21|
2
F
50Ω
P
-1dB
OIP3
C
CB
CR
Parameter
Maximum stable gain
Insertion power gain
Noise Figure
Output Power at 1dB
Compression Point
Ouput third order intercept point
Collector-base capacitance
Current Ratio (Ic/I
Bias
)
Test Conditions
Vd = 2V, Ic = 20mA
Vd = 2V, Ic = 20mA
Vd = 2V, Ic = 5mA,
Zs = 50Ω
Vd = 2V, Ic = 20mA,
Vd = 2V, Ic = 20mA
Vcb = 2V, f = 1MHz
I
Bias
= 0.5mA, Vd = 2V
f = 1.8GHz
f = 1.8GHz
f = 1.8GHz
f = 1.8GHz
f = 1.8GHz
Min.
Typ.
19
17.5
1.3
9
19
0.13
10
Max.
Unit
dB
dB
dB
dBm
dBm
pF
Note(1): Gms = | S
21
/ S
12
|
PIN CONNECTION
4
3
Pin No.
1
Description
BASE
EMITTER
COLLECTOR
BIAS
Top view
1
2
SOT343
SOT343
2
3
4
Typical configuration (Fig. 1)
V
D
I
D
RF Out
R
Bias
Bias-T
I
C
C, 3
I
Bias
Bias, 4
Bias
B, 1
RF In
N.C.
E, 2
Bias-T
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SMA540B
PACKAGE DIMENSIONS SOT323-4L (SC-70 4 leads)
1.30
1.15-1.35
2.00-2.20
1.15
0.55-0.65
1.90-2.10
1.15-1.35
0.80-1.00
0.45
0.10-0.20
0.25-0.35
0.00-0.10
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SMA540B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
®
2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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