Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications, where high
sensitivity is required in all four
quadrants.
BT134 series E
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT134-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500E
500
4
25
600E
600
4
25
800E
800
4
25
V
A
A
PINNING - SOT82
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
SYMBOL
T2
main terminal 2
gate
main terminal 2
1
2
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
≤
107 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
August 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
BT134 series E
TYP.
-
-
100
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
-
-
-
-
-
-
-
-
-
-
-
0.25
-
TYP.
2.5
4.0
5.0
11
3.0
10
2.5
4.0
2.2
1.4
0.7
0.4
0.1
MAX.
10
10
10
25
15
20
15
20
15
1.70
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
I
TM
= 6 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
MIN.
-
-
TYP.
50
2
MAX.
-
-
UNIT
V/µs
µs
August 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT134 series E
8
7
6
5
4
3
2
1
0
Ptot / W
BT136
Tmb(max) / C
101
104
5
IT(RMS) / A
BT136
1
= 180
120
90
60
30
4
107
110
113
116
119
107 C
3
2
1
122
0
1
2
3
IT(RMS) / A
4
125
5
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
BT136
1000
ITSM / A
BT136
IT
T
ITSM
12
10
time
IT(RMS) / A
Tj initial = 25 C max
100
dI
T
/dt limit
8
6
4
T2- G+ quadrant
2
10
10us
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
107˚C.
VGT(Tj)
VGT(25 C)
30
25
20
15
10
5
0
ITSM / A
BT136
1.6
IT
T
I TSM
time
BT136
1.4
1.2
1
0.8
0.6
0.4
-50
Tj initial = 25 C max
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
August 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT134 series E
3
2.5
2
1.5
1
0.5
IGT(Tj)
IGT(25 C)
BT136E
T2+ G+
T2+ G-
T2- G-
T2- G+
12
10
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.27 V
Rs = 0.091 ohms
BT136
typ
max
8
6
4
2
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
TRIAC
10
Zth j-mb (K/W)
BT136
unidirectional
bidirectional
1
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
0.1
P
D
tp
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dVD/dt (V/us)
3
2.5
2
1.5
1
0.5
TRIAC
1000
100
10
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
August 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs
sensitive gate
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
BT134 series E
mounting
base
2.8
2.3
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
1
4.58
0.5
2
3
2.29
1) Lead dimensions within this
zone uncontrolled.
0.88
max
Fig.13. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1997
5
Rev 1.200
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