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IDT54/74FCT162H245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FAST CMOS 16-BIT
BIDIRECTIONAL
TRANSCEIVER
FEATURES:
−
−
−
−
−
−
−
−
−
0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for ABT functions
Typical t
SK
(o) (Output Skew) < 250ps
Low input and output leakage
≤
1µ A (max.)
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
25 mil pitch SSOP, 19.6 mil pitch TSSOP, 15.7 mil pitch TVSOP
and 25 mil pitch CERPACK packages
Extended commercial range of -40°C to +85°C
Bus Hold retains last active bus state during 3-state
Eliminates the need for external pull up resistors
IDT54/74FCT162H245T/AT/CT/ET
DESCRIPTION:
The FCT162H245T 16-bit transceiver is built using advanced dual
metal CMOS technology. These high-speed, low-power transceivers are
ideal for synchronous communication between two busses (A and B). The
Direction and Output Enable controls operate these devices as either two
independent 8-bit transceivers or one 16-bit transceiver. The direction
control pin (xDIR) controls the direction of data flow. The output enable pin
(xOE) overrides the direction control and disables both ports. All inputs are
designed with hysteresis for improved noise margin.
The FCT162H245T has "Bus Hold" which retains the input's last state
whenever the input goes to high impedance. This prevents "floating" inputs
and eliminates the need for pull-up/down resistors.
FUNCTIONAL BLOCK DIAGRAM
1
DIR
1
OE
1
A
1
1
B
1
1
A
2
1
B
2
1
A
3
1
B
3
1
A
4
1
B
4
1
A
5
1
B
5
1
A
6
1
B
6
1
A
7
1
B
7
1
A
8
1
B
8
2
DIR
2
OE
2
A
1
2
B
1
2
A
2
2
B
2
2
A
3
2
B
3
2
A
4
2
B
4
2
A
5
2
B
5
2
A
6
2
B
6
2
A
7
2
B
7
2
A
8
2
B
8
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
c
1999 Integrated Device Technology, Inc.
AUGUST 1999
DSC-5459/-
IDT54/74FCT162H245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
1
DIR
1
B
1
1
B
2
ABSOLUTE MAXIMUM RATINGS
(1)
48
47
46
45
44
43
42
41
40
39
38
1
OE
1
A
1
1
A
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
V
TERM(2)
V
TERM(3)
T
STG
I
OUT
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
5v16-link
GND
1
B
3
1
B
4
GND
1
A
3
1
A
4
V
CC
1
B
5
1
B
6
V
CC
1
A
5
1
A
6
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXXT
O
and FCT166XXXT (A-Port)
C
/O
Output and I/O terminals.
3. Output and I/O terminals for FCT162XXXT and FCT166XXXT (A-Port).
GND
1
B
7
1
B
8
2
B
1
2
B
2
GND
1
A
7
1
A
8
2
A
1
2
A
2
CAPACITANCE
(T
A
= +25
O
C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
3.5
Max.
6
8
Unit
pF
pF
5v16-link
SO48-1 37
SO48-2
SO48-3 36
E48-1
35
34
33
32
31
30
29
28
27
26
25
NOTE:
1. This parameter is measured at characterization but not tested.
GND
2
B
3
2
B
4
GND
2
A
3
2
A
4
PIN DESCRIPTION
Pin Names
x
OE
xDIR
xAx
xBx
Description
Output Enable Input (Active LOW)
Direction Control Input
Side A Inputs or 3-State Outputs
(1)
Side B Inputs or 3-State Outputs
(1)
V
CC
2
B
5
2
B
6
V
CC
2
A
5
2
A
6
GND
2
B
7
2
B
8
2
DIR
GND
2
A
7
2
A
8
2
OE
NOTE:
1. These pins have “Bus Hold”. All other pins are standard inputs,
outputs or I/Os.
FUNCTION TABLE
(1)
Inputs
xOE
L
L
H
xDIR
L
H
X
Outputs
Bus B Data to Bus A
Bus A Data to Bus B
High Z State
SSOP/ TSSOP/ TVSOP/ CERPACK
TOP VIEW
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Z = High-Impedance
2
IDT54/74FCT162H245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= -40°C to +85°C, V
CC
= 5.0V ±10%; Military: T
A
= -55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
Parameter
Input HIGH Level
Input LOW Level
Input
HIGH
Current
(4)
I
IL
Input
LOW
Current
(4)
I
BHH
I
BHL
I
OZH
I
OZL
V
IK
I
OS
V
H
I
CCL
I
CCH
I
CCZ
Bus-hold Sustain
Current
(4)
High Impedance Output Current
(3-State Output pins)
(5, 6)
Clamp Diode Voltage
Short Circuit Current
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max.
V
IN
= GND or V
CC
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
—
V
CC
= Max.
Standard Input
(5)
Standard I/O
(5)
Bus-hold Input
Bus-hold I/O
Standard Input
(5)
Standard I/O
(5)
Bus-hold Input
Bus-hold I/O
Bus-hold Input
V
CC
= Min.
V
I
= 2V
V
I
= 0.8V
V
O
= 2.7V
V
O
= 0.5V
V
I
= GND
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
I
= V
CC
Min.
2
—
—
—
—
—
—
—
—
—
–50
50
—
—
—
–80
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–0.7
–140
100
5
Max.
—
0.8
±1
±1
±100
±100
±1
±1
±100
±100
—
—
±1
±1
–1.2
–250
—
500
V
mA
mV
µA
µA
µA
Unit
V
V
µA
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. Pins with Bus-hold are identified in the pin description.
5. The test limit for this parameter is ± 5µA at T
A
= –55°C.
6. Does not include Bus-hold I/O pins.
OUTPUT DRIVE CHARACTERISTICS
Symbol
I
ODL
I
ODH
V
OH
V
OL
Parameter
Output LOW Current
Output HIGH Current
Output HIGH Voltage
Output LOW Voltage
Test Conditions
(1)
V
CC
= 5V, V
IN
= V
IH
or V
IL
, V
O
= 1.5V
(3)
V
CC
= 5V, V
IN
= V
IH
or V
IL
, V
O
= 1.5V
(3)
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –16mA MIL
I
OH
= –24mA COM’L
I
OL
= 16mA MIL
I
OL
= 24mA COM’L
5v16-link
Min.
60
–60
2.4
—
Typ.
(2)
115
–115
3.3
0.3
Max.
200
–200
—
0.55
Unit
mA
mA
V
V
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is ±5µA at T
A
= -55°C.
3
IDT54/74FCT162H245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
Vcc = Max.
V
IN
= 3.4V
(3)
Vcc = Max.
Outputs Open
xOE = xDIR = GND
One Input Toggling
50% Duty Cycle
Vcc = Max.
Outputs Open
f
i
= 10MHz
50% Duty Cycle
xOE = xDIR = GND
One Bit Toggling
Vcc = Max.
Outputs Open
f
i
= 2.5MHz
50% Duty Cycle
xOE = xDIR = GND
Sixteen Bits Toggling
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
fi = Input Frequency
Ni = Number of Inputs at fi
T
est C
onditions
(1)
Min.
—
V
IN
= V
CC
V
IN
= GND
—
Typ.
(2)
0.5
60
Max.
1.5
100
Unit
mA
µA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
0.6
1.5
mA
—
0.9
2.3
—
2.4
4.5
(5)
16.5
(5)
—
6.4
4
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