Stanford Microdevices SGA-4463 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high F
T
and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 45mA , the SGA-4463 typically provides +27 dBm output
IP3, 19.2 dB of gain, and +14 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Frequency
24
GAIN
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
SGA-4463
DC-3500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
High Gain : 17 dB at 1950 MHz
Cascadable 50 Ohm
Patented SiGe Technology
0
-10
Return Loss (dB)
18
Gain (dB)
ORL
Operates From Single Supply
Low Thermal Resistance Package
12
IRL
-20
-30
-40
0
1
2
3
4
Frequency (GHz)
5
6
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Units
dB
dB
dB
dBm
dBm
dBm
dBm
M Hz
dB
dB
dB
V
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
2.9
Frequency
850 M Hz
1950 M Hz
2400 M hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
17.3
Ty p.
19.2
17.0
16.0
14.0
12.3
27.0
24.8
3500
24.4
12.8
2.8
3.2
255
3.5
Max.
21.1
6
0
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
(Pow er out per tone = -5dBm)
Bandw idth
Determined by Return Loss (<-10dB)
IRL
ORL
NF
V
D
R
Th
Input Return Loss
Output Return Loss
Noise Figure
Device Voltage
Thermal Resistance
V
S
= 8 V
R
BIAS
= 110 Ohms
I
D
= 45 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100644 Rev.B
Preliminary
SGA-4463 DC-3500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Sy mbol
Parameter
Unit
100
500
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Pow er at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
V
S
= 8 V
R
BIAS
= 110 Ohms
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
20.2
19.8
27.8
14.0
19.2
27.0
14.0
19.9
18.4
23.0
2.5
17.0
24.8
12.3
24.4
12.8
22.2
2.8
16.0
13.7
22.5
22.8
23.4
19.5
21.7
22.8
2.6
21.1
11.9
21.7
16.5
10.5
19.8
Test Conditions:
= 45 mA Typ.
II
D
= 80 mA Typ.
D
T = 25ºC
T
LL
= 25ºC
OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm
OIP
33
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z = 50 Ohms
Z
S
= Z
LL
= 50 Ohms
Noise Figure vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
5
Noise Figure (dB)
4
3
2
1
0
0
0.5
1
1.5
2
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Absolute Limit
90
mA
5V
+8 dBm
+150°C
-40°C to +85°C
+1
50
°C
T
L
=+25ºC
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
T
L
=+25ºC
2.5
3
Operation of this device beyond any one of these limits may
cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
L
)/R
th
35
30
OIP
3
(dBm)
25
20
V
D
=3.2 V, I
D
= 45 mA (Typ.)
18
OIP
3
vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
P
1dB
vs. Frequency
T
L
P
1dB
(dBm)
15
12
9
T
L
=+25ºC
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
6
0
0.5
1
1.5
2
Frequency (GHz)
T
L
=+25ºC
2.5
3
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-100644 Rev. B
Preliminary
SGA-4463 DC-3500 MHz Cascadable MMIC Amplifier
|
S
21
|
vs. Frequency
24
18
S
21
(dB)
S
11
(dB)
|
S
11
|
vs. Frequency
0
-10
-20
-30
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
12
6
T
L
0
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
|
S
12
|
vs. Frequency
-10
-15
S
12
(dB)
S
22
(dB)
|
S
22
|
vs. Frequency
0
-10
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
-20
-25
-20
-30
T
L
-30
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
NOTE: Full S-parameter data available at www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100644 Rev. B
Preliminary
SGA-4463 DC-3500 MHz Cascadable MMIC Amplifier
Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
3
1,2
SGA-4463
6
C
B
RF out
4,5
R ecommended B ias R esistor Values for
I
D
=45mA
S upply Voltage(V
S
)
R
BIAS
6V
62
8V
110
10 V
150
12 V
200
V
S
R
BIAS
Note: R
BIAS
provi des D C bi as stabi li ty over temperature.
1 uF
1000 pF
L
C
A44
C
D
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
C
B
C
B
Part Identification Marking
The part will be marked with an A44 designator on
the top surface of the package.
Pin #
3
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
6 5 4
1
GND
A44
1 2 3
For package dimensions, refer to outline drawing at
NXP MCU
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