SMBJ
Transil™
Datasheet - production data
Description
A
A
K
K
The SMBJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and MIL
STD 883, method 3015, and electrical over stress
according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 600 W (10/1000 μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature
are required to provide reliability and stability
over time.
SMBJ are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
Transil™ is a trademark of STMicroelectronics.
Unidirectional Bidirectional
SMB
(JEDEC DO-214AA)
Features
Peak pulse power:
600 W (10/1000 μs)
4 kW (8/20 μs)
Stand-off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low leakage current:
0.2 μA at 25 °C
1 μA at 85 °C
Operating T
j
max: 150 °C
High power capability at T
j
max:
515 W (10/1000 μs)
JEDEC registered package outline
Complies with the following standards
IEC 61000-4-2 level 4:
15 kV (air discharge)
8 kV (contact discharge)
IEC 61000-4-5
MIL STD 883G, method 3015-7: class 3B:
25 kV HBM (human body model)
Resin meets UL 94, V0
MIL-STD-750, method 2026 soldererability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
January 2018
DocID5616 Rev 11
1/11
www.st.com
This is information on a product in full production.
Characteristics
SMBJ
1
Characteristics
Table 1: Absolute maximum ratings (T
amb
= 25 °C)
Symbol
P
PP
T
j
T
stg
T
L
Parameter
Peak pulse power dissipation
Operating junction temperature range
Storage temperature range
Maximum lead temperature for soldering during 10 s
Table 2: Thermal resistance
Symbol
R
th(j-l)
R
th(j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Figure 1: Electrical characteristics - parameter definitions
Parameter
Value
20
100
Unit
°C/W
°C/W
T
j
initial = T
amb
Value
600
-55 to +150
-65 to +150
260
Unit
W
°C
°C
°C
Figure 2: Pulse definition for electrical characteristics
2/11
DocID5616 Rev 11
SMBJ
I
RM
max at V
RM
V
BR
at I
R
(1)
10 / 1000 µs
V
CL
Order code
25 °C
µA
SMBJ5.A/CA
SMBJ6.0A/CA
SMBJ6.5A/CA
SMBJ8.5A/CA
SMBJ10A/CA
SMBJ12A/CA
SMBJ13A/CA
SMBJ15A/CA
SMBJ16A/CA
SMBJ18A/CA
SMBJ20A/CA
SMBJ22A/CA
SMBJ24A/CA
SMBJ26A/CA
SMBJ28A/CA
SMBJ30A/CA
SMBJ33A/CA
SMBJ36A/CA
SMBJ40A/CA
SMBJ48A/CA
SMBJ58A/CA
SMBJ70A/CA
SMBJ85A/CA
SMBJ100A/CA
SMBJ130A/CA
SMBJ154A/CA
SMBJ170A/CA
SMBJ188A/CA
Notes:
(1)
(2)
Characteristics
Table 3: Electrical characteristics parameter values (T
amb
= 25 °C, unless otherwise specified)
8 / 20µs
V
CL
Max.
V
14.4
14.8
15.2
19.5
21.7
25.3
27.2
32.5
34.4
39.3
42.8
48.3
50
53.5
59
64.3
69.7
76
84
100
121
146
178
212
265
317
353
388
A
275
270
266
205
184
157
147
123
116
102
93
83
80
75
68
62
57
52
48
40
33
27
22.5
19
15
12.6
11.3
10.3
Ω
0.027
0.027
0.027
0.044
0.051
0.068
0.076
0.114
0.127
0.168
0.196
0.257
0.256
0.288
0.363
0.443
0.512
0.611
0.728
1.03
1.51
2.22
3.29
4.69
7.03
10.2
12.7
15.2
I
PP
R
D
Max.
4
αT
(2)
I
PP
R
D
Max.
85 °C
V
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5.0
6.0
6.5
8.5
10
12
13
15
16
18
20
22
24
26
28
30
33
36
40
48
58
70
85
100
130
154
170
188
Min.
V
6.40
6.70
7.20
9.40
11.1
13.3
14.4
16.7
17.8
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
53.3
64.4
77.8
94
111
144
171
189
209
Typ.
mA
6.74
7.05
7.58
9.90
11.7
14.0
15.2
17.6
18.7
21.1
23.4
25.7
28.1
30.4
32.7
35.1
38.6
42.1
46.7
56.1
67.8
81.9
99
117
152
180
199
220
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max.
V
(3)
9.2
10.3
11.2
14.4
17
19.9
21.5
24.4
26
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
77.4
93.6
113
137
162
209
246
275
328
A
(4)
68
61
56
41.7
37
31
29
25.1
23.1
21.5
19.4
17.7
16
14.9
13.8
13
11.8
10.3
9.7
8.1
6.7
5.5
4.6
3.8
3
2.4
2.2
2
Ω
0.031
0.048
0.058
0.096
0.127
0.168
0.191
0.236
0.276
0.328
0.404
0.481
0.587
0.683
0.802
0.888
1.08
1.35
1.59
2.28
3.34
4.91
7.18
10.3
16.5
23.8
30.0
48.5
10
-
/°C
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10.0
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
Pulse test: t
p
< 50 ms
To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
(3)
To
V
BR
at T
J
= V
BR
at 25 °C x (1 + αT x (T
J
- 25))
V
CL
at T
J
= V
CL
at 25 °C x (1 + αT x (T
J
-25))
calculate maximum clamping voltage at other surge level, use the following formula:
V
CLmax
= V
BR max
+ R
D
x I
PPappli
where
I
PPappli
is the surge current in the application
DocID5616 Rev 11
3/11
Characteristics
(4)
Surge
SMBJ
capability given for both directions for unidirectional and bidirectional types.
1.1
Characteristics (curves)
Figure 3: Peak pulse power dissipation versus
initial junction temperature
700
600
500
400
300
1.0
200
100
T
j
(°C)
0
0
25
50
75
100
125
150
175
0.1
1.0E-03
1.0E-02
t
P
(ms)
1.0E-01
1.0E+00
1.0E+01
P
pp
(W)
Figure 4: Peak pulse power versus exponential
pulse duration (T
amb
= 25 °C)
100.0
P
PP
(kW)
T
j
initial = 25 °C
10.0
Figure 5: Clamping voltage versus peak pulse current (exponential waveform, maximum values)
I PP( A )
1000.0
T j initial=25 °C
100.0
10.0
8/20 µ s
10/1000 µ s
S M BJ188A
S M B J5.0A
SM B J24A
SM B J40A
SM B J85A
S M B J12A
1.0
10 ms
V CL
(V)
1000
0.1
1
10
100
4/11
DocID5616 Rev 11
SMBJ
Figure 6: Junction capacitance versus reverse
applied voltage (typical values) (SMBJxxA)
C(pF)
10000
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
SMBJ5.0CA
SMBJ5.0A
Characteristics
Figure 7: Junction capacitance versus reverse
applied voltage (typical values) (SMBJxxCA)
10000
C(pF)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
1000
SMBJ12A
SMBJ24A
1000
SMBJ12CA
SMBJ24CA
SMBJ40CA
100
SMBJ40A
100
SMBJ85CA
SMBJ188CA
SMBJ85A
V
R
(V)
10
1
10
100
SMBJ188A
V
R
(V)
10
1000
1
10
100
1000
Figure 8: Peak forward voltage drop versus peak
forward current (typical values)
1.0E+02
I
FM
(A)
Figure 9: Relative variation of thermal impedance
junction to ambient versus pulse duration
1.00
Z
th(j-a)
/ R
th(j-a)
Recommended pad layout
PCB FR4, copper thickness = 35 µm
1.0E+01
T
j
=125 °C
1.0E+00
T
j
=25 °C
0.10
1.0E-01
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
1.0E-03
t
P
(s)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 10: Thermal resistance junction to ambient
versus copper surface under each lead (printed
circuit board FR4, eCu = 35 μm)
R
th(j-a)
(°C/W)
Figure 11: Leakage current versus junction
temperature (typical values)
I
R
(nA)
1.E+03
V
R
=V
RM
V
RM
< 10 V
110
100
90
80
70
60
(printed ci rc uit boa rd FR4,
copper thic knes s = 35 µm)
1.E+02
1.E+01
50
40
30
20
10
S
Cu
(cm²)
1.E-01
25
50
75
100
125
150
1.E+00
V
R
=V
RM
V
RM
≥ 10 V
T
j
(° C)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DocID5616 Rev 11
5/11
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