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SMBJ150(C)A

产品描述600 W, BIDIRECTIONAL, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小127KB,共4页
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SMBJ150(C)A概述

600 W, BIDIRECTIONAL, SILICON, TVS DIODE

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SMBJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
VOLTAGE RANGE
FEATURES
* For surface mount application
* Built-in strain relief
* Excellent clamping capability
* Low profile package
* Fast response time: Typically less than
1.0ps from 0 volt to BV min.
* Typical I
R
less than 1
µ
A above 10V
* High temperature soldering guaranteed:
260 C / 10 seconds at terminals
5.0 to 170 Volts
600 Watts Peak Power
DO-214AA(SMB)
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
.185(4.70)
.160(4.06)
.012(0.31)
.006(0.15)
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.008
MAX.
(.203)
.220(5.59)
.200(5.08)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end except Bidirectional
* Mounting position: Any
* Weight: 0.093 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATINGS
Peak Power Dissipation at T
A
=25 C, T
P
=1ms(NOTE 1)
Peak Forward Surge Current at 8.3ms Single Half Sine-Wave
superimposed on rated load (JEDEC method) (NOTE 3)
Maximum Instantenous Forward Voltage at 35.0A for
Unidirectional only
Operating and Storage Temperature Range
SYMBOL
P
PK
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 600
100
3.5
-55 to +150
UNITS
Watts
Amps
Volts
C
NOTES:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25 C per Fig. 2.
2
2. Mounted on Copper Pad area of 5.0mm (.013mm Thick) to each terminal.
3. 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum.
DEVICES FOR BIPOLAR APPLICATIONS
1. For Bidirectional use C or CA Suffix for types SMBJ5.0 thru SMBJ170.
2. Electrical characteristics apply in both directions.
250

 
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