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GMC31CG2R2C50NT

产品描述Ceramic Capacitor, Multilayer, Ceramic, 50V, 11.36% +Tol, 11.36% -Tol, C0G, 30ppm/Cel TC, 0.0000022uF, Surface Mount, 1206, CHIP
产品类别无源元件    电容器   
文件大小1MB,共20页
制造商Cal-Chip Electronics
标准  
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GMC31CG2R2C50NT概述

Ceramic Capacitor, Multilayer, Ceramic, 50V, 11.36% +Tol, 11.36% -Tol, C0G, 30ppm/Cel TC, 0.0000022uF, Surface Mount, 1206, CHIP

GMC31CG2R2C50NT规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid1922239395
包装说明, 1206
Reach Compliance Codecompliant
ECCN代码EAR99
电容0.0000022 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度1.6 mm
JESD-609代码e3
长度3.2 mm
安装特点SURFACE MOUNT
多层Yes
负容差11.36%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状RECTANGULAR PACKAGE
封装形式SMT
包装方法TR, CARDBOARD/EMBOSSED PLASTIC, 7/13 INCH
正容差11.36%
额定(直流)电压(URdc)50 V
尺寸代码1206
表面贴装YES
温度特性代码C0G
温度系数-/+30ppm/Cel ppm/°C
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
端子形状WRAPAROUND
宽度1.6 mm

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MULTILAYER CERAMIC CHIP CAPACITORS
-
GMC SERIES
-
APPLICATIONS
-
Can be used on surface mount assembly equipment
-
Our fully integrated manufacturing and total quality
control systems ensure unprecedented high standards of
quality and reliability.
FEATURES
-
Large capacitance values in small sizes
-
Excellent high frequency characteristics
CONSTRUCTION
CHIP CAPACITOR SELECTION
DIELECTRIC TYPE
COG (NPO)
- Capacitance change with temperature is
0-30ppml°C which is less than -0.3%°C from -55°C to
+125°C. Typical capacitance change with life is less than
-0.1 % for NPOs, one-fifth that shown by most other
dielectrics. NPO formulations show no aging characteristics.
Solder plate; 100% matte SN; typical thickness
0.003mm to 0.005mm *(Please see note)
Nickel Barrier Layer
(50 Micro-Inches Electroplated Nickel Min.)
Inner
Electrodes
Ultra stable class I dielectric: linear temperature coefficient, low loss, negligible change of electrical properties with
time, voltage and frequency.
-55°C to° +125 C
0±30ppm°C
0±30ppm/°C
0.1% Max,
0.02% Typlical
•25°C, VDCW:
>100GOFor
1000QF, whichever
is less
•125°C, Vocw:
>10GQF or 100QF
whichever is less
3 X V
DCW
0% per decade
hour
• C<1000pF
f=1MHz V=1.0Vrms
±0.2Vrms T=25°C
• C>1000pF
f=1KHz V=1.0Vrms
±0.2Vrms T=25°C
X7R/X5R
- Its temperature variation of capacitance is within ±15% from -55°C to +125°C (-55°C to +85° C for X5R). The
capacitance change is non-linear.
Stable class II dielectric
X7R=-55C to+125C
X5R=-55C to+85C
±15%
X7R/X5R
Not Applicable
2.5% Max,
1.8% Typical
• 25°C, V
DCW
:
>100GQFor
1000QF,
whichever is less
•125°C, Vocw:
>10GQF or100QF
whichever is less
2.5 X V
DCW
<2% per decade
hour
1KHz 1.0Vrms
±0.2Vrms
25°C values> or =
to 10uF 1.0Vrms
120Hz
1

 
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