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MA4AGSW3_15

产品描述SP3T AlGaAs PIN Diode Switch
文件大小686KB,共9页
制造商MACOM
官网地址http://www.macom.com
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MA4AGSW3_15概述

SP3T AlGaAs PIN Diode Switch

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MA4AGSW3
SP3T AlGaAs PIN Diode Switch
Rev. V7
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.8 dB Insertion Loss
31 dB Isolation at 50 GHz
Low Current consumption
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
DESCRIPTION
The MA4AGSW3 is an Aluminum-Gallium-Arsenide,
single pole, triple throw (SP3T), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
Yellow areas indicate bond pads
Absolute Maximum Ratings
@ T
AMB
= +25°C (Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+150°C
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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