NPN Silicon Switching Transistors
SMBT 2222
SMBT 2222 A
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: SMBT 2907,
SMBT 2907 A (PNP)
Type
SMBT 2222
SMBT 2222 A
Marking
s1B
s1P
Ordering Code
(tape and reel)
Q68000-A6481
Q68000-A6473
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
=
77 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
290
≤
220
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
Unit
SMBT 2222
SMBT 2222 A
30
60
5
40
75
6
600
330
150
– 65 … + 150
mA
mW
˚C
V
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBT 2222
SMBT 2222 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
SMBT 2222
SMBT 2222 A
Collector-base breakdown voltage
I
C
= 10
µ
A
SMBT 2222
SMBT 2222 A
Emitter-base breakdown voltage
I
E
= 10
µ
A
SMBT 2222
SMBT 2222 A
Collector cutoff current
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 50 V,
T
A
= 150 ˚C
V
CB
= 60 V,
T
A
= 150 ˚C
Emitter cutoff current
V
EB
= 3 V
DC current gain
I
C
= 100
µ
A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 150 mA,
V
CE
= 1 V
1)
I
C
= 150 mA,
V
CE
= 10 V
1)
I
C
= 500 mA,
V
CE
= 10 V
1)
I
C
= 10 mA,
V
CE
= 10 V,
T
A
= 55 ˚C
SMBT 2222
SMBT 2222 A
SMBT 2222
SMBT 2222 A
I
EB0
h
FE
35
50
75
50
100
30
40
35
V
CEsat
–
–
–
–
V
BEsat
–
0.6
–
–
–
–
–
–
1.3
1.2
2.6
2.0
–
–
–
–
0.4
0.3
1.6
1.0
–
–
–
–
–
–
–
–
–
–
–
–
300
–
–
–
V
V
(BR)CE0
30
40
V
(BR)CB0
60
75
V
(BR)EB0
5
6
I
CB0
–
–
–
–
–
–
–
–
–
–
10
10
10
10
10
nA
nA
µ
A
µ
A
nA
–
–
–
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
SMBT 2222
SMBT 2222 A
SMBT 2222 A
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
SMBT 2222
SMBT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
SMBT 2222
SMBT 2222 A
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
SMBT 2222
SMBT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
SMBT 2222
SMBT 2222 A
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
SMBT 2222
SMBT 2222 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
SMBT 2222
SMBT 2222 A
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
SMBT 2222
SMBT 2222 A
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
Open-circuit reverse voltage transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
Short-circuit forward current transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
Collector-base time constant
I
E
= 20 mA,
V
CB
= 10 V,
f
= 31.8 MHz
SMBT 2222 A
Noise figure
I
C
= 100
µ
A,
V
CE
= 10 V,
R
S
= 1 kΩ
f
= 1 kHz
SMBT 2222 A
r
b
'C
c
25
–
–
–
200
150
ps
h
12e
–
–
h
21e
50
75
h
22e
5
–
35
–
–
300
375
µ
S
Values
typ.
max.
Unit
f
T
250
300
C
obo
C
ibo
–
–
h
11e
2
0.25
–
–
8
1.25
–
–
30
25
–
–
–
–
–
–
8
MHz
pF
kΩ
10
–4
–
–
8.0
4.0
–
F
–
–
4.0
dB
Semiconductor Group
3
SMBT 2222
SMBT 2222 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
(continued)
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA
V
BE(off)
= 0.5 V
Delay time
Rise time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
=
I
B2
= 15 mA
Storage time
Fall time
Values
typ.
max.
Unit
t
d
t
r
t
stg
t
f
–
–
–
–
–
–
–
–
10
25
225
60
ns
ns
ns
ns
Test circuits
Delay and rise time
Storage and fall time
Oscillograph:
R
> 100
Ω
C
< 12 pF
t
r
<
5 ns
Semiconductor Group
4
SMBT 2222
SMBT 2222 A
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
cb
=
f
(V
CB
)
f
= 1 MHz
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 20 V
Semiconductor Group
5
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