SMBTA 06M
NPN Silicon AF Transistor
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary type: SMBTA 56M (PNP)
4
5
3
2
1
VPW05980
Type
SMBTA 06M
Marking Ordering Code Pin Configuration
s1G
Q62702-A3473
Package
1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
≤
95 °C
Junction temperature
Storage temperature
Symbol
Value
80
80
4
500
1
100
200
1
150
- 65...+150
W
°C
mA
A
mA
Unit
V
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
1)
Junction - soldering point
R
thJA
R
thJS
≤110
≤55
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
1
1
Jun-08-1998
1998-11-01
SMBTA 06M
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
typ.
-
-
-
-
-
-
max.
-
-
-
100
20
100
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
CEO
h
FE
80
80
4
-
-
-
V
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 80 V,
I
E
= 0
Collector cutoff current
V
nA
µA
nA
-
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 °C
Collector cutoff current
V
CE
= 60 V,
I
B
= 0
DC current gain 1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
Collector-emitter saturation voltage1)
100
100
-
-
-
-
-
-
0.25
1.2
V
V
V
CEsat
V
BE(ON)
-
-
I
C
= 100 mA,
I
B
= 10 mA
Base-emitter voltage 1)
I
C
= 100 mA,
V
CE
= 1 V
AC Characteristics
Transition frequency
f
T
C
cb
-
-
100
5
-
-
MHz
pF
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
2
2
Jun-08-1998
1998-11-01
SMBTA 06M
Total power dissipation
P
tot
=
f
(T
A
*;T
S
)
* Package mounted on epoxy
1200
mW
T
S
P
tot
800
T
A
600
400
200
0
0
20
40
60
80
100
120
°C
150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
f
(t
p
)
10
2
10
3
R
thJS
10
1
P
totmax
/ P
totDC
K/W
-
10
2
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
Semiconductor Group
Semiconductor Group
3
3
Jun-08-1998
1998-11-01
SMBTA 06M
DC current gain
h
FE
=
f(I
C
)
Collector-emitter saturation voltage
V
CE
= 1V
EHP00821
I
C
=
f
(V
CEsat
),
h
FE
= 10
10
3
10
3
EHP00819
h
FE
100 C
10
2
25 C
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
10
1
5
10
0 -1
10
10
0
10
1
10
2
mA 10
3
10
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
0.8
Ι
C
V
CEsat
Collector cutoff current
I
CBO
=
f(T
A
)
Collector current
I
C
=
f
(V
BE
)
V
CB
=
V
CEmax
EHP00820
V
CE
= 1V
EHP00815
10
4
nA
10
3
mA
Ι
CBO
10
3
5
10
2
5
10
1
5
10
0
5
10
-1
0
50
max
Ι
C
10
2
5
100 C
25 C
-50 C
10
1
typ
5
10
0
5
10
-1
100
C 150
0
0.5
1.0
V
1.5
T
A
V
BE
Semiconductor Group
Semiconductor Group
4
4
Jun-08-1998
1998-11-01
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