NPN Silicon Switching Transistor
q
High current gain: 0.1 mA to 100 mA
q
Low collector-emitter saturation voltage
SMBT 4124
Type
SMBT 4124
Marking
sZC
Ordering Code
(tape and reel)
Q68000-A8316
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
= 69 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
315
≤
245
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
25
30
5
200
330
150
– 65 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBT 4124
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
Collector-base breakdown voltage
I
C
= 10
µ
A
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain
I
C
= 2 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 50 mA,
I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 50 mA,
I
B
= 5 mA
AC characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Output capacitance
V
CB
= 5 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Small-signal current gain
I
C
= 1 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 0.1 mA,
V
CE
= 5 V,
f
= 10 Hz to 15 kHz
R
S
= 1 kΩ
f
T
C
obo
C
ibo
h
fe
NF
300
–
–
120
–
–
–
–
–
–
–
4
8
480
5
–
dB
MHz
pF
V
(BR)CE0
V
(BR)CB0
V
(BR)EB0
I
CB0
I
EB0
h
FE
120
60
V
CEsat
V
BEsat
–
–
–
–
–
–
360
–
0.3
0.95
V
25
30
5
–
–
–
–
–
–
–
–
–
–
50
50
–
nA
V
Values
typ.
max.
Unit
1)
Pulse test conditions:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
2
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