SMBT5087
PNP Silicon Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30Hz and 15kHz
3
Type
SMBT5087
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
= 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
240
Unit
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2
1
VPS05161
Marking
s2Q
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Value
50
50
3
50
330
150
-65 ... 150
Unit
V
mA
mW
°C
Nov-30-2001
SMBT5087
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector -base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 35 V,
I
E
= 0
V
CB
= 35 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain
1)
I
C
= 100 µA,
V
CE
= 5 V
I
C
= 1 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
Base emitter saturation voltage-
1)
I
C
= 10 mA,
I
B
= 1 mA
AC Characteristics
Transition frequency
I
C
= 0.5 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Short-circuit forward current transf. ratio
I
C
= 1 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
f
= 1 kHz,
f = 200
Hz,
R
S
= 3
k
I
C
= 2 mA,
V
CE
= 5 V,
f
= 10HZ to 15kHz ,
-
-
-
-
2
2
F
dB
h
21e
250
-
900
-
C
cb
-
-
4
pF
f
T
40
-
-
MHz
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
50
50
3
-
-
-
-
-
-
V
-
-
-
h
FE
250
250
250
V
CEsat
V
BEsat
-
-
-
-
-
10
50
20
nA
nA
µA
-
-
-
-
-
-
800
-
-
0.3
0.85
V
1Puls test: t 300µs, D = 2%
R
S
= 10
k
2
Nov-30-2001
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