NPN Silicon Darlington Transistor
q
For general amplifier applications
q
High collector current
q
High current gain
SMBT 6427
Type
SMBT 6427
Marking
s1V
Ordering Code
(tape and reel)
Q68000-A8320
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation,
T
S
= 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
280
≤
210
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
P
tot
T
j
T
stg
Values
40
40
12
500
800
360
150
– 65 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBT 6427
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
Collector-base breakdown voltage
I
C
= 100
µ
A
Emitter-base breakdown voltage,
I
E
= 10
µ
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 ˚C
Collector cutoff current
V
CE
= 30 V,
I
B
= 0
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 50 mA,
I
B
= 0.5 mA
I
C
= 500 mA,
I
B
= 0.5 mA
Base-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 0.5 mA
Base-emitter voltage
I
C
= 50 mA,
V
CE
= 5 V
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 1 mA,
V
CE
= 5 V,
R
S
= 100 kΩ
f
= 1 kHz to 15 kHz
1)
Values
typ.
max.
Unit
V
(BR)CE0
V
(BR)CB0
V
(BR)EB0
I
CB0
40
40
12
–
–
–
–
–
–
–
–
–
–
–
–
50
10
1
50
V
nA
µ
A
µ
A
I
CE0
I
EB0
h
FE
–
–
nA
–
10000 –
20000 –
14000 –
V
CEsat
–
–
V
BEsat
V
BE(on)
–
–
–
–
–
–
100000
200000
140000
V
1.2
1.5
2.0
1.75
f
T
C
obo
C
ibo
NF
130
–
–
–
–
–
–
–
–
7
25
10
MHz
pF
dB
Pulse test conditions:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
2
SMBT 6427
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
CB0
=
f
(V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(V
EB0
)
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Semiconductor Group
3
SMBT 6427
Base-emitter saturation voltage
I
C
=
f
(V
BE sat
),
h
FE
= 1000
Collector-emitter saturation voltage
I
C
=
f
(V
CE sat
),
h
FE
= 1000
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
=
V
CE max
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 5 V
Semiconductor Group
4
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