NPN Silicon Transistors for High Voltages
SMBTA 42
SMBTA 43
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: SMBTA 92, SMBTA 93 (PNP)
Type
SMBTA 42
SMBTA 43
Marking
s1D
s1E
Ordering Code
(tape and reel)
Q68000-A6478
Q68000-A6482
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
= 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
280
≤
210
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
B
P
tot
T
j
T
stg
Values
SMBTA 42 SMBTA 43
300
300
200
200
6
500
100
360
150
– 65 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBTA 42
SMBTA 43
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBTA 42
SMBTA 43
Collector-base breakdown voltage
I
C
= 100
µ
A
SMBTA 42
SMBTA 43
Emitter-base breakdown voltage
I
E
= 100
µ
A
Collector-base cutoff current
V
CB
= 200 V
V
CB
= 160 V
V
CB
= 200 V,
T
A
= 150 ˚C
V
CB
= 160 V,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 3 V
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 30 mA,
V
CE
= 10 V
1)
SMBTA 42
SMBTA 43
SMBTA 42
SMBTA 43
I
EB0
h
FE
25
40
40
40
V
CEsat
–
–
V
BEsat
–
–
–
–
0.5
0.4
0.9
–
–
–
–
–
–
–
–
V
V
(BR)CE0
300
200
V
(BR)CB0
300
200
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
nA
nA
µ
A
µ
A
nA
–
6
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
SMBTA 42
SMBTA 43
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
SMBTA 42
SMBTA 43
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
AC characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Output capacitance
V
CB
= 20 V,
f
= 1 MHz
SMBTA 42
SMBTA 43
f
T
C
obo
50
–
–
MHz
pF
–
–
–
–
3
4
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
SMBTA 42
SMBTA 43
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 10 V,
f
= 100 MHz
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Operating range
I
C
=
f
(V
CE0
)
T
A
= 25 ˚C,
D
= 0
Semiconductor Group
3
SMBTA 42
SMBTA 43
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
= 160 V
Collector current
I
C
=
f
(V
BE
)
V
CE
= 10 V
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 10 V
Semiconductor Group
4
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