VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
94
8553
• Angle of half intensity:
ϕ
= ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with IR emitter series VEMT3700
DESCRIPTION
VSML3710 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power, molded in
a PLCC-2 package for surface mounting (SMD).
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• IR emitter in photointerrupters, sensors and reflective
sensors
• IR emitter in low space applications
• Household appliance
• Tactile keyboards
PRODUCT SUMMARY
COMPONENT
VSML3710
I
e
(mW/sr)
8
ϕ
(deg)
± 60
λ
P
(nm)
940
t
r
(ns)
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSML3710-GS08
VSML3710-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t
p
/T = 0.5, t
p
=
100 µs
t
p
= 100 µs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
VALUE
5
100
200
1
160
UNIT
V
mA
mA
A
mW
Document Number: 81300
Rev. 1.3, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
317
VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode,
RoHS Compliant, 940 nm, GaAlAs/GaAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
acc. figure 11, J-STD-020
J-STD-051, soldered on PCB
TEST CONDITION
SYMBOL
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
°C
°C
°C
°C
K/W
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70
80
90
100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70
80
90 100
21343
T
amb
- Ambient Temperature (°C)
21344
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 1 A
I
F
= 20 mA
I
F
= 1 A
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
4
25
8
60
35
- 0.6
± 60
940
50
0.2
800
500
800
500
0.44
20
MIN.
TYP.
1.35
2.6
- 1.8
100
MAX.
1.6
3.0
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
www.vishay.com
318
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81300
Rev. 1.3, 04-Sep-08
VSML3710
High Power Infrared Emitting Diode,
RoHS Compliant, 940 nm, GaAlAs/GaAs
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Vishay Semiconductors
10 000
100
0.01
1000
0.02
0.05
100
0.2
0.5
DC
10
0.1
I
e
- Radiant Intensity (mW/sr)
100
15903
t
p
/T = 0.005
T
amb
< 60 °C
I
F
- Forward Current (mA)
10
1
1
0.01
95 9985
0.1
1
10
0.1
10
0
t
p
- Pulse Length (ms)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Intensity vs. Forward Current
10
4
I
F
- Forward Current (mA)
Radiant Power (mW)
Φ
e
-
1000
10
3
100
10
2
t
P
= 100
µs
t
P
/T = 0.001
10
1
10
1
10
0
0
13600
1
2
3
4
0.1
10
0
94
8740
V
F
- Forward
Voltage
(V)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.2
I
F
= 1 mA
I
F
- Forward
Voltage
(V)
1.6
1.1
1.0
0.9
0.8
0.7
0
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
0.4
16848
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
0
- 10 0 10
94 7993
50
100
140
T
amb
- Ambient Temperature (°C)
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81300
Rev. 1.3, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
319
VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode,
RoHS Compliant, 940 nm, GaAlAs/GaAs
0°
1.25
10°
20°
30°
Φ
rel
- Relative Radiant Power
e
I
e rel
- Relative Radiant Intensity
1.0
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.75
0.5
0.25
I
F
= 100 mA
0
890
940
990
0.6
94
8013
0.4
0.2
0
14291
λ
-
Wavelength
(nm)
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
3.5 ± 0.2
1.75 ± 0.1
Pin identification
0.9
Mounting Pad Layout
1.2
area covered
with
solder resist
2.8 ± 0.15
C
A
2.6 (2.8)
2.2
4
Ø 2.4
3 + 0.15
1.6 (1.9)
20541
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp
up
3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81300
Rev. 1.3, 04-Sep-08
19841
Time (s)
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
www.vishay.com
320
For technical questions, contact: emittertechsupport@vishay.com
4
ϕ
- Angular Displacement
VSML3710
High Power Infrared Emitting Diode,
RoHS Compliant, 940 nm, GaAlAs/GaAs
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
Vishay Semiconductors
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments. The
tape leader may include the carrier tape as long as the cover
tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least 75
empty compartments and sealed with cover tape.
10.0
9.0
Adhesive tape
120°
Blister tape
4.5
3.5
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
63.5
60.5
Component cavity
94
8670
Fig. 12 - Blister Tape
3.5
3.1
2.2
2.0
180
178
14.4 max.
94
8665
Fig. 15 - Dimensions of Reel-GS08
10.4
8.4
5.75
5.25
3.6
3.4
1.85
1.65
4.0
3.6
8.3
7.7
120°
4.5
3.5
2.5
1.5
0.25
13.00
12.75
62.5
60.0
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
94
8668
Fig. 13 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
321
329
14.4 max.
18857
Fig. 16 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
De-reeling direction
94
8158
> 160 mm
40 empty
compartments
min. 75 empty
compartments
Tape leader
Carrier leader
Carrier trailer
Fig. 14 - Beginning and End of Reel
Document Number: 81300
Rev. 1.3, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
321
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