VSKU/V41, 56..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 45/60 A
(ADD-A-PAK
TM
Generation 5 Power Modules)
FEATURES
• High voltage
• Industrial standard package
• Thick Al metal die and double stick bonding
• Thick copper baseplate
• UL E78996 approved
ADD-A-PAK
TM
RoHS
COMPLIANT
• 3500 V
RMS
isolating voltage
• Totally lead (Pb)-free
PRODUCT SUMMARY
I
T(AV)
45/60 A
• Designed and qualified for industrial level
BENEFITS
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK
TM
module combine the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the majority
of heatsink with increased tolerance of surface roughness
and improved thermal spread.
The Generation 5 of ADD-A-PAK module is manufactured
without hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
• Up to 1600 V
• Full compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al
2
0
3
DBC insulator
• Heatsink grounded
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
I
2
√t
V
RRM
T
J
, T
Stg
Range
CHARACTERISTICS
85 °C
VSKU/V41
45
70
850
890
3.61
3.30
36.1
400 to 1600
- 40 to 125
VSKU/V56
60
95
A
1310
1370
8.50
7.82
85.0
kA
2
√s
V
°C
kA
2
s
UNITS
I
2
t
Document Number: 94515
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSKU/V41, 56..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VSKU/V41, 56
08
12
16
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
900
1300
1700
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
800
1200
1600
15
I
RRM,
I
DRM
AT 125 °C
mA
Thyristor/Thyristor, 45/60 A
(ADD-A-PAK
TM
Generation 5 Power Modules)
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave, T
C
= 85 °C
DC
T
C
t = 10 ms
t = 8.3 ms
Maximum peak, one-cycle
non-repetitive on-state current
I
TSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t for fusing
I
2
t
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
√t
for fusing
I
2
√t
(1)
V
T(TO) (2)
r
t
(2)
VALUES
VSKU/V41
45
70
82
850
VSKU/V56
60
95
80
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
0.85
0.88
3.53
3.41
UNITS
A
°C
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
890
715
750
940
985
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
A
T
J
= 25 °C,
no voltage reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Initial T
J
= T
J
maximum
kA
2
s
T
J
= 25 °C,
no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
Low level
(3)
High level
(4)
Low level
(3)
High level
(4)
I
TM
=
π
x
I
T(AV)
I
FM
=
π
x
I
F(AV)
T
J
= T
J
maximum
kA
2
√s
V
mΩ
Maximum value of threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state voltage
V
TM
T
J
= 25 °C
1.81
1.54
V
Maximum non-repetitive rate of rise
of turned on current
Maximum holding current
Maximum latching current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
π
x I
T(AV)
, I
g
= 500 mA,
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
T
J
= 25 °C, anode supply = 6 V, resistive load
150
A/µs
I
H
I
L
200
400
mA
Notes
(1)
I
2
t for time t = I
2
√t
x
√t
x
x
(2)
Average power = V
2
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
(3)
16.7 % x
π
x I
AV
< I <
π
x I
AV
(4)
I >
π
x I
AV
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94515
Revision: 25-Apr-08
VSKU/V41, 56..PbF Series
Thyristor/Thyristor, 45/60 A
Vishay High Power Products
TM
Generation 5 Power Modules)
(ADD-A-PAK
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
I
GT
V
GD
I
GD
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C, rated V
DRM
applied
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
V
mA
mA
V
UNITS
W
A
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
RMS insulation voltage
Maximum critical rate of rise of
off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
(1)
TEST CONDITIONS
T
J
= 125 °C, gate open circuit
50 Hz, circuit to base, all terminals shorted
T
J
= 125 °C, linear to 0.67 V
DRM
, gate open circuit
VALUES
15
2500 (1 min)
3500 (1 s)
500
UNITS
mA
V
V/µs
Note
(1)
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKU41/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per module
Typical thermal resistance,
case to heatsink
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.
TEST CONDITIONS
VALUES
- 40 to 125
0.23
K/W
0.1
5
Nm
3
110
4
TO-240AA
g
oz.
UNITS
°C
ΔR
CONDUCTION PER JUNCTION
DEVICES
VSKU/V41
VSKU/V56
SINE HALF WAVE CONDUCTION
180°
0.11
0.09
120°
0.13
0.11
90°
0.17
0.13
60°
0.23
0.18
30°
0.34
0.27
RECTANGULAR WAVE CONDUCTION
180°
0.09
0.07
120°
0.14
0.11
90°
0.18
0.14
60°
0.23
0.19
30°
0.34
0.28
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94515
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSKU/V41, 56..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 45/60 A
(ADD-A-PAK
TM
Generation 5 Power Modules)
Maximum Average On-state Power Loss (W)
100
DC
180°
120°
90°
60°
30°
Maximum Allowable Case Temperature (°C)
130
VSK.41.. Series
R
thJC
(DC) = 0.46 K/W
120
80
110
Conduction Angle
60
RMS Limit
100
30°
90
60°
90°
120°
180°
40
Conduction Period
20
VSK.41.. Series
Per Junction
T
J
= 125°C
0
20
40
60
80
80
0
10
20
30
40
50
Average On-state Current (A)
0
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
VSK.41.. Series
R
thJC
(DC) = 0.46 K/W
Peak Half Sine Wave On-state Current (A)
130
800
120
700
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
110
Conduction Period
600
100
30°
60°
90°
120°
180°
DC
500
90
400
VSK.41.. Series
Per Junction
300
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
80
0
20
40
60
80
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
70
60
50
40
30
Conduction Angle
900
800
700
600
500
400
180°
120°
90°
60°
30°
RMS Limit
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
20
10
0
0
10
20
30
40
50
Average On-state Current (A)
VSK.41.. Series
Per Junction
T
J
= 125°C
VSK.41.. Series
Per Junction
0.1
Pulse Train Duration (s)
1
300
0.01
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94515
Revision: 25-Apr-08
VSKU/V41, 56..PbF Series
Thyristor/Thyristor, 45/60 A
Vishay High Power Products
TM
Generation 5 Power Modules)
(ADD-A-PAK
350
SA
R
th
Maximum Total Power Loss (W)
2
0.
300
0.
3
W
K/
K/
W
W
K/
.1
=0
250
200
150
100
50
0
0
20
40
180°
(Sine)
180°
(Rect)
-D
el
0.
5K
/W
ta
R
0. 7
K/
W
1K
/W
2 x VSK.41.. Series
Single Phase Bridge
Connected
T
J
= 125°C
60
80
1.5
K/ W
100
0
20
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics (Single Phase Bridge VSKU and VSKV)
350
R
t hS
Maximum Total Power Loss (W)
300
250
Io
200
150
100
50
0
0
20
40
60
0
80 100 120 140 160 180
20
3 x VSK.41.. Series
6-Pulse Midpoint
Connection Bridge
T
J
= 125°C
60°
(Rect)
3
0.
W
K/
0. 5
K/
W
2
0.
W
K/
A
=0
W
K/
.1
-D
el t
a
R
0 .7
K/ W
1K
/W
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Angle
130
120
110
Conduction Period
VSK.56.. Series
R
thJC
(DC) = 0.40 K/W
VSK.56.. Series
R
thJC
(DC) = 0.40 K/W
100
90
30°
80
70
0
10
20
30
40
50
60
70
Average On-state Current (A)
60°
90°
120°
100
90
80
30°
70
0
20
40
60
80
100
Average On-state Current (A)
60°
90°
120°
180°
DC
180°
Fig. 9 - Current Ratings Characteristics
Fig. 10 - Current Ratings Characteristics
Document Number: 94515
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5