VSKT152/04PbF
Vishay High Power Products
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
FEATURES
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Simple mounting
• UL E78996 approved
New INT-A-PAK
RoHS
COMPLIANT
• Totally lead (Pb)-free
• Designed and qualified for multiple level
APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
150 A
• Battery charges
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
I
2
√t
V
RRM
T
Stg
T
J
Range
- 40 to 125
CHARACTERISTICS
VALUES
150
T
C
85
330
4000
4200
80
73
800
400
- 40 to 150
°C
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
V
RSM
/V
DSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
I
RRM
/I
DRM
AT 125 °C
mA
50
VSKT152/04PbF
Document Number: 94514
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSKT152/04PbF
Vishay High Power Products
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction half sine wave
85
As AC switch
t = 10 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
t = 8.3 ms
I
TSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Value of threshold voltage
On-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I
2
√t
V
T(TO)
r
t
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
330
4000
4200
3350
Sine half wave,
initial T
J
=
T
J
maximum
3500
80
73
56
51
800
0.82
T
J
maximum
I
pk
=
π
x I
T(AV)
, T
J
= 25 °C
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
T
J
= 25 °C, anode supply = 6 V, resistive load
1.44
1.48
200
mA
400
kA
2
√s
V
mΩ
V
kA
2
s
A
°C
VALUES
150
UNITS
A
t = 0.1 to 10 ms, no voltage reapplied
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
gd
t
gr
t
q
T
J
= 25 °C
TEST CONDITIONS
Gate current = 1 A, dl
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
VALUES
1
2
50 to 200
µs
UNITS
I
TM
= 300 A, - dl/dt = 15 A/µs; T
J
= T
J
maximum
V
R
= 50 V; dV/dt = 20 V/µs; gate 0 V, 100
Ω
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
T
J
= 125 °C
50 Hz, circuit to base, all terminals shorted, t = 1 s
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
50
3500
1000
UNITS
mA
V
V/µs
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94514
Revision: 25-Apr-08
VSKT152/04PbF
Thyristor/Thyristor, 150 A
Vishay High Power Products
(New INT-A-PAK Power Module)
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
t
p
≤
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
I
GT
T
J
= 25 °C
T
J
= T
J
maximum
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
I
GD
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
10
300
mA
A/µs
Anode supply = 6 V,
resistive load; R
a
= 1
Ω
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
V
mA
V
UNITS
W
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
Approximate weight
Case style
IAP to heatsink
busbar to IAP
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 150
0.18
K/W
0.05
4 to 6
200
7.1
New INT-A-PAK
Nm
g
oz.
UNITS
ΔR
CONDUCTION PER JUNCTION
DEVICES
180°
VSKT152/04PbF
0.007
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.010
90°
0.013
60°
0.016
30°
0.017
180°
0.009
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.012
90°
0.014
60°
0.016
30°
0.017
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94514
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSKT152/04PbF
Vishay High Power Products
Maximum Allowable Case Temperature (°C)
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
Maximum Average On-state Power Loss (W)
130
120
110
100
90
80
0
VSKT152
RthJC (DC) = 0.182 K/W
300
250
200
DC
180˚
120˚
90˚
60˚
30˚
Conduction Angle
150
RMS Limit
100
50
0
0
50
100
150
200
250
Average On-state Current (A)
Conduction Period
30˚
60˚
90˚
120˚
180˚
VSKT152
Tj = 125˚C
20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave On-state Current (A)
130
120
110
100
90
80
70
60
0
VSKT152
RthJC (DC) = 0.182 K/W
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Conduction Period
30˚
60˚
90˚
120˚
180˚
DC
VSKT152
Per Junction
50
100
150
200
250
10
100
Average On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
Peak Half Sine Wave On-state Current (A)
220
200
180
160
140
120
100
80
60
40
20
0
0
180˚
120˚
90˚
60˚
30˚
RMS Limit
4500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
4000
Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
3500
Rated Vrrm Reapplied
3000
2500
2000
VSKT152
Per Junction
Conduction Angle
VSKT152
Tj = 125˚C
20 40 60 80 100 120 140 160
Average On-state Current (A)
1500
0.01
0.1
Pulse Train Duration (s)
1
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94514
Revision: 25-Apr-08
VSKT152/04PbF
Thyristor/Thyristor, 150 A
Vishay High Power Products
(New INT-A-PAK Power Module)
Maximum Total On-state Power Loss (W)
500
.01
=0
SA
Rth
/W
4K
0.0
08
0.
400
Conduction Angle
300
200
100
0
0
50
VSKT152
Per Module
Tj = 125˚C
180˚
120˚
90˚
60˚
30˚
K/
0.1
6K
W
/W
0.2
5K
/W
0.4
K/W
0.6
K/W
1 K/W
0.
12
W
K/
K/W
R
elta
-D
0
100 150 200 250 300 350
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
900
=
SA
Rth
Maximum Total Power Loss (W)
800
700
600
500
400
300
200
100
0
0
50
100
150
200
250
0
300
2 x VSKT152
Single Phase Bridge
Connected
Tj = 125˚C
/W
4K
0.0
180˚
(Sine)
180˚
(Rect)
K/
W
0.1
2K
/W
0.2
K/W
0.35
K/W
0.6 K/W
0.
08
/W
1K
0.0
R
elta
-D
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
1400
A
hS
Rt
Maximum Total Power Loss (W)
1200
1000
800
600
400
200
0
0
100
200
300
400
0
500
120˚
(Rect)
=
04
0.
W
K/
ta
el
-D
R
0.0
8K
/W
0.1
K/W
0.1
6K
/W
0.25
K/W
0.4 K
/W
1 K/W
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94514
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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