VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK
TM
Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
•
•
•
•
•
•
•
•
•
New INT-A-PAK
TM
RoHS
3500 V
RMS
isolating voltage
COMPLIANT
Industrial standard package
High surge capability
Glass passivated chips
Modules uses high voltage power thyristor/diodes in three
basic configurations
Simple mounting
UL E78996 approved
Totally lead (Pb)-free
Designed and qualified for multiple level
DC motor control and drives
Battery charges
Welders
Power converters
Lighting control
Heat and temperature control
APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
135 to 160 A
•
•
•
•
•
•
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√t
V
RRM
T
J
Range
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
85 °C
VSK.136..
135
300
3200
3360
51.5
47
515.5
VSK.142..
140
310
4500
4712
102
92.5
1013
400 to 1600
- 40 to 125
VSK.162..
160
355
4870
5100
119
108
1190
kA
2
s
kA
2
√s
V
°C
A
UNITS
A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
VSK.136
VSK.142
VSK.162
08
12
14
16
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
50
I
RRM
/I
DRM
AT 125 °C
mA
Document Number: 94513
Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK
TM
Power Modules)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
V
FM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
VSK.136 VSK.142 VSK.162
135
85
300
3200
3360
2700
2800
51.5
47
36.5
33.3
515.5
0.86
1.05
2.02
1.65
1.57
1.57
140
85
310
4500
4712
3785
3963
102
92.5
71.6
65.4
1013
0.83
1
1.78
1.43
1.55
1.55
200
400
mA
160
85
355
4870
5100
4100
4300
119
108
84
76.7
1190
0.8
0.98
1.67
mΩ
(I >
π
x I
T(AV)
), T
J
maximum
I
TM
=
π
x I
T(AV)
, T
J
= 25 °C, 180° conduction
I
TM
=
π
x I
T(AV)
, T
J
= 25 °C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 6 V resistive load = 1
Ω
Gate pulse: 10 V, 100 µs, T
J
= 25 °C
1.38
1.54
1.54
V
V
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
maximum
(I >
π
x I
T(AV)
), T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
maximum
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
gd
t
gr
t
q
T
J
= 25 °C
TEST CONDITIONS
Gate current = 1 A, dl
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
VALUES
1
2
50 to 200
µs
UNITS
I
TM
= 300 A, - dl/dt = 15 A/µs; T
J
= T
J
maximum
V
R
= 50 V; dV/dt = 20 V/µs; gate 0 V, 100
Ω
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
INS
dV/dt
T
J
= 125 °C
50 Hz, circuit to base,
all terminals shorted, t = 1 s
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
50
3500
1000
UNITS
mA
V
V/µs
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94513
Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK
TM
Power Modules)
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
t
p
≤
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
I
GT
T
J
= 25 °C
T
J
= T
J
maximum
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
I
GD
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
10
300
mA
A/µs
Anode supply = 6 V,
resistive load; R
a
= 1
Ω
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
V
mA
V
UNITS
W
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
Approximate weight
Case style
IAP to heatsink
busbar to IAP
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 150
0.18
0.05
4 to 6
200
7.1
New INT-A-PAK
Nm
g
oz.
0.16
K/W
UNITS
ΔR
CONDUCTION PER JUNCTION
DEVICES
180°
VSK.136
VSK.142
VSK.162
0.007
0.0019
0.0030
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.01
0.0019
0.0031
90°
0.013
0.0020
0.0032
60°
0.0155
0.0020
0.0033
30°
0.017
0.0021
0.0034
180°
0.009
0.0018
0.0029
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.012
0.0022
0.0036
90°
0.014
0.0023
0.0039
60°
0.015
0.0023
0.0041
30°
0.017
0.0020
0.0040
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94513
Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK
TM
Power Modules)
350
M axim um Averag e O n-state Pow er Loss (W )
300
250
200
150
100
50
0
0
50
1 00
C o n d uc tio n P eriod
130
120
110
VSK.136.. Series
RthJC (DC) = 0.18 K/W
Maximum Allowable Case Temperature (°C)
Conduction Angle
100
90
80
70
0
20
40
60
80
100
120
140
DC
180
120
90
60
30
RM S Lim it
30°
60°
90°
120°
180°
VSK .136.. Se ries
Per Junction
T
J
= 12 5°C
1 50
2 00
2 50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
A vera ge O n -sta te C urrent (A)
Fig. 4 - On-State Power Loss Characteristics
130
Maximum Allowable Case Temperature (°C)
120
110
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
VSK.136.. Series
RthJC (DC) = 0.18 K/W
30 0 0
28 0 0
26 0 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
1
A t A ny R ate d Lo ad Co nditio n A n d W ith
R ated V
RRM
A pplied Follo w ing Surge .
In itial T
J
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
100
30°
90
80
70
0
50
100
150
200
250
Average On-state Current (A)
60°
90°
120°
180°
DC
VSK.136.. Series
Per Junction
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
250
200
150
100
50
0
0
180
120
90
60
30
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
300
35 0 0
30 0 0
Maxim um No n Repetitive Surge Curre nt
V ers us Pulse Train D uratio n. C ontrol
O f Co nductio n M ay Not Be M aintained.
In itial T
J
= 125°C
No V oltag e Re ap plie d
Ra te d V
Re ap plie d
RRM
25 0 0
RMS Limit
20 0 0
Conduction Angle
VSK.136.. Series
Per Junction
TJ = 125°C
30
60
90
120
150
15 0 0
VSK.1 36.. Se ries
Pe r Ju nction
10 0 0
0 .0 1
0.1
Pulse Tra in D ura tion (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94513
Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK
TM
Power Modules)
450
0.
0.
M axim um Tota l O n -sta te Pow e r Loss (W )
R
th
12
08
0 .0
400
350
300
250
200
150
100
50
0
0
50
100
C onductio n Angle
180
120
90
60
30
0.
0.
K/
W
W
K/
W
K/
16
SA
4K
/W
W
K/
.01
= 0
25
K/
W
-
Δ
0 .4
K/ W
R
0 .6
K/ W
1 K/
W
VSK.136.. Se rie s
Pe r M odule
T
J
= 12 5°C
150
200
250
300
0
25
50
75
1 00
125
Tota l R M S Outp ut C urre nt (A)
M axim um A llowab le Am bient Tem pera ture (°C)
Fig. 7 - On-State Power Loss Characteristics
1 0 00
A
hS
R
t
M axim um To ta l P o we r Lo ss (W )
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
0
55
11 0
165
220
20 5
7
25
2 x VSK.136.. Series
Single P hase Brid ge
C onnected
T
J
= 125°C
0.35
K/ W
0.
04
0.
=
K/
08
0.0
W
180
(Sine )
180
(Re ct)
0.
12
K/
W
/W
1K
K/
W
-
Δ
R
0 .2
K/
W
0. 6 K
/W
50
75
100
125
Total O utp ut C urre nt (A)
M axim um Allowab le Am bient Te m p era ture (°C )
Fig. 8 - On-State Power Loss Characteristics
15 0 0
M a xim u m To ta l Po w e r Lo ss (W )
R
t
A
hS
12 0 0
0.
08
=
0.
04
K/
W
90 0
120
(Rec t)
0.1
K/
-
W
Δ
R
K/
W
0 .1
60 0
3 x VSK.1 3 6.. Serie s
Th ree Ph a se B rid g e
C o n n ec te d
T
J
= 1 2 5°C
0
10 0
20 0
3 00
6K
/W
30 0
K/ W
0 .4 K
/W
0 . 25
1 K/ W
0
40
00
25
50
75
1 00
1 25
To ta l O u tp u t C u rre nt (A)
M axim u m A llo w a b le A m b ien t Tem p e ra tu re (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94513
Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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