VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Vishay Semiconductors
Ultralow V
F
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
• Ultrafast recovery time, extremely low V
F
and
soft recovery
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• True 2 pin package
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
1
Cathode
3
Anode
1
Cathode
2
Anode
DESCRIPTION
State of the art, ultralow V
F
, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VS-8E2TL06
VS-8E2TL06FP
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220 FP
8A
600 V
1.07 V
60 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PCs, TVs and
monitors, games units and DVD ac-to-dc power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 156 °C
T
C
= 131 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
125
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1
0.85
0.04
10
6
8
MAX.
-
1.07
0.90
4
70
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93168
Revision: 19-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Vishay Semiconductors
Ultralow V
F
Ultrafast Rectifier,
8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 8.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
60
150
200
255
15
20
1.5
2.4
MAX.
100
250
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
-
6
(5)
Case style TO-220
Case style TO-220 FULL-PAK
TYP.
-
2
5
-
0.5
2
0.07
-
MAX.
175
2.4
5.5
70
-
-
-
12
(10)
8E2TL06
8E2TL06FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
FULL-PAK
Thermal resistance,
junction to ambient per leg
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93168
Revision: 19-Aug-10
VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Ultralow V
F
Ultrafast Rectifier,
8 A FRED Pt
®
I
F
- Instantaneous Forward Current (A)
100
100
Vishay Semiconductors
I
R
- Reverse Current (mA)
T
J
= 175 °C
10
T
J
= 150 °C
1
T
J
= 125 °C
T
J
= 100 °C
0.1
T
J
= 75 °C
0.01
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.2
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
93168_02
0
100
200
300
400
500
600
93168_01
V
F
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
C
T
- Junction Capacitance (pF)
10
1
0
93168_03
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single
pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
93168_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (TO-220)
Document Number: 93168
Revision: 19-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Vishay Semiconductors
10
Ultralow V
F
Ultrafast Rectifier,
8 A FRED Pt
®
Z
thJC
- Thermal Impedance (°C/W)
1
Single
pulse
(thermal resistance)
0.1
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
0.01
0.1
1
93168_05
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
180
170
160
DC
150
140
130
120
110
See
note (1)
100
0
2
4
6
8
10
12
Square
wave (D = 0.50)
80 % rated V
R
applied
170
DC
160
150
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note (1)
140
0
93168_06
2
4
6
8
10
12
93168_07
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current (TO-220)
12
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss (W)
10
8
6
4
2
0
0
2
4
6
8
10
12
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
93168_08
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
; Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93168
Revision: 19-Aug-10
VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Ultralow V
F
Ultrafast Rectifier,
8 A FRED Pt
®
400
350
I
F
= 8 A, T
J
= 125 °C
300
2.5
I
F
= 8 A, T
J
= 125 °C
3.0
Vishay Semiconductors
200
150
I
F
= 8 A, T
J
= 25 °C
100
50
0
100
Q
rr
(nC)
250
t
rr
(ns)
2.0
I
F
= 8 A, T
J
= 25 °C
1.5
1000
1.0
100
93168_10
1000
93168_09
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93168
Revision: 19-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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