VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 30 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Available
2
3
1
TO-247AC modified
Base
cathode
2
1
TO-247AC
Base
cathode
2
2
3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
1
Cathode
3
Anode
Anode
1
Anode
3
VS-30EPF0...
VS-30APF0...
DESCRIPTION
The VS-30EPF0... and VS-30APF0... soft recovery rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-247AC modified (2 pins), TO-247AC
30 A
200 V, 400 V, 600 V
1.41 V
320 A
60 ns
150 °C
Single die
0.6
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
CHARACTERISTICS
Sinusoidal waveform
VALUES
30
200 to 600
320
1.2
60
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-30EPF02PbF, VS-30APF02PbF
VS-30EPF02-M3, VS-30APF02-M3
VS-30EPF04PbF, VS-30APF04PbF
VS-30EPF04-M3, VS-30APF04-M3
VS-30EPF06PbF, VS-30APF06PbF
VS-30EPF06-M3, VS-30APF06-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
5
I
RRM
AT 150 °C
mA
Revision: 11-Feb-16
Document Number: 93693
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 98 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
30
270
320
365
515
5150
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
30 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.41
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 A
pk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Maximum thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.8
40
0.2
6
0.21
6 (5)
12 (10)
30EPF02
Case style TO-247AC modified
Marking device
Case style TO-247AC
30EPF04
30EPF06
30APF02
30APF04
30APF06
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Revision: 11-Feb-16
Document Number: 93693
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
www.vishay.com
150
140
130
Ø
Vishay Semiconductors
45
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
30.PF.. Series
R
thJC
(DC) = 0.8 K/W
40
35
30
25
20
15
10
5
0
0
5
180°
120°
90°
60°
30°
DC
120
110
100
30°
60°
Conduction angle
RMS limit
Ø
Conduction period
30.PF.. Series
T
J
= 150 °C
10
15
20
25
30
35
90°
90
0
5
10
15
20
120° 180°
30
35
25
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
30.PF.. Series
R
thJC
(DC) = 0.8 K/W
280
260
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
0
5
10
15
20
30°
60°
Peak Half Sine Wave
Forward Current (A)
240
220
200
180
160
140
120
100
80
60
Ø
Conduction period
90°
120°
180°
25
30
35
40
DC
45
50
VS-30.PF..
Series
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
350
180°
120°
90°
60°
30°
RMS limit
300
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
10
5
0
0
Peak Half Sine Wave
Forward Current (A)
250
200
150
100
50
Ø
Conduction angle
30.PF.. Series
T
J
= 150 °C
5
10
15
20
25
VS-30.PF..
Series
0.1
1
10
0
0.01
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 93693
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
30.PF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
30.PF.. Series
T
J
= 25 °C
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
0.15
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
4.0
I
FM
= 30 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
FM
= 5 A
I
FM
= 1 A
0
200
400
600
800
1000
I
FM
= 10 A
30.PF.. Series
T
J
= 25 °C
I
FM
= 20 A
0.10
0.05
0
0
200
400
600
800
1000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.5
30.PF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
10
9
30.PF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
0.4
8
7
6
5
4
3
2
1
0.3
0.2
I
FM
= 10 A
0.1
I
FM
= 5 A
I
FM
= 1 A
0
200
400
600
800
1000
0
0
200
400
600
800
1000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 93693
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
www.vishay.com
70
60
30.PF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
100
30.PF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
40
I
FM
= 5 A
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
50
40
30
20
10
0
0
200
400
600
I
rr
- Typical Reverse
Recovery Current (A)
80
60
I
FM
= 1 A
20
I
FM
= 1 A
0
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
0.001
0.01
0.1
30.PF.. Series
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 93693
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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