VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Primary MTP IGBT Power Module
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt
®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• UL approved file E78996
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
MTP
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
PRIMARY CHARACTERISTICS
FRED Pt
®
AP DIODE, T
J
= 150 °C
V
RRM
I
F(DC)
at 80 °C
V
F
at 25 °C at 60 A
IGBT, T
J
= 150 °C
V
CES
V
CE(on)
at 25 °C at 60 A
I
C
at 80°C
FRED
V
R
I
F(DC)
at 80 °C
V
F
at 25 °C at 60 A
Speed
Package
Circuit configuration
Pt
®
600 V
1.98 V
83 A
CHOPPER DIODE, T
J
= 150 °C
600 V
17 A
2.06 V
30 kHz to 150 kHz
MTP
Dual forward
600 V
11 A
2.08 V
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
FRED Pt
antiparallel
diode
Maximum continuous forward current
T
J
= 150 °C maximum
Maximum power dissipation
Collector to emitter voltage
Gate to emitter voltage
IGBT
Maximum continuous collector current
at V
GE
= 15 V, T
J
= 150 °C maximum
Clamped inductive load current
Maximum power dissipation
Repetitive peak reverse voltage
FRED Pt
chopper diode
Maximum continuous forward current
T
J
= 150 °C maximum
Maximum power dissipation
Maximum operating junction temperature
Storage temperature range
Isolation voltage
SYMBOL
V
RRM
I
F(DC)
P
D
V
CES
V
GE
I
C
I
LM
P
D
V
RRM
I
F
P
D
T
J
T
Stg
V
ISOL
V
RMS
t = 1 s, T
J
= 25 °C
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 25 °C
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
J
= 25 °C
I
GES
max. ± 250 ns
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
17
11
25
600
± 20
121
83
300
462
600
26
17
56
150
-40 to +150
3500
W
V
A
W
°C
V
A
UNITS
V
A
W
V
V
Revision: 02-Mar-18
Document Number: 93412
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
SYMBOL
BV
RRM
V
FM
BV
CES
V
BR(CES)
/T
J
V
CE(on)
V
GE(th)
I
CES
I
GES
V
FM
BV
RM
I
RM
TEST CONDITIONS
0.5 mA
I
F
= 60 A
I
F
= 60 A, T
J
= 125 °C
V
GE
= 0 V, I
C
= 0.5 mA
I
C
= 0.5 mA (25 °C to 125 °C)
V
GE
15 V, I
C
= 60 A
V
GE
= 15 V, l
C
= 60 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 500 μA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
V
GE
= ± 20 V
I
F
= 60 A
I
F
= 60 A, T
J
= 125 °C
0.5 mA
V
RRM
= 600 V
V
RRM
= 600 V, T
J
= 125 °C
MIN.
600
-
-
600
-
-
-
2.9
-
-
-
-
-
600
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
2.08
2.05
-
0.6
1.93
2.36
-
-
-
-
2.06
1.83
-
-
-
67
120
620
4.5
67
130
9.5
128
601
MAX.
-
2.43
2.3
-
-
2.29
2.80
6.0
100
2.0
± 100
2.53
2.26
-
75
0.5
11
160
850
6.0
85
250
12.0
165
900
μA
mA
A
ns
nC
A
ns
nC
A
ns
nC
V
UNITS
V
V
V
V/°C
V
V
μA
mA
nA
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Blocking voltage
AP diode
Forward voltage drop
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
IGBT
Collector to emitter voltage
Gate threshold voltage
Collector to emitter
leakage current
Gate to emitter leakage
Forward voltage drop
FRED Pt
chopper
diode
Blocking voltage
Reverse leakage current
RECOVERY PARAMETER
Peak reverse recovery current
AP diode
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
FRED Pt
chopper
diode
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
I
rr
t
rr
Q
rr
I
rr
t
rr
Q
rr
I
rr
t
rr
Q
rr
I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V
I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V
I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V, T
J
= 125 °C
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
SYMBOL
Q
g
Q
gs
Q
gd
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
TEST CONDITIONS
I
C
= 60 A
V
CC
= 480 V
V
GE
= 15 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
0.2
0.96
1.16
240
47
240
66
0.33
1.45
1.78
246
50
246
71
9500
780
120
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
nC
mJ
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V
R
g
= 5
,
L = 500 μH, T
J
= 25 °C
ns
PFC IGBT
mJ
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V
R
g
= 5
,
L = 500 μH, T
J
= 125 °C
ns
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
pF
Revision: 02-Mar-18
Document Number: 93412
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
T
J
= 25 °C
T
J
= 25 °C/T
J
= 85 °C
MIN.
-
-
TYP.
30 000
4000
MAX.
-
-
UNITS
K
THERMISTOR ELECTRICAL CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Resistance
B value
SYMBOL
R
B
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
AP FRED Pt diode
IGBT
FRED Pt
chopper diode
Junction to case diode thermal resistance
Junction to case IGBT thermal resistance
Junction to case diode thermal resistance
Case to sink, flat, greased surface per module
Mounting torque ± 10 % to heatsink
Approximate weight
(1)
SYMBOL
MIN.
-
-
-
TYP.
-
-
-
0.06
-
65
MAX.
4.9
0.27
2.25
-
4
-
UNITS
R
thJC
°C/W
R
thCS
-
-
-
°C/W
Nm
g
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
160
140
250
V
GE
= 18 V
200
V
GE
= 15 V
150
V
GE
= 12 V
V
GE
= 9 V
Maximum Allowable
Case Temperature (°C)
120
100
80
60
40
I
C
(A)
100
50
20
0
0
20
40
60
80
100
120
140
93412_03
0
0
1
2
3
4
5
93412_01
I
C
- Continuous Collector Current (A)
V
CE
(V)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
1000
Fig. 3 - Typical IGBT Output Characteristics, T
J
= 25 °C
250
100
200
V
GE
= 18 V
I
C
(A)
I
C
(A)
10
150
V
GE
= 15 V
V
GE
= 9 V
1
100
V
GE
= 12 V
0.1
50
0.01
1
93412_02
0
10
100
1000
93412_04
0
1
2
3
4
5
V
CE
(V)
V
CE
(V)
Fig. 2 - IGBT Reverse BIAS SOA T
J
= 150 °C, V
GE
= 15 V
Fig. 4 - Typical IGBT Output Characteristics, T
J
= 125 °C
Revision: 02-Mar-18
Document Number: 93412
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
100
90
80
70
60
50
40
30
20
10
0
0.5
1.0
1.5
2.0
2.5
3.0
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
250
200
T
C
= 125 °C
T
C
= 25 °C
I
C
(A)
150
100
50
0
5
93412_05
6
7
8
9
10
V
GE
(V)
93412_08
V
F
- Anode to Cathode
Forward Voltage Drop (V)
Fig. 5 - Typical IGBT Transfer Characteristics, T
J
= 125 °C
Fig. 8 - Typical Diode Forward Voltage Characteristics
of Antiparallel Diode, t
p
= 500 μs
160
140
120
100
80
60
40
20
0
1
150 °C
0.1
0.01
25 °C
0.001
0.0001
100
93412_06
200
300
400
500
600
93412_09
Allowable Case Temperature (°C)
10
I
CES
(mA)
0
5
10
15
20
V
CES
(V)
I
F
- Continuous Forward Current (A)
Fig. 9 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
I
F
- Instantaneous Forward Drop (A)
5.0
100
90
80
70
60
50
40
30
20
10
0
0.25
0.75
1.25
1.75
2.25
2.75
3.25
3.75
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
4.5
T
J
= 25 °C
V
geth
(V)
4.0
3.5
T
J
= 125 °C
3.0
0.2
93412_07
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
93412_10
I
C
(mA)
Fig. 7 - Typical IGBT Gate Thresold Voltage
V
F
- Forward Voltage Drop (V)
Fig. 10 - Typical PFC Diode Forward Voltage
Revision: 02-Mar-18
Document Number: 93412
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
5
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
4
Energy (mJ)
3
E
off
2
E
on
1
20
0
0
5
10
15
20
25
30
35
40
93412_14
0
0
10
20
30
40
50
93412_11
I
F
- Continuous Forward Current (A)
Fig. 11 - Maximum Continuous Forward Current vs.
Case Temperature PFC Diode
R
g
(Ω)
Fig. 14 - Typical IGBT Energy Loss vs. R
g
, T
J
= 125 °C
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
0.1
T
J
= 150 °C
0.01
1000
Switching
Time (ns)
t
d(off)
t
d(on)
100
t
f
I
R
(mA)
0.001
0.0001
T
J
= 25 °C
t
r
0.00001
100
93412_12
10
200
300
400
500
600
93412_15
0
20
40
60
80
100
120
V
R
(V)
I
C
(A)
Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs.
Reverse Voltage
2.0
Fig. 15 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
DD
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
1000
t
d(off)
1.2
Switching
Time (ns)
1.6
t
d(on)
Energy (mJ)
100
t
f
t
r
0.8
E
off
0.4
E
on
0
0
93412_13
10
20
40
60
80
100
120
93412_16
0
10
20
30
40
50
I
C
(A)
R
g
(Ω)
Fig. 13 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 16 - Typical IGBT Switching Time vs. R
g
, T
J
= 125 °C
I
C
= 100 A, V
CE
= 360 V, V
GE
= 15 V, L = 500 μH
Revision: 02-Mar-18
Document Number: 93412
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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