MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
Available
1500 Watt Low Capacitance Surface
Mount Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
This high-reliability surface mount Transient Voltage Suppressor (TVS) product family includes a rectifier
diode in series with and in the opposite direction to the primary TVS protection diode. The circuit being
protected sees only the rectifier diode's low 100 pF capacitance. They are available in either a DO-
215AB (gull-wing) or DO-214AB (J-bend) package and RoHS compliant versions are available. The low
capacitance of these TVS devices allows them to be applied to the protection of high-frequency signal
and communication lines in inductive switching environments or systems exposed to the secondary
effects of lightning per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics.
They also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability
is required, two of these low capacitance TVS devices may be used in parallel and opposite directions
(anti-parallel) for complete ac protection (figure
6).
DO-215AB
(SMCG) Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
Available in standoff voltage range of 6.5 to 170 V.
Low capacitance of 100 pF or less.
Molding compound flammability rating: UL94V-O.
Two different terminations available in C-bend (modified J-bend with DO-214AB) or Gull-wing
(DO-215AB).
Screening available in reference to MIL-PRF-19500. Refer to
High Reliability Up-Screened Plastic
Products Portfolio
for more details on the screening options.
(See
part nomenclature
for all available options.)
RoHS compliant versions available.
DO-214AB
(SMCJ) Package
NOTE: All SMC series are
equivalent to prior SMM package
identifications.
•
Also available in:
Commercial grade
SMCG(J)LCE6.5 –
SMCG(J)LCE170Ae3
APPLICATIONS / BENEFITS
•
•
•
1500 watts peak pulse power at 10/1000
µs.
Low capacitance for high frequency data line protection to 1 MHz.
Protection for aircraft fast data rate lines up to level 5 waveform 4 and level 2 waveform 5A in
RTCA/DO-160D (also see
MicroNote 130)
& ARINC 429 with bit rates of 100 kb/s (per ARINC 429,
Part 1, par 2.4.1.1).
IEC61000-4-2 ESD 15 kV (air), 8 kV (contact).
IEC61000-4-5 (lightning) as further detailed in LCE6.5 thru LCE170A
data sheet.
T1/E1 line cards.
Base stations, WAN & XDSL interfaces.
CSU/DSU equipment.
Case 1 package
(axial-leaded)
MLCE6.5 – MLCE170Ae3
•
•
•
•
•
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01002, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 1 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Peak Pulse Power dissipation @ 25 ºC (at 10/1000
µs,
(2)
see
figures 1, 2, and 3)
Clamping Factor
@ Full Rated Power
@ 50 % Rated Power
t
clamping
(0 volts to V
(BR)
min.)
Rated Average Power Dissipation
T
L
= +50 ºC
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJL
P
PP
CF
t
clamping
P
M(AV)
T
SP
Value
-65 to +150
20
1500
1.4
1.30
-9
< 5x10
5.0
260
Unit
ºC
ºC/W
W
s
W
o
C
Notes:
1. Typical junction to lead (tab) at mounting plane.
2. With a repetition rate of 0.01% or less. When pulse testing, do not pulse in opposite direction (see “application
schematics”
section herein
and figures 5 & 6 for further protection in both directions.)
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
MARKING: Part number with abbreviated prefix (MCLC6.5A, MCLC6.5Ae3, MCLC33, MCLC33e3, etc.).
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-481-B with 16 mm tape (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.25 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
*(see
High Reliability
Up-Screened Plastic
Products Portfolio)
Surface Mount
Package
1500 W Power Level
Lead Form
G = Gull-wing
J = J-bend
SM
C
G
LC
E
6.5
A
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
+/-5%Tolerance Level
Reverse Stand-Off Voltage
(see
Electrical Characteristics
table)
Encapsulated Plastic Package
Low Capacitance
RF01002, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 2 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
SYMBOLS & DEFINITIONS
Definition
Breakdown Current: The current used for measuring breakdown voltage V
(BR)
.
Standby Current: The current at the rated standoff voltage V
WM
.
Forward Current: The forward current dc value, no alternating component.
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
Peak Impulse Current: The peak current during the impulse.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
Clamping Voltage: The maximum clamping voltage at specified I
PP
(peak pulse current) at the specified pulse
conditions.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as the standoff voltage.
Symbol
I
(BR)
I
D
I
F
I
O
I
PP
P
PP
V
C
V
(BR)
V
WM
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
Reverse
Stand-Off
Voltage
V
WM
Breakdown Voltage
V
(BR)
@ I
(BR)
Volts
Maximum
Reverse
Leakage
@V
WM
I
D
µ
A
1000
500
250
100
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
@I
PP
V
C
Volts
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.5
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
129
146
162
178
193
209
243
259
275
Maximum
Peak Pulse
Current I
PP
@10/1000
Amps
Maximum
Capacitance
@ 0 Volts,
f = 1 MHz
Working
Inverse
Blocking
Voltage
V
WIB
Volts
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
150
150
150
150
150
150
150
150
300
300
300
300
300
300
300
300
Inverse
Blocking
Leakage
Current
I
IB
µ
A
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Peak
Inverse
Blocking
Voltage
V
PIB
Volts
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
Part Number
Gull-Wing
MSMCGLCE6.5A
MSMCGLCE7.0A
MSMCGLCE7.5A
MSMCGLCE8.0A
MSMCGLCE8.5A
MSMCGLCE9.0A
MSMCGLCE10A
MSMCGLCE11A
MSMCGLCE12A
MSMCGLCE13A
MSMCGLCE14A
MSMCGLCE15A
MSMCGLCE16A
MSMCGLCE17A
MSMCGLCE18A
MSMCGLCE20A
MSMCGLCE22A
MSMCGLCE24A
MSMCGLCE26A
MSMCGLCE28A
MSMCGLCE30A
MSMCGLCE33A
MSMCGLCE36A
MSMCGLCE40A
MSMCGLCE43A
MSMCGLCE45A
MSMCGLCE48A
MSMCGLCE51A
MSMCGLCE54A
MSMCGLCE58A
MSMCGLCE60A
MSMCGLCE64A
MSMCGLCE70A
MSMCGLCE75A
MSMCGLCE80A
MSMCGLCE90A
MSMCGLCE100A
MSMCGLCE110A
MSMCGLCE120A
MSMCGLCE130A
MSMCGLCE150A
MSMCGLCE160A
MSMCGLCE170A
J-Bend
MSMCJLCE6.5A
MSMCJLCE7.0A
MSMCJLCE7.5A
MSMCJLCE8.0A
MSMCJLCE8.5A
MSMCJLCE9.0A
MSMCJLCE10A
MSMCJLCE11A
MSMCJLCE12A
MSMCJLCE13A
MSMCJLCE14A
MSMCJLCE15A
MSMCJLCE16A
MSMCJLCE17A
MSMCJLCE18A
MSMCJLCE20A
MSMCJLCE22A
MSMCJLCE24A
MSMCJLCE26A
MSMCJLCE28A
MSMCJLCE30A
MSMCJLCE33A
MSMCJLCE36A
MSMCJLCE40A
MSMCJLCE43A
MSMCJLCE45A
MSMCJLCE48A
MSMCJLCE51A
MSMCJLCE54A
MSMCJLCE58A
MSMCJLCE60A
MSMCJLCE64A
MSMCJLCE70A
MSMCJLCE75A
MSMCJLCE80A
MSMCJLCE90A
MSMCJLCE100A
MSMCJLCE110A
MSMCJLCE120A
MSMCJLCE130A
MSMCJLCE150A
MSMCJLCE160A
MSMCJLCE170A
Volts
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
80
90
100
110
120
130
150
160
170
MIN
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
88.7
100
111
122
133
144
167
178
189
MAX
7.98
8.60
10.2
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
85.0
92.1
98.0
111
123
135
147
159
185
197
209
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
100
100
100
100
100
97
88
82
75
70
65
61
57
54
51
46
42
39
36
33
31
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.6
10.3
9.3
8.4
7.8
7.2
6.2
5.8
5.4
pF
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
90
90
90
90
90
90
90
90
90
90
90
90
90
NOTE 1:
TVS are normally selected according to the reverse standoff voltage” (V
WM
) which should be equal to or greater than the dc or peak operating
voltage level.
RF01002, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 3 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
GRAPHS
(P
PP
) – Peak Pulse Power - kW
tp – Pulse Time – sec
FIGURE 1
Peak Pulse Power vs. Pulse Time
Test wave form
parameters
tr = 10
µsec.
tp = 1000
µsec.
Peak Pulse Power (P
PP
) or continuous
o
Power in Percent of 25 C Rating
I
PP
– Peak Pulse Current - % I
PP
t – Time (msec)
T
L
Lead Temperature C
o
FIGURE 2
Pulse Waveform
FIGURE 3
Derating Curve
RF01002, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 4 of 7
MSMCGLCE6.5A – MXLSMCGLCE170Ae3,
MSMCJLCE6.5A – MXLSMCJLCE170Ae3
APPLICATION SCHEMATICS
The TVS low capacitance device configuration is shown in figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 5. In applications where
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and
also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher
reverse voltage rating than the TVS clamping voltage V
C
. The Microsemi recommended rectifier part number for the application in
figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS
devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each
rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in figure 5 and 6 will both result in
twice the capacitance of figure 4.
FIGURE 4
TVS with internal low
capacitance rectifier diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 6
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
RF01002, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 5 of 7
能源基础设施
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
