MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19120/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
•
CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16%
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency, High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
•
S–Parameter Characterization at High Bias Levels
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF19120
MRF19120S
1990 MHz, 120 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF19120
CASE 375E–03, STYLE 1
NI–1230S
MRF19120S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
389
2.22
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.45
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF19120 MRF19120S
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
µAdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
µA)
Gate Quiescent Voltage
(V
DS
= 26 V, I
D
= 500 mA)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 2 A)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
G
ps
500 mA,
MRF19120
MRF19120S
η
500 mA,
IMD
500 mA,
MRF19120
MRF19120S
IRL
500 mA,
G
ps
500 mA,
η
500 mA,
IMD
500 mA,
IRL
500 mA,
P1dB
G
ps
500 mA,
—
—
120
11
—
—
Watts
dB
—
–14
—
dB
—
–31
—
dB
—
34
—
%
—
11.7
—
dB
—
—
—
–31
–31
–12
–28
–27
–9
dB
dB
10.7
10.5
30
11.7
11.7
34
—
—
—
%
dB
C
rss
—
2.8
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2.5
3
—
4.8
3
3.9
0.38
—
3.8
5
0.5
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, CW, I
DQ
= 2
500 mA, f1 = 1990.0 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2
f1 = 1990.0 MHz)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
MRF19120 MRF19120S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS —
continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) (continued)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2
f1 = 1990.0 MHz)
η
500 mA,
Ψ
—
45
—
%
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2
500 mA,
f = 1990 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push–pull configuration.
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
MRF19120 MRF19120S
3
V
DD
+
C31
+
C30
C28
+
C17
C16
+
C15
R1
Z6
Z1
COAX1
Z2
COAX2
L1
Z5
C1
Z7
Z9
R2
C2
Z11
L2
Z13 C4 Z15 Z17 Z19
R6
Z8
Z10
R5
Z12 C3 Z14 Z16 Z18
Z20 Z22
DUT
C13
C7
Z24
Z26
L3
Z28
Z30 Z32 Z34 C9 Z36
C14
C29
C27
C12
Z40
Z41
Z42
C32
C33
C34
+
C35
+
+
V
GG
+
C19
B1
R3
RF
OUTPUT
Z4
RF
INPUT
Z38
C8
COAX3
C11
COAX4
Z25
Z27
Z29
Z31 Z33 Z35 C10 Z37
Z39
C5
Z21 Z23
C6
+
V
GG
+
C25
R4
C24
C23
C21
B2
C22
C20
C37
+
C39
L4
+
C36
C38
V
DD
+
+
+
C43
C44
+
C40
C41
C42
B1, B2
C1, C2
C3, C4, C9, C10
C5, C12
C6, C7
C8
C11
C13, C20, C29, C37
C14, C21, C28, C38
C15, C22, C31, C40
C16, C23, C33, C43
C17, C24, C32, C41
C19, C25
C27, C34, C36, C42
C30, C39
C35, C44
Coax1, Coax2
Coax3, Coax4
L1
L2
L3, L4
R1, R2
R3, R4
R5, R6
Z1
Ferrite Beads, Fair Rite
0.6 – 4.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC
0.4 – 2.5 pF Variable Capacitors, Johanson Gigatrim
2.0 pF Chip Capacitors, B Case, ATC
1.1 pF Chip Capacitor, B Case, ATC
0.1 pF Chip Capacitor, B Case, ATC
5.1 pF Chip Capacitors, B Case, ATC
91 pF Chip Capacitors, B Case, ATC
100
µF,
50 V Electrolytic Capacitors, Sprague
0.039
µF
Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
0.020
µF
Chip Capacitors, B Case, ATC
22
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet
1.0
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet
470
µF,
63 V Electrolytic Capacitors, Sprague
25
Ω,
Semi Rigid Coax, 70 mil OD, 1.05″ Long
50
Ω,
Semi Rigid Coax, 85 mil OD, 1.05″ Long
5.0 nH, Minispring Inductor, Coilcraft
8.0 nH, Minispring Inductor, Coilcraft
5.60 nH, Microspring Inductors, Coilcraft
1 kΩ, 1/2 W Fixed Metal Film Resistors, Dale
270
Ω,
1/8 W Fixed Film Chip Resistors, Dale
1.0 kΩ, 1/8 W Fixed Film Chip Resistors, Dale
0.150″ x 0.080″ Microstrip
Z2
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40
Z41
Z42
Board Material
Connectors
0.320″ x 0.080″ Microstrip
1.050″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.610″ x 0.080″ Microstrip
0.135″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.300″ x 0.350″ Microstrip
0.150″ x 0.500″ Microstrip
0.075″ x 0.500″ Microstrip
0.330″ x 0.500″ Microstrip
0.100″ x 0.550″ Microstrip
0.175″ x 0.550″ Microstrip
0.045″ x 0.550″ Microstrip
0.190″ x 0.325″ Microstrip
0.080″ x 0.325″ Microstrip
0.515″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.565″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.470″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.03″ Teflon
,
ε
r
= 2.55 Copper
Clad, 2 oz. Cu
N–Type Panel Mount, Stripline
Figure 1. 1.93 – 1.99 GHz Broadband Test Circuit Schematic
MRF19120 MRF19120S
4
MOTOROLA RF DEVICE DATA
C34
C35
+
V DD
C19
VGG
C17
B1
R3
R1
C1 C2
L2
L1
R2
R4
B2
+ C24
VGG
C25
C22
C23
C4
R6
C6
C21
C20
C36
C37
C39
C38 +
C40
C3
C5
C8
C16
+
C14
C7
L3
C15
C13
C30
C29
C31
C28 +
C32 C33
C27
R5
C9
C11
C10
L4
C12
C41 C43
+
V DD
MRF19120
C42
C44
Figure 2. MRF19120 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF19120 MRF19120S
5
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