Rev. C09-09
AnaSem
VDD
系列
概述
VDD系列乃用于½电压范围的½功耗，高检测精度的内½延迟电路电压
检测器.
VDD系列达成的检测精度是以集成电路内以温度系数调整的高准
确率参考电压值来½基准。本集成电路采用最新的CMOS生产技术和激
光微调技术，与精锐的生产监控。因为内½有延迟电路，延迟检测时间
不需配合外围元件便可以原厂设定之延迟时间范围来选择。
产品规格书
安纳森半导½
½电压, ½功耗,
±1%
高精度电压检测内½延迟电路
CMOS
电压检测器
无卤素
RoHS
符合标准
特点
1.8V~6.0V (selectable with a step of 0.1V)
检测电压范围
··································································
0.7V~6.0V
工½电压范围
··································································
高精度电压检测
····················································· ±1% (V
DET
=1.8V~6.0V)
Typ. ±20ppm/°C (V
DET
=1.8V~6.0V)
电压检测温度特征
··································································
S/10~50ms, M/50~200ms, L/80~400ms
延迟时间选择
·························································································
CMOS or N-channel open drain
输出类别
·························································································
½功耗
·································································· Typ. 0.6µA (V
IN
=1.5V)
–40°C
工½温度范围
·································································· ~ +85°C
SOT-23 (400mW), SON-4 (400mW)
小型封装
·························································································
应用范围
微型处理器的从设程序
各类系统的开动从设
电池充电检测
各类系统备用电源，电池开关控制
电池寿½检测
延迟电路设计
1
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