New Product
UH20FCT& UHB20FCT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Recovery Rectifier
FEATURES
• Oxide planar chip junction
TO-220AB
TO-263AB
K
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
2
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
UH20FCT
PIN 1
PIN 3
PIN 2
CASE
3
UHB20FCT
PIN 1
PIN 2
1
1
K
HEATSINK
• Solder dip 260 °C, 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency power factor correctors,
switching mode power supplies, freewheeling diodes
and secondary dc-to-dc rectification application.
MECHANICAL DATA
Case:
TO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
10 A x 2
300 V
180 A
25 ns
0.83 V
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current (see Fig.1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
UH20FCT
300
20
10
180
- 55 to + 175
UHB20FCT
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5.0 A
I
F
= 5.0 A
I
F
= 10 A
I
F
= 10 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
TYP.
0.96
0.77
V
F
1.0
0.83
MAX.
-
-
V
1.2
0.90
UNIT
Maximum instantaneous forward voltage
per diode
(1)
Document Number: 88964
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
UH20FCT& UHB20FCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum reverse current per diode
(2)
Maximum reverse recovery time
Maximum reverse recovery time per diode
Typical softness factor (tb/ta)
Typical reverse recovery current
Typical stored charge
Typical forward recovery time per diode
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤
40 ms
TEST CONDITIONS
V
R
= 300 V
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
I
R
t
rr
t
rr
S
I
RM
Q
rr
t
fr
TYP.
0.5
25
20
28
0.36
7.0
160
150
MAX.
5
150
25
35
-
-
-
-
UNIT
µA
ns
ns
-
A
nC
ns
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
I
F
= 1.0 A, dI/dt = 50 A/µs,
V
R
= 30 V, I
rr
= 0.1 I
RM
I
F
= 10 A, dI/dt = 200 A/µs,
V
R
= 200 V, T
J
= 125 °C
per diode
I
F
= 10 A, dI/dt = 80 A/µs,
V
FR
= 1.1 x V
F max.
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
UH20FCT
2.0
UHB20FCT
2.0
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UH20FCT-E3/4W
UHB20FCT-E3/4W
UHB20FCT-E3/8W
UNIT WEIGHT (g)
1.88
1.38
1.38
PACKAGE CODE
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
24
12
11
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
D = 0.8
Average Forward Rectified Current (A)
Average Power Loss (W)
20
10
9
8
7
6
5
4
3
2
1
16
12
8
T
4
D = t
p
/T
0
2
4
6
8
t
p
10
12
0
0
25
50
75
100
125
150
175
0
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88964
Revision: 13-May-08
New Product
UH20FCT& UHB20FCT
Vishay General Semiconductor
200
1000
T
J
= T
J
Max.
10 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
180
160
140
120
100
80
60
40
20
1
Instantaneous Reverse Current (µA)
100
T
J
= 175 °C
T
J
= 125 °C
10
1
0.1
T
J
= 25 °C
0.01
0.001
10
100
10
20
30
40
50
60
70
80
90
100
Number
of Cycles
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 5. Typical Reverse Leakage Characteristics Per Diode
100
1000
Instantaneous Forward Current (A)
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 25 °C
1
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
10
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88964
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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New Product
UH20FCT& UHB20FCT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88964
Revision: 13-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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