UFL120FA60P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
R
I
F(AV)
per module at T
C
= 80 °C
t
rr
600 V
120 A
96 ns
DESCRIPTION
The UFL120FA60P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping life
time control, provide an ultrasoft recovery current shape,
together with the best overall performance, ruggedness,
and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be a predominant portion of the total energy, such as in
the output rectification stage of welding machines, SMPS,
and dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 85 °C
T
C
= 25 °C
T
C
= 85 °C
Any terminal to case, t = 1 min
TEST CONDITIONS
MAX.
600
69
750
180
2500
- 55 to 175
UNITS
V
A
W
V
°C
Document Number: 94568
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
UFL120FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 60 A
Forward voltage
V
FM
I
F
= 120 A
I
F
= 60 A
I
F
= 120 A
Reverse leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 600 V
T
J
= 125 °C
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.29
1.49
1.13
1.37
0.1
0.2
80
MAX.
-
1.60
1.88
1.35
1.68
100
1.0
-
μA
mA
pF
V
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
96
190
7
17
340
1581
MAX.
141
246
13
25
917
3075
UNITS
ns
Peak recovery current
A
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
TEST CONDITIONS
MIN.
-
R
thJC
-
R
thCS
Flat, greased surface
-
-
-
-
0.05
30
1.3
0.5
-
-
-
g
N·m
TYP.
-
MAX.
1.0
°C/W
UNITS
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94568
Revision: 22-Jul-10
UFL120FA60P
Insulated Ultrafast
Rectifier Module, 120 A
1000
175°C
Vishay Semiconductors
1000
Reverse Current - I
R
(μA)
100
10
1
0.1
25°C
125°C
Instantaneous Forward Current - I
F
(A)
100
0.01
0.001
100
200
300
400
500
600
Tj = 175°C
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
2.0
2.5
100
Tj = 25°C
1
0.0
0.5
1.0
1.5
10
10
100
1000
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
10
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94568
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
UFL120FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
250
Vr = 200V
200
Allowable Case Temperature (°C)
200
150
If = 50A, 125°C
100
DC
t
rr
(ns)
150
50
Square wave (D=0.50)
80% rated Vr applied
If = 50A, 25°C
100
see note 1
0
0
20
40
60
80
100
120
Average Forward Current - I
F(AV)
(A)
50
100
1000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
dI
F
/dt (A/μs )
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
3000
Vr = 200V
120
2500
Average Power Loss ( W )
100
DC
RMS Limit
60
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
2000
If = 50A, 125°C
80
Q
rr
(nC)
1500
40
1000
If = 50A, 25°C
500
20
0
0
30
60
90
0
10 0
1 000
Average Forward Current - I
F(AV)
(A)
dI
F
/dt (A/μs )
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94568
Revision: 22-Jul-10
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