UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
V
R
I
F(AV)
at T
C
= 65 °C
t
rr
400 V
120 A
35 ns
The UFB120FA40P insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure
of the diodes, and the platinum doping life time control,
provide a ultrasoft recovery current shape, together with
the best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 65 °C
T
C
= 25 °C
T
C
= 90 °C
Any terminal to case, t = 1 minute
TEST CONDITIONS
MAX.
400
60
800
96
2500
- 55 to 150 °C
UNITS
V
A
W
V
°C
Document Number: 94086
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
V
BR
V
FM
I
RM
C
T
I
R
= 100 μA
I
F
= 60 A
I
F
= 60 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
TEST CONDITIONS
MIN.
400
-
-
-
-
-
TYP.
-
1.16
0.96
-
-
67
MAX.
-
1.37
1.13
0.1
1
-
mA
pF
V
UNITS
Reverse leakage current
Junction capacitance
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
30
65
128
7.4
17.8
240
1139
MAX.
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single diode conducting
Junction to case, both diodes conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
TYP.
0.99
0.49
0.05
30
1.3
MAX.
1.24
0.62
-
-
-
g
Nm
°C/W
UNITS
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94086
Revision: 21-Jul-10
UFB120FA40P
Insulated Ultrafast
Rectifier Module, 120 A
I
F
- Instantaneous Forward Current (A)
1000
100
T
J
= 150 °C
Vishay Semiconductors
I
R
- Reverse Current (µA)
10
T
J
= 125 °C
100
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
T
J
= 25 °C
0.01
1
0
0.5
1.0
1.5
2.0
0.001
0
100
200
300
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
0.01
0.0001
.
10
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
(Per Diode)
Document Number: 94086
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
UFB120FA40P
Vishay Semiconductors
160
Insulated Ultrafast
Rectifier Module, 120 A
160
150
V
RR
= 200 V
I
F
= 50 A
Allowable Case Temperature (°C)
140
120
DC
Square wave (D = 0.50)
80 % rated V
R
applied
140
130
120
t
rr
(ns)
100
80
60
40
20
0
10
20
30
40
T
J
= 125 °C
T
J
= 25 °C
110
100
90
80
70
See note (1)
50
60
70
60
50
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Avarage Forward Current (Per Diode)
70
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
3050
2550
2050
T
J
= 125 °C
T
J
= 25 °C
V
RR
= 200 V
I
F
= 50 A
Average Power Loss (W)
60
50
RMS limit
40
30
20
10
DC
0
0
10
20
30
40
50
60
70
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(nC)
1550
1050
550
50
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss (Per Diode)
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94086
Revision: 21-Jul-10
UFB120FA40P
Insulated Ultrafast
Rectifier Module, 120 A
V
R
= 200 V
Vishay Semiconductors
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94086
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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