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SMDA03C-4: 产品描述300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE; 产品类别分立半导体二极管; 文件大小103KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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SMDA03C-4概述

300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

SMDA03C-4规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Microsemi
零件包装代码	SOD
包装说明	PLASTIC, SO-8
针数	8
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE
最小击穿电压	4 V
配置	COMMON BIPOLAR TERMINAL, 4 ELEMENTS
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	R-PDSO-G8
JESD-609代码	e0
最大非重复峰值反向功率耗散	300 W
元件数量	4
端子数量	8
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性	BIDIRECTIONAL
认证状态	Not Qualified
最大重复峰值反向电压	3.3 V
表面贴装	YES
技术	AVALANCHE
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED

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8700 E. Thomas Road

Scottsdale, AZ 85251

Tel: (480) 941-6300

Fax: (480) 947-1503

SMDA03C-4

thru

SMDA24C-4

TVSarray™ Series

™

DESCRIPTION (300 watt)

This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in

an SO-8 configuration giving protection to 4 Bidirectional data or

interface lines. It is designed for use in applications where protection is

required at the board level from voltage transients caused by

electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical

fast transients (EFT) per IEC 1000-4-4 and effects of secondary

lighting.

These TVS arrays have a peak power rating of 300 watts for an 8/20

µsec

pulse. This array is suitable for

protection of sensitive circuitry consisting of TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC

microprocessors, and I/O transceivers. The SMDAXXC-4 product provides board level protection from

static electricity and other induced voltage surges that can damage sensitive circuitry.

FEATURES

•

Protects up to 4 Bidirectional lines

Surge protection Per IEC 1000-4-2, 1000-4-4

SO-8 Packaging

MECHANICAL

•

Molded SO-8 Surface Mount

Weight: 0.066 grams (approximate)

Marking: Logo, device number, date code

Pin #1 defined by DOT on top of package

MAXIMUM RATINGS

•

Operating Temperatures: -55 C to +150 C

Storage Temperature: -55

C to +150

Peak Pulse Power: 300 Watts (8/20

µsec,

Figure 1)

Pulse Repetition Rate: <.01%

PACKAGING

•

Tape & Reel EIA Standard 481-1-A

13 inch reel 2,500 (OPTIONAL)

Carrier tubes 95 pcs per (STANDARD)

ELECTRICAL CHARACTERISTICS PER LINE @ 25

C Unless otherwise specified

STAND

OFF

VOLTAG

VOLTS

MAX

SMDA03C-4

SMDA05C-4

SMDA12C-4

SMDA15C-4

SMDA24C-4

REA

REB

REC

RED

REE

3.3

5.0

12.0

15.0

24.0

BREAKDOWN

VOLTAGE

@1 mA

VOLTS

MIN

6.0

13.3

16.7

26.7

CLAMPING

VOLTAGE

@ 1 Amp

(FIGURE 2)

VOLTS

MAX

7.0

9.8

19.0

24.0

43.0

CLAMPING

VOLTAGE

@ 5 Amp

(FIGURE 2)

VOLTS

MAX

9.0

LEAKAGE

CURRENT

@ V

µA

MAX

200

400

CAPACITANCE

(f=1 MHz)

@0V

TYP

300

200

185

140

TEMPERATURE

COEFFICIENT

OF V

VBR

mV/°C

MAX

-5

PART

NUMBER

DEVICE

MARKING

NOTE:

TVS product is normally selected based on its stand off Voltage V

. Product selected voltage should be

equal to or greater than the continuous peak operating voltage of the circuit to be protected.

Application:

The SMDAXXC-4 product is designed for transient voltage suppression protection of ESD sensitive

components at the board level. It is an ideal product to be used for protection of I/O Transceivers.

MSC0886.PDF

ISO 9001 CERTIFIED

REV J 7/06/2000

SMDA03C-4相似产品对比

	SMDA03C-4	SMDA24C-4	SMDA15C-4	SMDA12C-4	SMDA05C-4
描述	300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE	BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MS-012AA	BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MS-012AA	BIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, MS-012AA	300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
是否无铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合
厂商名称	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
零件包装代码	SOD	SOD	SOD	SOD	SOD
包装说明	PLASTIC, SO-8	PLASTIC, SO-8	PLASTIC, SO-8	PLASTIC, SO-8	PLASTIC, SO-8
针数	8	8	8	8	8
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE	COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE	COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE	COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE	COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE
最小击穿电压	4 V	26.7 V	16.7 V	13.3 V	6 V
配置	COMMON BIPOLAR TERMINAL, 4 ELEMENTS	COMMON BIPOLAR TERMINAL, 4 ELEMENTS	COMMON BIPOLAR TERMINAL, 4 ELEMENTS	COMMON BIPOLAR TERMINAL, 4 ELEMENTS	COMMON BIPOLAR TERMINAL, 4 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
JESD-609代码	e0	e0	e0	e0	e0
最大非重复峰值反向功率耗散	300 W	300 W	300 W	300 W	300 W
元件数量	4	4	4	4	4
端子数量	8	8	8	8	8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	3.3 V	24 V	15 V	12 V	5 V
表面贴装	YES	YES	YES	YES	YES
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大钳位电压	-	-	24 V	19 V	9.8 V

SMDA03C-4

SMDA03C-4概述

SMDA03C-4规格参数

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