Tyco / Electronics
Raychem Circuit Protection
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
Fax: 800-227-4866
PRODUCT : TVA270SA
SiBar
TM
Thyristor Surge Protectors
DOCUMENT: SCD 24788
PCN: 854604
REV LETTER: F
REV DATE: AUGUST 23, 2004
PAGE NO.: 1 OF 2
Specification Status: Released
PHYSICAL DESCRIPTION
Marking:
REAB
Date Code
Device Code
Raychem Logo
A
B
MIN
1.91
(0.075)
C
D**
H
J
K
MIN
MAX
MIN
MAX
mm:
4.06
4.57
2.29
2.92
in*: (0.160) (0.180) (0.090) (0.115)
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
2.40
1.27
1.63
0.05
0.15
0.15
0.41
0.76
1.52
(0.095) (0.050) (0.064) (0.002) (0.006) (0.006) (0.016) (0.030) (0.060)
P
S
REF
MIN
MAX
mm:
0.51
4.83
5.59
in*: (0.020) (0.190) (0.220)
*Rounded off approximation
** D DIMENSION SHALL BE MEASURED WITHIN DIMENSION
Other Physical Characteristics
Form Factor:
Lead Material:
Encapsulation Material:
Solderability:
Solder Heat Withstand:
Solvent Resistance:
Mechanical Shock:
Vibration:
SMA (Surface Mount, JEDEC DO-214AC Package)
Tin/lead finish
Epoxy, meets UL94 V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
per MIL-STD-750, Method 2056
Agency Recognition:
Precedence:
CAUTION:
UL
This specification takes precedence over documents referenced herein.
Operation beyond the rated voltage or current may result in rupture, electrical arcing or flame.
Materials Information
ELV Compliant
© 2004 Tyco Electronics Corporation. All rights reserved.
Tyco / Electronics
Raychem Circuit Protection
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
Fax: 800-227-4866
PRODUCT : TVA270SA
SiBar
TM
Thyristor Surge Protectors
DOCUMENT: SCD 24788
PCN: 854604
REV LETTER: F
REV DATE: AUGUST 23, 2004
PAGE NO.: 2 OF 2
DEVICE RATINGS @ 25º C (Both Polarities)
Parameter
Off-State Voltage, Maximum at
ID
= 5 µA
Non-Repetitive Peak
Telcordia GR-1089 CORE 10x1000 µs
Impulse Current
TIA-968 lightning Type A Metallic 10/560 µs
Double exponential
TIA-968 lightning Type A Longit. 10/160 µs
Waveform
Telcordia GR-1089 Intrabuilding 2/10 µs
(Notes 1 and 2)
IEC61000-4-5 (Voc 1.2/50us) 8/20 µs
ITU-T K.20/K.21 (Voc 10/700us) 5/310 µs
TIA-968 lightning Type B (Voc 9/720us) 5/320 µs
Critical Rate of Rise of On-State Current
Powered Pulse Amplifier,
C=30uF, V=600V
Maximum 2x10 µsec waveform,
V
OC
=750v,
I
SC
=150A peak
DEVICE THERMAL RATINGS
Storage Temperature Range
Operating Temperature Range
Blocking or conducting state
Overload Junction Temperature
Maximum; Conducting state only
Maximum Lead Temperature for Soldering Purpose; for 10 seconds
Symbol
VDM
IPP
1
IPP
2
IPP
3
IPP
4
IPP
5
IPP
6
IPP
7
di/dt
di/dt
Value
270
50
70
100
150
150
90
90
500
110
Units
V
A
A
A
A
A
A
A
A/µs
A/µs
TSTG
TA
TJ
TL
-55 to 150
-40 to 125
+150
+260
ºC
ºC
ºC
ºC
ELECTRICAL CHARACTERISTICS Both polarities (T
J
@ 25ºC unless otherwise noted
)
Characteristics
Symbol
Min
----
Breakover Voltage
(+25ºC)
VBO
(dv/dt = 0.4kV/µs, I
sc
=900mA, V
DC
= 500V (both polarities))
Breakover Voltage Temperature Coefficient
----
dVBO/dTJ
----
Off-State Current
(VD1= 50V)
ID1
----
(VD2=
VDM)
ID2=IDM
----
On-State Voltage
(IT=1A)
VT
(PW
≤
300 µsec, Duty Cycle
≤
2% (Note 2))
Breakover Current
----
IBO
Holding Current (Note 2)
150
IH
22
Peak Onstage Surge Current
ITSM
(Measured @ 60Hz, 1 cycle, 600V)
2000
Critical Rate of Rise of Off-State Voltage
dv/dt
(Linear waveform,
V
D
= 0.8 X Rated
V
BO
,
TJ=
+25ºC)
Capacitance
(f=1.0 MHz, 50Vdc bias, 1 Vrms)
----
C1
(f=1.0 MHz, 2Vdc bias,15mVrms)
----
C2
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
Typ
310
0.1
-----
-----
-----
----
----
----
----
22
33
Max
365
-----
2.0
5.0
3.0
800
---
----
---
---
---
Units
V
%/ºC
µA
µA
V
mA
mA
A
V/µs
pF
pF
VOLTAGE-CURRENT CHARACTERISTIC
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