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SMDA24C-7

产品描述300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA
产品类别分立半导体    二极管   
文件大小94KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

SMDA24C-7概述

300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA

SMDA24C-7规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码SOD
包装说明R-PDSO-G8
针数8
Reach Compliance Codecompli
ECCN代码EAR99
其他特性COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE
最小击穿电压26.7 V
最大钳位电压43 V
配置COMMON BIPOLAR TERMINAL, 7 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G8
JESD-609代码e0
最大非重复峰值反向功率耗散300 W
元件数量7
端子数量8
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压24 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
SMDA03C-7
thru
SMDA24C-7
TVSarray™ Series
DESCRIPTION (300 watt)
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged
in an SO-8 configuration giving protection to 7 Bidirectional data or
interface lines. It is designed for use in applications where protection
is required at the board level from voltage transients caused by
electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical
fast transients (EFT) per IEC 1000-4-4 and effects of secondary
lighting.
These TVS arrays have a peak power rating of 300 watts for an
8/20µsec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, and I/O transceivers. The SMDAXXC-7 product
provides board level protection from static electricity and other induced voltage surges that can damage
sensitive circuitry.
FEATURES
Protects up to 7 Bidirectional lines
Surge protection Per IEC 1000-4-2, IEC 1000-4-4
SO-8 Packaging
MECHANICAL
Molded SO-8 Surface Mount
Weight: 0.066 grams (approximate)
Marking: Logo, device number, date code
Pin #1 defined by DOT on top of package
MAXIMUM RATINGS
Operating Temperatures: -55 C to +150 C
Storage Temperature: -55
0
C to +150
0
C
Peak Pulse Power: 300 Watts (8/20
µsec,
Figure 1)
Pulse Repetition Rate: <.01%
0
0
PACKAGING
Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500, pieces (OPTIONAL)
Carrier tubes 95 pcs per (STANDARD)
ELECTRICAL CHARACTERISTICS PER LINE @ 25
0
C Unless otherwise specified
STAND
OFF
VOLTAGE
V
WM
VOLTS
MAX
SMDA03C-7
SMDA05C-7
SMDA12C-7
SMDA15C-7
SMDA24C-7
SDL7
SDB7
SDD7
SDF7
SDH7
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(FIGURE 2)
VOLTS
MAX
7
9.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(FIGURE 2)
VOLTS
MAX
9
11
24
30
55
LEAKAGE
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE
(f=1 MHz)
@0V
C
pF
TYP
300
200
75
70
35
TEMPERATURE
COEFFICIENT
OF V
BR
á
VBR
mV/°C
MAX
-5
1
8
11
28
PART
NUMBER
DEVICE
MARKING
NOTE:
TVS product is normally selected based on its stand off Voltage V
WM
. Product selected voltage
should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.
Application:
The SMDAXXC-7 product is designed for transient voltage suppression protection of ESD
sensitive components at the board level. It is an ideal product to be used for protection of I/O Transceivers.
MSC0888.PDF
ISO 9001 CERTIFIED
REV M 7/06/2000

SMDA24C-7相似产品对比

SMDA24C-7 SMDA15C-7 SMDA12C-7 SMDA05C-7 SMDA03C-7
描述 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
厂商名称 Microsemi Microsemi Microsemi Microsemi Microsemi
零件包装代码 SOD SOD SOD SOD SOD
包装说明 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
针数 8 8 8 8 8
Reach Compliance Code compli compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE
最小击穿电压 26.7 V 16.7 V 13.3 V 6 V 4.5 V
最大钳位电压 43 V 24 V 19 V 9.8 V 7 V
配置 COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e0 e0 e0 e0 e0
最大非重复峰值反向功率耗散 300 W 300 W 300 W 300 W 300 W
元件数量 7 7 7 7 7
端子数量 8 8 8 8 8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 24 V 15 V 12 V 5 V 3.3 V
表面贴装 YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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