TSUS520.
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Description
TSUS520. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and pho-
totransistors.
94
8389
Features
•
•
•
•
•
•
•
•
•
•
•
Low cost emitter
Low forward voltage
High radiant power and radiant intensity
e2
Suitable for DC and high pulse current
operation
Standard T-1¾ (∅ 5 mm) package
Angle of half intensity
ϕ
= ± 15°
Peak wavelength
λ
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control and free air transmission
systems with low forward voltage and low cost
requirements in combination with PIN photodiodes
or phototransistors.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5 sec, 2 mm from case
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
150
300
2.5
210
100
- 55 to + 100
- 55 to + 100
260
375
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81055
Rev. 2.0, 23-Feb-07
www.vishay.com
1
TSUS520.
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Temp. coefficient of V
F
Reverse current
Junction capacitance
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
Symbol
V
F
TK
VF
I
R
C
j
30
Min
Typ.
1.3
- 1.3
100
Max
1.7
Unit
V
mV/K
µA
pF
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Temp. coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temp. coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
Test condition
I
F
= 20 mA
Symbol
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
∅
Min
Typ.
- 0.8
± 15
950
50
0.2
800
400
800
400
3.8
Max
Unit
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Type Dedicated Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1.5 A, t
p
= 100 µs
Part
TSUS5200
TSUS5201
TSUS5202
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms
TSUS5200
TSUS5201
TSUS5202
I
F
= 1.5 A, t
p
= 100 µs
TSUS5200
TSUS5201
TSUS5202
Radiant power
I
F
= 100 mA, t
p
= 20 ms
TSUS5200
TSUS5201
TSUS5202
Symbol
V
F
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
10
15
20
95
120
170
Min
Typ.
2.2
2.2
2.2
20
25
30
180
230
280
13
14
15
Max
3.4
3.4
2.7
50
50
50
Unit
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
www.vishay.com
2
Document Number 81055
Rev. 2.0, 23-Feb-07
TSUS520.
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
250
10
4
10
3
10
2
10
1
10
0
10
-1
94 7996
P
V
- Power Dissipation (mW)
150
R
thJA
100
50
0
0
20
40
60
80
100
I
F
- Forward Current (mA)
200
0
1
2
3
4
94 7957
T
amb
- Ambient Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
200
V
Frel
- Relative Forward
Voltage
(V)
250
1.2
1.1
I
F
= 10 mA
1.0
0.9
I
F
- Forward Current (mA)
150
100
R
thJA
50
0
0
20
40
60
80
100
0.8
0.7
0
20
40
60
80
100
94 7988
T
amb
- Ambient Temperature (°C)
94 7990
T
amb
- Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
10
1
I
e
- Radiant Intensity (mW/sr)
1000
I
F
- Forward Current (A)
I
FSM
= 2.5 A ( Single Pulse )
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
100
TSUS 5202
TSUS5200
10
1
TSUS 5201
10
0
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94 7989
10
-1
10
0
10
1
t
p
- Pulse Duration (ms)
10
2
94 7991
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81055
Rev. 2.0, 23-Feb-07
www.vishay.com
3
TSUS520.
Vishay Semiconductors
0°
10°
20°
30°
Φ
- Radiant Power (mW)
e
TSUS 5202
100
TSUS5200
10
I
e rel
- Relative Radiant Intensity
1000
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
1
0.1
10
0
94 7992
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94 7995
0.6
0.4
0.2
0
0.2
0.4
0.6
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Intensity vs. Angular Displacement
1.6
1.2
I
e rel
;
Φ
e rel
I
F
= 20 mA
0.8
0.4
0
- 10 0 10
94 7993
50
100
140
T
amb
- Ambient Temperature (°C)
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
Φ
e rel
- Relative Radiant Power
1.0
0.75
0.5
0.25
I
F
= 100 mA
0
900
950
1000
94 7994
λ
-
Wavelength
(nm)
Figure 9. Relative Radiant Power vs. Wavelength
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4
Document Number 81055
Rev. 2.0, 23-Feb-07
TSUS520.
Vishay Semiconductors
Package Dimensions in mm
95 10916
Document Number 81055
Rev. 2.0, 23-Feb-07
www.vishay.com
5
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