TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength:
λ
p
= 950 nm
High reliability
Angle of half intensity:
ϕ
= ± 15°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
94
8390
in
DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
I
e
(mW/sr)
ϕ
(deg)
± 15
± 15
± 15
λ
P
(nm)
950
950
950
t
r
(ns)
800
800
800
TSUS5200
20
TSUS5201
25
TSUS5202
30
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS5200
TSUS5201
TSUS5202
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
150
300
2.5
170
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
Document Number: 81055
Rev. 2.2, 29-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
1
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
Infrared Emitting Diode, 950 nm,
GaAs
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70
80
90
100
21314
R
thJA
= 230 K/W
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
40
20
0
0
10
20 30 40
50 60 70
80
90 100
21313
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA
SYMBOL
V
F
TK
VF
I
R
C
j
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
30
- 0.8
± 15
950
50
0.2
800
400
800
400
3.8
MIN.
TYP.
1.3
- 1.3
100
MAX.
1.7
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81055
Rev. 2.2, 29-Jun-09
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
GaAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 1.5 A, t
p
= 100 µs
PART
TSUS5200
TSUS5201
TSUS5202
TSUS5200
I
F
= 100 mA, t
p
= 20 ms
Radiant intensity
I
F
= 1.5 A, t
p
= 100 µs
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
TSUS5200
Radiant power
I
F
= 100 mA, t
p
= 20 ms
TSUS5201
TSUS5202
Note
T
amb
= 25 °C, unless otherwise specified
SYMBOL
V
F
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
10
15
20
95
120
170
MIN.
TYP.
2.2
2.2
2.2
20
25
30
180
230
280
13
14
15
MAX.
3.4
3.4
2.7
50
50
50
UNIT
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
Vishay Semiconductors
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
1
I
F
- Forward Current (A)
1.2
V
F rel
- Relative Forward
Voltage
(V)
I
FSM
= 2.5 A ( Single Pulse )
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
1.1
I
F
= 10 mA
1.0
0.9
0.8
0.7
10
-1
10
0
10
1
10
2
94 7990
0
20
40
60
80
100
94 7989
t
p
- Pulse Duration (ms)
T
amb
- Ambient Temperature (°C)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
10
4
10
3
10
2
10
1
10
0
10
-1
94 7996
1000
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
100
TSUS 5202
TSUS5200
10
0
1
2
3
4
94 7991
1
10
0
TSUS 5201
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
V
F
- Forward
Voltage
(V)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 6 - Radiant Intensity vs. Forward Current
Document Number: 81055
Rev. 2.2, 29-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
3
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
1000
Φ
- Radiant Power (mW)
e
Φ
e rel
- Relative Radiant Power
TSUS 5202
100
TSUS5200
10
Infrared Emitting Diode, 950 nm,
GaAs
1.25
1.0
0.75
0.5
1
0.25
I
F
= 100 mA
0
900
950
λ
-
Wavelength
(nm)
1000
0.1
10
0
94 7992
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94 7994
Fig. 7 - Radiant Power vs. Forward Current
1.6
Fig. 9 - Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
1.2
I
e rel
;
Φ
e rel
I
F
= 20 mA
0.8
I
e rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.4
0
- 10 0 10
94 7993
50
100
140
94 7995
T
amb
- Ambient Temperature (°C)
0.6
0.4
0.2
0
0.2
0.4
0.6
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
Ø 5.8 ± 0.15
R 2.49 (sphere)
7.7 ± 0.15
12.5 ± 0.3
8.7
± 0.3
(4.7)
35.5 ± 0.55
< 0.7
Area not plane
1.1 ± 0.25
Ø 5 ± 0.15
1 min.
0.15
0.5 + 0.05
-
2.54 nom.
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
6.544-5258.02-4
Issue: 6; 19.05.09
95 10916
www.vishay.com
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81055
Rev. 2.2, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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