TSTS7100
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm):
∅
4.7
• Peak wavelength:
λ
p
= 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 5°
94
8483
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
DESCRIPTION
TSTS7100 is an infrared, 950 nm emitting diode in GaAs
technology in a hermetically sealed TO-18 package with
lens.
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
TSTS7100
I
e
(mW/sr)
> 10
ϕ
(deg)
±5
λ
P
(nm)
950
t
r
(ns)
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSTS7100
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
PACKAGE FORM
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Storage temperature range
Thermal resistance junction/ambient
Thermal resistance junction/case
Note
T
amb
= 25 °C, unless otherwise specified
leads not soldered
leads not soldered
T
case
≤
25 °C
t
p
/T = 0.5, t
p
≤
100 µs, T
case
≤
25 °C
t
p
≤
100 µs
T
case
≤
25 °C
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
VALUE
5
250
500
2.5
170
500
100
- 55 to + 100
450
150
UNIT
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
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260
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81047
Rev. 1.8, 04-Sep-08
TSTS7100
Infrared Emitting Diode, RoHS Compliant,
Vishay Semiconductors
950 nm, GaAs
600
P
V
- Power Dissipation (mW)
500
400
300
200
R
thJA
100
0
0
12790
300
I
F
- Forward Current (mA)
R
thJC
250
200
R
thJC
150
100
50
0
25
50
75
100
125
94
8018
R
thJA
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Breakdown voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Rise time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A, t
p
/T = 0.01, t
p
≤
10 µs
TEST CONDITION
I
F
= 100 mA, t
p
≤
20 ms
I
F
= 100 mA
I
R
= 100 µA
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
=
20 ms
I
F
= 100 mA, t
p
≤
20 ms
I
F
= 100 mA
SYMBOL
V
F
TK
VF
V
(BR)
C
j
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
t
r
t
r
d
10
7
- 0.8
±5
950
50
800
400
1.5
5
30
50
MIN.
TYP.
1.3
- 1.3
MAX.
1.7
UNIT
V
mV/K
V
pF
mW/sr
mW
%/K
deg
nm
nm
ns
ns
mm
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
1
10
4
10
3
10
2
10
1
10
0
10
-1
10
-1
10
0
10
1
10
2
94 7996
I
F
- Forward Current (A)
I
FSM
= 2.5 A (single pause)
t
p
/T= 0.01
10
0
0.05
0.1
0.2
0.5
10
-1
10
-2
I
F
- Forward Current (mA)
0
1
2
3
4
94
8003
t
p
- Pulse Duration (ms)
V
F
- Forward
Voltage
(V)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Document Number: 81047
Rev. 1.8, 04-Sep-08
Fig. 4 - Forward Current vs. Forward Voltage
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261
For technical questions, contact: emittertechsupport@vishay.com
TSTS7100
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
1.2
V
F rel
- Relative Forward
Voltage
(V)
1.1
I
F
= 10 mA
1.0
0.9
1.6
1.2
I
e rel
;
Φ
e rel
I
F
= 20 mA
0.8
0.8
0.7
0
20
40
60
80
100
0.4
0
- 10 0 10
94 7993
50
100
140
94 7990
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
I
e
- Radiant Intensity (mW/sr)
1.25
Φ
e rel
- Relative Radiant Power
100
1.0
0.75
0.5
10
1
t
p
/T = 0.01 , t
p
= 20
µs
0.1
10
0
10
1
10
2
10
3
10
4
0.25
I
F
= 100 mA
0
900
950
1000
94
8001
I
F
- Forward Current (mA)
94 7994
λ
-
Wavelength
(nm)
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
0°
10°
20°
30°
100
I
e rel
- Relative Radiant Intensity
1000
Φ
e
- Radiant Power (mW)
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
10
1
0.1
10
0
94 7977
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
94
8019
0.6
0.4
0.2
0
0.2
0.4
0.6
Fig. 7 - Radiant Power vs. Forward Current
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
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262
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81047
Rev. 1.8, 04-Sep-08
TSTS7100
Infrared Emitting Diode, RoHS Compliant,
Vishay Semiconductors
950 nm, GaAs
PACKAGE DIMENSIONS
in millimeters
A
C
4.7
+ 0.05
- 0.10
± 0.25
Chip position
(2.5)
6.5
0.45
+ 0.02
- 0.05
13.2
± 0.7
5.5
2.54 nom.
± 0.15
technical drawings
according to DIN
specifications
Lens
Drawing-No.: 6.503-5002.02-4
Issue: 1; 24.08.98
14486
3.9
± 0.05
Document Number: 81047
Rev. 1.8, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
263
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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