THYRISTOR
( Through Hole/Non-isolated)
SMG3D60C
0.70
±
0.20
( Sensitive Gate)
6.60
0.20
±
5.34
0.30
±
TC POINT
2
2
Thyristor
SMG3D60C
is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
Typical Applications
TO-251
2.30
0.10
±
0.50
0.10
±
Home Appliances : Electric Blankets, Starter for FL, other control applications
●
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater
Controls, other control applications
●
6.10
±
0.20
1.80
0.20
±
1
3
1.07
0.96
0.20
±
0.76
0.20
±
0.50
0.10
±
I
T(AV)
=3A
●
High Surge Current
●
Low Voltage Drop
●
Lead-Free Package
●
9.30
±
0.30
Features
2
1
2
3
2.30
0.20
±
2.30
0.20
±
1K
2A
3 Gate
Identifying Code：
S3D6C
Unit：
mm
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
I
T AV）
（
I
T RMS）
（
I
TSM
I
2
t
P
GM
（AV）
P
G
（Tj=25℃
unless otherwise specified）
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
（Forward）
Peak Gate Voltage
（Reverse）
Operating Junction Temperature
Storage Temperature
Mass
Reference
Ratings
600
720
600
Unit
V
V
V
A
A
A
A
2
S
W
W
A
V
V
℃
℃
g
Single phase, half wave, 180°conduction, Tc＝108℃
,
Single phase, half wave, 180°conduction, Tc＝108℃
,
50Hz/60Hz,
1 2
cycle Peak value, non-repetitive
／
3
4.7
50
/
55
12.5
0.5
0.1
0.3
6
6
−40∼＋125
−40∼＋150
0.39
I
FGM
V
FGM
V
RGM
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
（
Rth j-c
）
Item
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Reference
Tj＝125℃, V
D
＝V
DRM
, R
GK
＝220Ω
Tj＝125℃, V
R
＝V
RRM
, R
GK
＝220Ω
I
T
＝9A,
Inst. measurement
V
D
＝6V,
R
L
＝10Ω
Tj＝125℃, V
D
＝
1 2
V
DRM
, R
GK
＝220Ω
／
R
GK
＝220Ω
Junction to case
Ratings
Min.
Typ.
Max.
1
1
1.5
1
0.1
3.5
3.8
200
0.8
Unit
mA
mA
V
μA
V
V
mA
℃
/
W
SMG3D60C
１
０
Gate Characteristics
V
FGM
６
（ V）
P
GM
（0.5W）
100
On-State Voltage
（MAX）
Ｔ= ５
½２ ℃
Ｔ= ２ ℃
½１ ５
On-State Current A）
（
Gate Voltage
（V）
２℃
５
I
FGM
（0.3A）
１
P
G
（ .1W）
（AV）
０
０
１
０１
.
V
GD
０
（ .1V）
１
００
.１
００
.１
０１
.
１
１
０
１０
０
１０
００
０１
.
0.5
1
1.5
2
2.5
3
3.5
4
Gate Current mA）
（
On-State Voltage
（V）
4.5
Power Dissipation
（W）
θ＝150゜
θ＝120゜
θ
＝90゜
θ
＝60゜
θ
＝30゜
θ＝180゜
Allowable Case Temperature（℃）
Average On-State Current vs
（Single phase half wave）
Power Dissipation
5
4
3.5
3
2.5
2
1.5
1
0.5
０
０
０
.5
1
1.5
2
2.5
０
θ
３０
６゜
π
2π
130
125
120
115
110
105
Average On-State Current vs Allowable
Case Temperature
（Single phase half wave）
０
θ
３０
６゜
π
2π
θ Conduction Angle
：
θ
＝30゜
＝150゜
θ
＝60゜ θ
＝90゜ θ
＝120゜ θ
θ
＝180゜
θ Conduction Angle
：
3
3.5
100
０
0.5
1
1.5
2
2.5
3
3.5
Average On-State Current A）
（
Average On-State Current A）
（
50
40
60H
Z
30
50H
Z
20
10
０
１
Transient Thermal Impedance
（℃/W）
60
Surge On-State Current Rating
（Non-Repetitive）
１
０
Maximum Transient Thermal
Impedance Characteristics
Surge On-State Current A）
（
１
０
１0
０
１
００
.１
０１
.
１
１
０
１０
０
Time
（Cycles）
Time
（Sec.）
Gate Trigger Voltage
（V）
１０
００
I
GT
−Tj Change Rate
（Typical）
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
GT
−Tj
（Typical）
I
GT
（t℃）
×100
（％）
I
GT
２ ℃）
（５
１０
０
１
０
１
−０
５
−５
２
０
２
５
５
０
７
５
１０
０
１５
２
0
−０
５
−５
２
０
２
５
５
０
７
５
１０
０
１５
２
Junction Temp.（℃）
Junction Temp.
（℃）
NXP MCU
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