TSMF1000, TSMF1020, TSMF1030
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant,
890 nm, GaAlAs Double Hetero
FEATURES
TSMF1000
TSMF1020
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• Peak wavelength:
p
= 890 nm
• High radiant power
• Angle of half intensity:
= ± 17°
• Low forward voltage
• Suitable for high pulse current operation
16758-5
TSMF1030
• Versatile terminal configurations
• Package matches with detector TEMD1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
DESCRIPTION
TSMF1000 series are infrared, 890 nm emitting diodes in
GaAlAs double hetero (DH) technology with high radiant
power and high speed, molded in clear, untinted plastic
packages (with lens) for surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
COMPONENT
TSMF1000
TSMF1020
TSMF1030
I
e
(mW/sr)
5
5
5
(deg)
± 17
± 17
± 17
P
(nm)
890
890
890
t
r
(ns)
30
30
30
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSMF1000
TSMF1020
TSMF1030
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
Yoke
Rev. 1.8, 30-Jun-11
1
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81061
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSMF1000, TSMF1020, TSMF1030
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
½
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
t
5s
Soldered on PCB, pad dimensions:
4 mm x 4 mm
T
sd
R
thJA
VALUE
5
100
200
0.8
180
100
- 40 to + 85
- 40 to + 100
260
400
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
200
180
120
100
80
60
P
V
- Power Dissipation (mW)
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70 80
90 100
R
thJA
= 400 K/W
I
F
- Forward Current (mA)
160
R
thJA
= 400 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21165
T
amb
- Ambient Temperature (°C)
21166
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 20 mA
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA
I
F
= 100 mA, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
e
TK
e
p
TK
p
t
r
t
f
f
c
d
2.5
160
5
25
35
- 0.6
± 17
890
40
0.2
30
30
12
1.2
13
MIN.
TYP.
1.3
2.4
- 1.8
10
MAX.
1.5
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.8, 30-Jun-11
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81061
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSMF1000, TSMF1020, TSMF1030
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
10 000
t
p
/T = 0.005
T
amb
< 60 °C
1000
I
F
- Forward Current (mA)
1000
Φ
e
- Radiant Power (mW)
100
0.01
0.02
0.05
100
0.2
0.5
DC
10
0.1
100
10
1
1
0.01
95 9985
0.1
1
10
0.1
10
0
94 8007
t
p
- Pulse Length (ms)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
10
4
I
F
- Forward Current (mA)
1.6
10
3
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
10
2
10
1
0.4
10
0
0
94 8880
1
2
3
4
0
- 10 0 10
94 7993
50
100
140
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
1.25
I
e
- Radiant Intensity (mW/sr)
Φ
e rel
- Relative Radiant Power
1.0
100
0.75
10
0.5
1
0.25
0.1
10
0
16189
10
1
10
2
10
3
10
4
20082
0
800
900
1000
I
F
- Forward Current (mA)
λ
- Wavelength (nm)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
Rev. 1.8, 30-Jun-11
3
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81061
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSMF1000, TSMF1020, TSMF1030
www.vishay.com
Vishay Semiconductors
REFLOW SOLDER PROFILE
20°
30°
0°
10°
260
240
ϕ
- Angular Displacement
S
rel
- Relative Sensitivity
220
Temperature (°C)
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
200
180
160
140
120
100
80
60
0
+ 5 °C/s
- 5 °C/s
60 s to 120 s
5s
20 40 60 80 100 120 140 160 180 200 220
94 8248
17172
Time (s)
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile
PRECAUTIONS FOR USE
1. Over-current-proof
Customer must apply resistors for protection, otherwise
slight voltage shift will cause big current change (burn out
will happen).
2. Storage
• Storage temperature and rel. humidity conditions are:
5 °C to 35 °C, R.H. 60 %.
• Floor life must not exceed 168 h, acc. to JEDEC level 3,
J-STD-020.
Once the package is opened, the products should be
used within a week. Otherwise, they should be kept in a
damp proof box with desiccant.
Considering tape life, we suggest to use products within
one year from production date.
• If opened more than one week in an atmosphere 5 °C to
35 °C, R.H. 60 %, devices should be treated at 60 °C
± 5 °C for 15 h.
• If humidity indicator in the package shows pink color
(normal blue), then devices should be treated with the
same conditions as 2.3.
1 °C/s to 5 °C/s
Pre-heating
180 °C to 200 °C
260 °C max.
10 s max.
60 s max.
above 220 °C
120 s max.
1 °C/s to 5 °C/s
22566
Fig. 11 - Lead (Pb)-Free Reflow Solder Profile acc. J-STD-020
Rev. 1.8, 30-Jun-11
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81061
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSMF1000, TSMF1020, TSMF1030
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
TSMF1000
Vishay Semiconductors
16159
PACKAGE DIMENSIONS
in millimeters:
TSMF1020
3.8
± 0.2
Ø
1.9
± 0.2
0.85
0.15
± 0.05
0.3
2.5
± 0.2
2
± 0.2
1
± 0.1
1.1
0.5
0.4
4.5
± 0.1
2.3
± 0.1
0.75
1.4
2.7
± 0.2
C
A
16160
Rev. 1.8, 30-Jun-11
5
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81061
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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