TSDF54040X/TSDF54040XR
Vishay Semiconductors
Dual - MOSMIC®– two AGC Amplifiers for TV–Tuner
Prestage with 5 V Supply Voltage
MOSMIC
-
MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in
UHF-and VHF- tuner with 5 V supply voltage.
Typical Application
AGC
C
G2 (common)
Features
RFC
+5 V
D 3
C
RF out
2 (TSDF54040X)
5 (TSDF54040XR)
D
Two AGC amplifiers in a single package
D
Integrated gate protection diodes
D
Low noise figure
D
High gain, very high forward transadmittance
(40 mS typ.)
D
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range with less steep slope
D
SMD package, reverse pinning possible
16598
C
RF in
1 G1
AMP1
RFC
+5 V
C
RF in
6 G1
AMP2
D 4
C
RF out
S (common)
5 (TSDF54040X)
2 (TSDF54040XR)
6
5
4
6
5
4
TY
CW
1
WC4
2
3
16599
TY
CW
1
W4C
2
3
16600
TSDF54040X Marking: WC4
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
TSDF54040XR Marking: W4C
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate 2, 6 = Gate 1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
Document Number 85087
Rev. 1, 12–Nov–01
www.vishay.com
1 (4)
TSDF54040X/TSDF54040XR
Vishay Semiconductors
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Symbol
V
DS
I
D
±I
G1/G2SM
±V
G1/G2SM
P
tot
T
Ch
T
stg
Value
8
30
10
6
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
T
amb
60
°C
Maximum Thermal Resistance
T
amb
= 25°C,
unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35µm Cu
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Test Conditions
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
–V
G1S
= 5 V, V
G2S
= V
DS
= 0
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
Symbol
±V
(BR)G1SS
±V
(BR)G2SS
+I
G1SS
–I
G1SS
±I
G2SS
I
DSS
I
DSP
V
G2S(OFF)
50
10
0.8
Min.
7
7
Typ.
Max.
10
10
50
100
20
250
20
1.4
Unit
V
V
µA
µA
nA
µA
mA
V
Gate 2 - source
leakage current
Drain current
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
Self-biased
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
operating current
Gate 2 - source cut- V
DS
= 5 V, V
G1S
= nc, I
D
= 20
µA
off voltage
15
1.0
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2 (4)
Document Number 85087
Rev. 1, 12–Nov–01
TSDF54040X/TSDF54040XR
Vishay Semiconductors
Electrical AC Characteristics
V
DS
= 5 V, V
G2S
= 4 V, I
D
= I
DSP
, f = 1 MHz, T
amb
= 25°C, unless otherwise specified
Parameter
Test Conditions
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
AGC range
V
DS
= 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
Input level for k = 1 % @ 40 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
Symbol
y
21s
C
issg1
C
rss
C
oss
G
ps
G
ps
∆G
ps
F
F
X
mod
X
mod
Min.
35
Typ.
40
2.4
30
1.5
30
24
45
1
1.3
Max.
50
2.8
40
Unit
mS
pF
fF
pF
dB
dB
dB
dB
dB
dBµV
dBµV
18
90
100
105
Dimensions of TSDF54040X/TSDF54040XR in mm
14280
Document Number 85087
Rev. 1, 12–Nov–01
www.vishay.com
3 (4)
TSDF54040X/TSDF54040XR
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay
Semiconductors
products for any unintended or unauthorized application, the
buyer shall indemnify Vishay
Semiconductors
against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 85087
Rev. 1, 12–Nov–01
模拟与混合信号
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