Not for new design, this product will be obsoleted soon
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
12 GHz Silicon NPN Planar RF Transistor
2
1
Features
•
•
•
•
•
Low power applications
Very low noise figure
e3
High transition frequency f
T
= 12 GHz
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
4
2
SOT143
SOT143R
4
2
3
1
SOT343
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and associ-
ated gain performance at UHF, VHF and microwave
frequencies.
3
1
4
2
SOT343R
Mechanical Data
Typ:TSDF1205
Case:
SOT143 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ:
TSDF1205R
Case:
SOT143R Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
4
3
Electrostatic sensitive device.
Observe precautions for handling.
13629
Typ:
TDSF1205W
Case:
SOT343 Plastic case
Weight:
approx. 6.0 mg
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ:
TSDF1205RW
Case:
SOT343R Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Parts Table
Part
TSDF1205
TSDF1205R
TSDF1205RW
TSDF1205W
Ordering Code
TSDF1205-GS08
TSDF1205R-GS08
TSDF1205RW-GS08
TSDF1205W-GS08
F05
05F
W0F
WF0
Type Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Document Number 85065
Rev. 1.7, 08-Sep-08
www.vishay.com
1
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
132 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
4
2
12
40
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction to ambient air
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 µm Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test condition
V
CE
= 12 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 5 mA, I
B
= 0.5 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
50
4
0.1
120
0.5
250
Min
Typ.
Max
100
100
2
Unit
µA
nA
µA
V
V
DC forward current transfer ratio V
CE
= 2 V, I
C
= 2 mA
www.vishay.com
2
Document Number 85065
Rev. 1.7, 08-Sep-08
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Test condition
V
CE
= 2 V, I
C
= 5 mA, f = 1 GHz
V
CB
= 1 V, f = 1 MHz
V
CE
= 1 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 2 V, I
C
= 2 mA, Z
S
= Z
Sopt
,
Z
L
= 50
Ω,
f = 2 GHz
V
CE
= 2 V, I
C
= 2 mA, f = 2 GHz
(at F
opt
)
V
CE
= 2 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
Z
L
= 50
Ω
f = 2 GHz
Transducer gain
V
CE
= 2 V, I
C
= 5 mA, Z
0
= 50
Ω,
f = 2 GHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
G
pe
|S
21e
|
2
Min
Typ.
12
0.2
0.35
0.15
1.3
13
11.5
12.5
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
C
cb
- Collector Base Capacitance (pF)
100
P
tot
- Total Power Dissipation (mW)
80
60
40
20
0
0
14284
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
V
CB
- Collector Base
Voltage
(V)
20
40
60
80
100 120 140 160
14286
T
amb
- Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
16
f
T
- Transition Frequency (GHz)
14
12
10
8
6
4
2
0
0
14285
3.0
f =1 GHz
2.5
V
CE
= 3
V
F -
Noise
Figure (dB)
V
CE
= 2
V
f = 2 GHz
Z
S
= 50
Ω
2.0
1.5
1.0
0.5
0.0
V
CE
= 2
V
2
4
6
8
10
12
14
14287
0
1
2
3
4
5
6
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85065
Rev. 1.7, 08-Sep-08
www.vishay.com
3
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Package Dimensions in mm (Inches): SOT143
0.1 [0.004] max.
1.1 [0.043]
2.6 [0.102]
2.35 [0.093]
1.8 [0.071]
1.6 [0.063]
0.5 [0.020]
0.35 [0.014]
0.9 [0.035]
0.75 [0.030]
foot print recommendation:
3 [0.118]
2.8 [0.110]
0.5 [0.020]
0.35 [0.014]
0.5 [0.020]
0.35 [0.014]
0.15 [0.006]
0.08 [0.003]
1.7 [0.067]
0.9 [0.035] 0.9 [0.035]
0.8 [0.031]
1.2 [0.047]
1.4 [0.055]
1.2 [0.047]
0.9 [0.035]
0.8 [0.031]
2 [0.079]
2 [0.079]
1.8 [0.071]
0.8 [0.031]
1.9 [0.075]
96 12240
Package Dimensions in mm (Inches): SOT143R
96 12239
www.vishay.com
4
Document Number 85065
Rev. 1.7, 08-Sep-08
TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Package Dimensions in mm (Inches): SOT343
0.1 [0.004] max.
0.2 [0.008]
0.1 [0.004]
2.2 [0.087]
1.8 [0.071]
1 [0.039]
0.8 [0.031]
2 [0.079]
1.25 [0.049]
1.05 [0.041]
0.4 [0.016]
0.25 [0.010]
0.7 [0.028]
0.55 [0.022]
foot print recommendation:
0.4 [0.016]
0.25 [0.010]
0.4 [0.016]
0.25 [0.010]
0.15 [0.006] min.
2.2 [0.087]
1.15 [0.045]
0.09 [0.035]
0.6 [0.024]
1.35 [0.053]
1.15 [0.045]
1.6 [0.063]
1.4 [0.055]
1.2 [0.047]
96 12237
1.3 [0.051]
Package Dimensions in mm (Inches): SOT343R
96 12238
Document Number 85065
Rev. 1.7, 08-Sep-08
0.8 [0.031]
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
