SML50B26F
TO–247AD Package Outline.
Dimensions in mm (inches)
4.69
5.31
1.49
2.49
(0.185)
(0.209)
(0.059)
(0.098)
6.15
(0.242)
BSC
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER FREDFET
3.55 (0.140)
3.81 (0.150)
1
2
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
0.40 (0.016)
0.79 (0.031)
1.01 (0.040)
1.40 (0.055)
V
DSS
500V
26A
I
D(cont)
Ω
R
DS(on)
0.200Ω
•
•
•
•
•
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular TO–247 Package
Fast Recovery Body Diode
2.21 (0.087)
2.59 (0.102)
19.81 (0.780)
20.32 (0.800)
4.50
(0.177)
M ax.
5.25 (0.215)
BSC
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
500
26
104
±20
±30
300
2.4
–55 to 150
300
26
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 3.85mH, R
G
= 25Ω, Peak I
L
= 26A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
8/99
SML50B26F
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
26
0.20
Min.
500
Typ.
Max. Unit
V
25
250
±100
4
µA
nA
V
A
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
Min.
Typ.
3700
510
200
150
25
70
12
10
50
8
Max. Unit
4440
715
300
225
37
105
25
20
75
15
ns
nC
pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
dv / dt
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
≤
I
D
[cont]
Peak Diode Recovery
V
DD
≤
V
DSS
T
J
≤
150°C
t
rr
Q
rr
I
rrm
Reverse Recovery Time
I
S
= – I
D
[Cont.]
dI / dt = 100A/µs
I
S
= – I
D
[Cont.]
dl / dt = 100A/µs
I
S
= – I
D
[Cont.]
dl / dt = 100A/µs
dI / dt = 100A/µs
V
R
= 200V
R
G
= 2.0Ω
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
1.3
4.5
12
18
250
500
ns
µC
5
V/ns
Min.
Typ.
Max. Unit
26
A
104
1.3
V
Reverse Recovery Charge
Peak Recovery Current
A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
8/99
SML50B26F
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
0.42
°C/W
40
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
8/99
SML50B26F
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
8/99
SML50B26F
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
8/99
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