SML60S18
D
3
PAK Package Outline.
Dimensions in mm (inches)
4.98 (0.196)
5.08 (0.200)
1.47 (0.058)
1.57 (0.062)
15.95 (0.628)
16.05 (0.632)
13.41 (0.528)
13.51 (0.532)
1.04 (0.041)
1.15 (0.045)
13.79 (0.543)
13.99 (0.551)
0.46 (0.018)
0.56 (0.022)
3 plcs.
1.22 (0.048)
1.32 (0.052)
1.98 (0.078)
2.08 (0.082)
5.45 (0.215) BSC
2 plcs.
11.51 (0.453)
11.61 (0.457)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
2
3
1.27 (0.050)
1.40 (0.055)
3.81 (0.150)
4.06 (0.160)
2.67 (0.105)
2.84 (0.112)
V
DSS
I
D(cont)
R
DS(on)
Pin 3 – Source
600V
18A
Ω
0.35Ω
Pin 1 – Gate
Pin 2 – Drain
Heatsink is Drain.
•
•
•
•
Faster Switching
Lower Leakage
100% Avalanche Tested
Surface Mount D
3
PAK Package
D
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
G
S
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
600
18
72
±20
±30
280
2.24
–55 to 150
300
18
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 7.47mH, R
G
= 25Ω, Peak I
L
= 18A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
5/99
SML60S18
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
18
0.35
Min.
600
Typ.
Max. Unit
V
25
250
±100
4
µA
nA
V
A
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.6Ω
Min.
Typ.
3450
412
153
138
19
65
12
8
44
9
ns
nC
Max. Unit
pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/µs
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/µs
440
7
Min.
Typ.
Max. Unit
18
A
72
1.3
V
ns
µC
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Min.
Typ.
Max. Unit
0.45
°C/W
40
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
5/99
stm32/stm8
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