TN3012L
Vishay Siliconix
N-Channel 300-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
300
r
DS(on)
Max (W)
12 @ V
GS
= 10 V
20 @ V
GS
= 4.5 V
V
GS(th)
(V)
0.8 to 3
I
D
(A)
0.18
FEATURES
D
D
D
D
D
Low On-Resistance: 9
W
Secondary Breakdown Free: 320 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
BENEFITS
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
APPLICATIONS
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
S
1
Device Marking
Front View
“S” TN
3012L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
3
Top View
G
2
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
300
"20
0.18
0.14
0.5
0.8
0.32
156
–55 to 150
Unit
V
A
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
W
_C/W
_C
www.vishay.com
11-1
TN3012L
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 120 V, V
GS
= 0 V
T
A
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.18 A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.14 A
T
A
= 125_C
Forward Transconductance
b
Diode Forward Voltage
g
fs
V
SD
V
DS
= 15 V, I
D
= 0.1 A
I
S
= 0.18 A, V
GS
= 0 V
0.2
0.5
9
11
20
160
0.8
12
20
40
mS
V
W
300
0.8
320
2.1
3.0
"10
0.1
5
mA
m
A
V
nA
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
^100
mA
3300
38
1600
40
8
3
pF
pC
Switching
c
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v2%.
c. Switching time is essentially independent of operating temperature.
V
DD
= 50 V, R
L
= 500
W
, I
D
^100
mA
V
GEN
= 10 V, R
G
= 25
W
5
20
25
30
10
40
ns
50
60
VNAS30
Turn-Off Time
www.vishay.com
11-2
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
TN3012L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
1.0
V
GS
= 10, 8 V
6V
0.8
I D – Drain Current (A)
I D – Drain Current (A)
5V
0.6
0.8
125_C
0.6
T
A
= –55_C
1.0
25_C
Transfer Characteristics
0.4
4V
0.2
3V
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
0.4
0.2
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
20
16
On-Resistance vs. Drain Current
r DS(on) – On-Resistance (
W
)
r DS(on) – On-Resistance (
W
)
16
V
GS
= 4.5 V
12
V
GS
= 10 V
12
I
D
= 0.5 A
8
I
D
= 0.1 A
8
4
4
0
0
4
8
12
16
20
V
GS
– Gate-to-Source Voltage (V)
0
0
0.2
0.4
0.6
0.8
1.0
I
D
– Drain Current (A)
On-Resistance vs. Junction Temperature
2.5
5
Threshold Voltage Variance Over Temperature
r DS(on) – On-Resistance (
W
)
(Normalized)
V GS(th) – Threshold Voltage (V)
2.0
4
1.5
3
I
D
= 1 mA
2
1.0
0.5
1
0
–50
–25
0
25
50
75
100
125
150
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
T
J
– Junction Temperature (_C)
www.vishay.com
11-3
TN3012L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance
200
10
I
D
= 0.1 A
V GS – Gate-to-Source Voltage (V)
160
C – Capacitance (pF)
8
Gate Charge
120
6
V
DS
= 150 V
4
80
C
iss
40
C
oss
C
rss
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
2
0
0
500
1000
1500
2000
2500
3000
3500
Q
g
– Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.2
T
J
= 150_C
0.1
I S – Source Current (A)
T
J
= 25_C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
V
SD
– Source-to-Drain Voltage (V)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70206
S-04279—Rev. C, 16-Jul-01
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