TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN2410L
VN2406D
VN2406L
VN2410L
VN2410LS
240
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
10 @ V
GS
= 4.5 V
6 @ V
GS
= 10 V
V
GS(th)
(V)
0.5 to 1.8
0.8 to 2
0.8 to 2
0.8 to 2
0.8 to 2
I
D
(A)
0.18
1.12
0.18
0.18
0.19
6
@ V
GS
= 10 V
10 @ V
GS
= 10 V
10 @ V
GS
= 10 V
FEATURES
D
D
D
D
D
Low On-Resistance: 3.5
W
Secondary Breakdown Free: 260 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
BENEFITS
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature “Run-Away”
APPLICATIONS
D
High-Voltage Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
’Device Marking
Front View
TO-226AA
(TO-92)
S
G
D
1
TN2410L
“S” TN
2410L
xxyy
TO-220AB
(Tab Drain)
1
’Device Marking
Front View
S
G
D
TO-92S
(Copper Lead Frame)
1
’Device Marking
Front View
2
VN2406L
“S” VN
2406L
xxyy
G
D
S
VN2406D
2
VN2406D
“S”
xxyy
3
Top View
VN2406D
“S” = Siliconix Logo
xxyy
= Date Code
2
VN2410LS
“S” VN
2410LS
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
Top View
VN2410LS
3
Top View
TN2410L
VN2406L
VN2410L
VN2410L
“S” VN
2410L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TN2410L
240
"20
0.18
0.11
1
0.8
0.32
156
VN2406D
b
240
"20
1.12
0.7
3
20
8
6.25
c
VN2406L
240
"20
0.18
0.11
1.7
0.8
0.32
156
–55 to 150
VN2410L
240
"20
0.18
0.11
1.7
0.8
0.32
156
VN2410LS
240
"20
0.19
0.12
2
0.9
0.4
139
Unit
V
A
W
_C/W
_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
c. Maximum junction-to-case
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-1
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
TN2410L
VN2406D/L
VN2410L/LS
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
= 100
mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"15
V
260
1.4
240
0.5
1.8
240
0.8
2
"100
"500
"10
240
0.8
2
"100
"500
nA
V
Gate-Body Leakage
I
GSS
T
J
= 125_C
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 192 V, V
GS
= 0 V
T
J
= 125_C
0.01
1
1
100
10
500
10
500
A
10
mA
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 120 V, V
GS
= 0 V
T
J
= 125_C
On-State Drain Current
b
V
DS
= 10 V, V
GS
= 4.5 V
I
D(on)
V
DS
= 15 V, V
GS
= 10 V
V
GS
= 2.5 V, I
D
= 0.1 A
V
GS
= 3.5 V, I
D
= 0.05 A
0.8
1.5
7.5
4.5
4
7.5
3.5
6.5
500
530
115
0.25
1
10
15
10
20
6
14.8
100
300
135
50
20
135
50
20
300
135
50
20
pF
mS
10
24.7
W
1
Drain-Source On-Resistance
b
V
GS
= 4.5 V, I
D
= 0.2 A
r
DS(on)
T
J
= 125_C
V
GS
= 10 V, I
D
= 0.5 A
T
J
= 125_C
Forward Transconductance
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, I
D
= 0.2 A
g
fs
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 10 V, I
D
= 0.5 A
30
5
Switching
c
t
ON
Turn-On Time
t
d(on)
t
r
t
OFF
Turn-Off Time
t
d(off)
t
f
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v
2%.
c. Switching time is essentially independent of operating temperature.
V
DD
= 60 V, R
L
= 150
W
I
D
^
0.4 A, V
GEN
= 10 V
R
G
= 25
W
5
3
2
26
20
6
60
23
34
23
34
VNDB24
35
8
8
8
8
ns
www.vishay.com
11-2
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0
V
GS
= 10 V
4.0 V
I
D
– Drain Current (mA)
200
Output Characteristics for Low Gate Drive
V
GS
= 3 V
2.6 V
0.8
I
D
– Drain Current (A)
160
2.4 V
120
2.2 V
80
2.0 V
40
0.6
3.5 V
0.4
3.0 V
2.5 V
0.2
2.0 V
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
1.8 V
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics
0.5
V
DS
= 15 V
0.4
T
J
= –55_C
I
D
– Drain Current (A)
0.3
25_C
125_C
10
r
DS(on)
– On-Resistance (
Ω )
12
On-Resistance vs. Gate-to-Source Voltage
8
6
1.0 A
4
I
D
= 0.1 A
2
0.5 A
0.2
0.1
0
0
1
2
3
4
5
V
GS
– Gate-Source Voltage (V)
0
0
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
GS
= 10 V
r
DS(on)
– Drain-Source On-Resistance (
Ω )
5
r
DS(on)
– Drain-Source On-Resistance (
Ω )
(Normalized)
2.25
Normalized On-Resistance
vs. Junction Temperature
V
GS
= 10 V
2.00
1.75
0.1 A
1.50
1.25
1.00
0.75
0.50
I
D
= 0.5 A
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
I
D
– Drain Current (A)
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
www.vishay.com
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
11-3
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
V
DS
= 5 V
T
J
= 150_C
I
D
– Drain Current (mA)
1
C – Capacitance (pF)
400
V
GS
= 0 V
f = 1 MHz
300
Capacitance
200
C
iss
100
0.1
25_C
C
oss
C
rss
–55_C
0.01
0.3
0.7
1.1
1.5
0
0
10
20
30
40
50
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
15.0
I
D
= 0.5 A
V
GS
– Gate-to-Source Voltage (V)
12.5
t – Switching Time (ns)
100
Load Condition Effects on Switching
V
DS
= 60 V
R
G
= 25
W
t
d(off)
t
f
10
10.0
V
DS
= 120 V
7.5
192 V
5.0
t
d(on)
2.5
t
r
0
0
400
800
1200
1600
2000
Q
g
– Total Gate Charge (pC)
1
0.01
0.1
I
D
– Drain Current (A)
1
Drive Resistance Effects on Switching
100
V
DD
= 60 V
R
L
= 150
W
I
D
= 0.4 A
t
d(off)
t – Switching Time (ns)
I
S
– Source Current (A)
1
Source-Drain Diode Forward Voltage
T
J
= 150_C
0.1
T
J
= 25_C
10
t
f
t
d(on)
t
r
1
1
2
5
10
20
50
100
R
G
– Gate Resistance (W)
0.01
0
0.5
1.0
1.5
2.0
2.5
V
SD
– Source-Drain Voltage (V)
www.vishay.com
11-4
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
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