LG Semicon Co.,Ltd.
Description
The GM76V8128CL/CLL is a 1,048,576 bits static
random access memory organized as 131,072 words
by 8 bits. Using a 0.6um advanced CMOS technology
and it provides high speed operation with minimum
cycle time of 70/85ns. The device is placed in a low
power standby mode with /CS1 high or CS2 low and
the output enable (/OE) allows fast memory access.
Thus it is suitable for high speed and low power
applications, especially where battery back-up is
required.
GM76V8128CL/CLL
131,072 WORDS x 8 BIT
CMOS STATIC RAM
Pin Configuration
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
CS2
/WE
A13
A8
A9
A11
/OE
A10
/CS1
I/O7
I/O6
I/O5
I/O4
I/O3
Features
* Fast Speed : 70/85ns
* Low Power Standby and Low Power Operation
Standby : 72uW Max. at T
A
= - 40 ~ 85C(LLE/LLI)
108uW Max. at T
A
= - 40 ~ 85C(LE/LI)
72uW Max. at T
A
= 0 ~ 70C(LL)
180uW Max. at T
A
= 0 ~ 70C(L)
Operation : 144mW (Max)
* Completely Static RAM : No Clock or Timing
Strobe Required
* Equal Access and Cycle Time
* TTL compatible inputs and outputs
* Capability of Battery Back-up Operation
* Single + 3.3V+/-0.3V Operation
* Standard 32 DIP, SOP and TSOP-I,STSOP-I
A0
* Temperature Range
A1
Commercial(0
¡-
70C) : GM76V8128C
A2
Extended (-25 ~ 85C) : GM76V8128C-E
Industrial (-40 ~ 85C) : GM76V8128C-I
(Top View)
Block Diagram
........
Address
Buffer
10
1024 MEMORY CELL ARRAY
X
1024 x 128 x 8
Decoder
(128K x 8)
Pin Description
Pin
A0-A16
/WE
/CS1, CS2
/OE
I/O0-I/O7
V
CC
V
SS
NC
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Data Inputs/Outputs
/OE
/CS1
CS2
A14
A15
A16
128 x 8
7
Y
Decorder
128
Column Select
/CS1, CS2
Chip
Control
8
/OE, /WE
Chip
Control
Power Supply (3.0V ~3.6V)
Ground
I/O Buffer
/WE
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
97
I/O7
No Connection
GM76V8128CL/CLL
Absolute Maximum Ratings*
Symbol
T
A
Parameter
GM76V8128C
Ambient Temperature under Bias
Rating
0 ~ 70
-25 ~ 85
-40 ~ 85
-55 ~ 150
260, 10 (at lead)
-0.5 ~ 4.6
-0.5 ~ V
CC
+ 0.5
-0.5 ~ V
CC
+ 0.5
0.7
Unit
C
C
C
C
C, S
V
V
V
W
GM76V8128C-E
GM76V8128C-I
T
STG
T
SOL
V
CC
V
IN
V
I/O
P
D
Storage Temperature
Soldering Temperature and Time
Supply Voltage
Input Voltage
Input and Output Voltage
Power Dissipation
*: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indi-
cated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Recommended DC Operating Conditions
(T
A
= - 40 ~ 85C)
Symbol
V
CC
V
IH
V
IL
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
2.2
-0.3*
Typ
3.3
-
-
Max
3.6
V
CC
+ 0.3
0.4
Unit
V
V
V
*Note :V
IL
(min) = -3.0V for
<=
50ns pulse
Truth Table
/CS1
L
L
L
H
X
CS2
H
H
H
X
L
/OE
L
X
H
X
X
/WE
H
L
H
X
X
A0 to A16
Stable
Stable
Stable
-
-
DATA I/O
Output Data
Input Data
Hi-Z
Hi-Z
MODE
Read
Write
Output Disable
Standby
Hi-Z
*Note: X means don't care
98
GM76V8128CL/CLL
DC Operating Characteristics
(V
CC
= 3.3V+/-0.3V, T
A
= - 40 ~ 85C)
Symbol
Parameter
Input Leakage Current
Output Leakage Current
High Level Output Voltage
Low Level Output Voltage
Operating Supply Current
Conditions
V
IN
= 0 to V
CC
/CS1 = V
IH
or CS2 = V
IL
/OE = V
IH
, V
SS
<=V
OUT
<=V
CC
I
OH
= -1.0mA
I
OL
= 2.1mA
/CS1 = V
IL
and CS2 = V
IH
V
IN
= V
IH
/V
IL,
I
OUT
= 0mA
/CS1 = V
IL
and CS2 = V
IH
V
IN
= V
IH
/V
IL
I
OUT
= 0mA
t
cycle = Min, cycle
Min *Typ
-1
-1
2.4
-
-
-
-
-
-
-
Max
1
1
-
0.4
5
Unit
uA
uA
V
V
mA
I
I(L)
I
O(L)
V
OH
V
OL
I
CC
I
CC1
-
-
40
mA
Average Operating Current
I
CC2
/CS1 = 0.2V, CS2 = V
CC
-0.2V
V
IN
= V
CC
- 0.2V/0.2V
I
OUT
= 0mA
t
cycle = 1us
Standby Current(TTL)
Standby
GM76V8128C
Current(CMOS)
GM76V8128C-E
GM76V8128C-I
/CS1 = V
IH
, CS2 = V
IL
L - Version
/CS1 = V
CC
-0.2V, LL - Version
CS2 = 0.2V
L - Version
LL - Version
-
-
5
mA
I
CCS1
I
CCS2
-
-
-
-
-
-
-
-
-
-
0.5
50
20
30
20
mA
uA
uA
*Typ. Values are measured at 25C
Capacitance
(f = 1MH
Z
, T
A
= 25C)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Output Capacitance
Test Conditions
V
I
= 0V
V
O
= 0V
Min
-
-
Max
6
8
Unit
pF
pF
*Note: This parameter is sampled and not 100% tested.
AC Operating Characteristics
Test Conditions
(V
CC
= 3.3V+/-0.3V, T
A
= - 40 ~ 85C, unless otherwise noted.)
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Value
0.4 to 2.2V
5ns
1.5V
C
L
= 100 pF + 1TTL Load
99
GM76V8128CL/CLL
AC Operating Characteristics
(V
CC
= 3.3V+/-0.3V, T
A
= - 40 ~ 85C)
Read Cycle
GM76V8128C-70
GM76V8128C-85
Symbol
Parameter
Min
Max
-
70
70
70
35
-
25
-
25
-
25
-
Min
85
-
-
-
-
10
-
10
-
0
-
10
Max
-
85
85
85
45
-
30
-
30
-
30
-
Read Cycle Time
Address Access Time
Chip Select 1 Access Time
Chip Select 2 Access Time
Output Enable Access Time
Chip Select 1 Output Setup Time
Chip Select 1 Output Floating
Chip Select 2 Output Setup Time
Chip Select 2 Output Floating
Output Enable Output Setup Time
Output Enable Output Floating
Output Hold Time
70
-
-
-
-
5
-
5
-
0
-
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
ACS1
t
ACS2
t
OE
t
CLZ1
t
CHZ1
t
CLZ2
t
CHZ2
t
OLZ
t
OHZ
t
OH
Write Cycle
Symbol
Parameter
Write Cycle Time
Chip Select Time 1
Chip Select Time 2
Address Enable Time
Address Setup Time
Write Pulse Width
Write Recovery Time
Input Data Setup Time
Input Data Hold Time
Write to Output in High-Z
Output Active from End of Write
GM76V8128C-70
GM76V8128C-85
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min
Max
-
-
-
-
-
-
-
-
-
25
-
Min
85
75
75
70
0
60
0
35
0
-
0
Max
-
-
-
-
-
-
-
-
-
30
-
t
WC
t
CW1
t
CW2
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
OW
70
65
65
60
0
50
0
30
0
-
0
100
GM76V8128CL/CLL
Timing Waveforms
Read Cycle
(Note 1)
t
RC
ADD
t
AA
t
ACS1
/CS1
t
CLZ1
t
ACS2
CS2
t
CHZ1
t
CLZ2
t
OE
t
OLZ
/OE
t
CHZ2
t
OHZ
t
OH
D
OUT
High-Z
VALID DATA
101
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